Miguel Contreras
Plumbers at Racine Way, Denver, CO

License number

Colorado 16246

Issued Date

Mar 17, 1999

Renew Date

Jun 19, 2007

Expiration Date

Mar 14, 2008

Type

Plumbing Apprentice

Address

Address 2

1102 S Racine Way APT 204, Denver, CO 80012
Denver, CO

Professional information

Senior Scientist At National Renewable Energy Laboratory

Position:

Supervisor/Senior Scientist at National Renewable Energy Laboratory

Location:

Greater Denver Area

Industry:

Renewables & Environment

Work:

National Renewable Energy Laboratory since 2005 - Supervisor/Senior Scientist National Renewable Energy Laboratory 1999 - 2005 - Senior Scientist National Renewable Energy Laboratory 1992 - 1999 - Staff Scientist Solar Energy Research Institute 1990 - 1992 - Researcher

Education:

Colorado School of Mines 1992 - 1996
Ph.D., Materials Science University of Wisconsin-Madison 1988 - 1990
MSEE, Electrical and Computer Engineering Universidad de Santiago de Chile 1978 - 1982
BSEE, Electrical Engineering

Interests:

Thin-Film PV, compound semiconductors, photonics, photovoltaics, energy, renewable energy, solar energy, energy efficiency, integration of renewable energy technologies to the power grid.

Honor & Awards:

-Winner of the 1993 “Best of What’s New” award from Popular Science Magazine for record thin-film solar cell performance. -Most cited physicist in 2001. Ranked 7th in the Top ten list of most cited scientific works by “Science Watch” http://archive.sciencewatch.com/ana/fea/08novdecFea/ -Nominated as a “Fellow” of the 2006 World Technolgy Network for contributions to the filed of solar energy http://www.wtn.net/2006/summit/shortlisted.html -Winner of the HENAAC 2008 Outstanding Technical Achievement award for contributions to the field of solar energy and renewable energy technologies. http://www.greatmindsinstem.org/henaac/awards/awardwinners.php?year=2008 -Ranked at the top 10 most cited authors and author of the most cited paper in Energy and Fuels for the1999-2008 decade. http://archive.sciencewatch.com/ana/fea/08novdecFea/

Languages:

Spanish

Preparation Of Cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) Precursor Films By Electrodeposition For Fabricating High Efficiency Solar Cells

US Patent:

5730852, Mar 24, 1998

Filed:

Dec 12, 1995

Appl. No.:

8/571150

Inventors:

Raghu N. Bhattacharya - Littleton CO
Miguel A. Contreras - Golden CO
James Keane - Lakewood CO
Andrew L. Tennant - Denver CO
John R. Tuttle - Denver CO
Kannan Ramanathan - Lakewood CO
Rommel Noufi - Golden CO

Assignee:

Davis, Joseph & Negley - Austin TX

International Classification:

H01L 3118, C23C 2802

US Classification:

205192

Abstract:

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se. sub. 2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Method Of Fabricating High-Efficiency Cu(In,Ga)(Ses).Sub.2 Thin Films For Solar Cells

US Patent:

5441897, Aug 15, 1995

Filed:

Feb 16, 1994

Appl. No.:

8/197204

Inventors:

Rommel Noufi - Golden CO
Andrew M. Gabor - Boulder CO
John R. Tuttle - Denver CO
Andrew L. Tennant - Denver CO
Miguel A. Contreras - Golden CO
David S. Albin - Denver CO
Jeffrey J. Carapella - Evergreen CO

Assignee:

Midwest Research Institute - Kansas City MO

International Classification:

H01L 3118

US Classification:

437 5

Abstract:

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S). sub. 2 comprises depositing a first layer of (In,Ga). sub. x (Se,S). sub. y followed by depositing just enough Cu+(Se,S) or Cu. sub. x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga). sub. x (Se,S). sub. y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu. sub. x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga). sub. x (Se,S). sub. y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga). sub. x (Se,S). sub. y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu. sub. x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga). sub. x (Se,S). sub.

Recrystallization Method To Selenization Of Thin-Film Cu(In,Ga)Se.sub.2 For Semiconductor Device Applications

US Patent:

5436204, Jul 25, 1995

Filed:

Aug 22, 1994

Appl. No.:

8/293826

Inventors:

David S. Albin - Denver CO
Jeffrey J. Carapella - Evergreen CO
John R. Tuttle - Denver CO
Miguel A. Contreras - Golden CO
Andrew M. Gabor - Boulder CO
Rommel Noufi - Golden CO
Andrew L. Tennant - Denver CO

Assignee:

Midwest Research Institute - Kansas City MO

International Classification:

H01L 21302

US Classification:

437225

Abstract:

A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se. sub. 2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se. sub. 2 :Cu. sub. x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se. sub. 2 :Cu. sub. x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se. sub. 2 :Cu. sub. x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550. degree. C. ) at which Cu(In,Ga)Se. sub. 2 is solid and Cu. sub. x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu. sub. x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu. sub. x (In,Ga). sub. y Se. sub. z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se. sub. 2 :Cu. sub.

Enhanced Quality Thin Film Cu(In,Ga)Se.sub.2 For Semiconductor Device Applications By Vapor-Phase Recrystallization

US Patent:

5356839, Oct 18, 1994

Filed:

Apr 12, 1993

Appl. No.:

8/045860

Inventors:

John R. Tuttle - Denver CO
Miguel A. Contreras - Golden CO
Rommel Noufi - Golden CO
David S. Albin - Denver CO

Assignee:

Midwest Research Institute - Kansas City MO

International Classification:

H01L 21302

US Classification:

437225

Abstract:

Enhanced quality thin films of Cu. sub. w (In,Ga. sub. y)Se. sub. z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu. sub. x Se on a substrate to form a large-grain precursor and then converting the excess Cu. sub. x Se to Cu(In,Ga)Se. sub. 2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga). sub. y Se. sub. z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300. degree. -600. degree. C. , where the Cu(In,Ga)Se. sub. 2 remains solid, while the excess Cu. sub.