MICHAEL WOOD
Social Work at Viewridge Ave, San Diego, CA

License number

California PSY26948

Personal information

See more information about MICHAEL WOOD at radaris.com

Name

Address

Phone

Michael Van Wood

Po Box 331213, Pacoima, CA 91333

Michael Van Wood, age 60

Po Box 3313, Ontario, CA 91761

(310) 291-7702

Michael Van Wood

Po Box 3207, Tustin, CA 92781

(714) 389-0967

Michael Van Wood

Po Box 3, Lake Elsinore, CA 92531

Michael Van Wood

Po Box 4492, Crestline, CA 92325

(909) 844-7401

Professional information

Senior Operations Analyst At Espial Services

Position:

Senior Operations Analyst at Espial Services

Location:

Panama City, Florida Area

Industry:

Defense & Space

Work:

Espial Services since Oct 2010 - Senior Operations Analyst Naval Special Warfare Group THREE 2004 - 2009 - NSWG-3 Maritime ISR USDS - Overseas 2003 - 2004 - Force Protection Response Group Contractor Commander Naval Special Warfare Command - Coronado, CA 1999 - 2003 - Operations Officer, Assistant Operations Officer, and Informations Operations Officer Commander Pacific Fleet - Pearl Harbor, HI 1995 - 1997 - Naval Special Warfare Officer and Strategic Military Deception Planning Officer SEAL Delivery Vehicle Team ONE 1986 - 1995 - DET OIC, OPS O, SDV & DDS PLT CDR

Education:

Syracuse Univiversity, Newhouse School of Communications 1976 - 1997
Military Photojournalism Certification, Photojournalism Southern Illinois University, Carbondale 1975 - 1976
Bachelor of Science (BS), Occupational Education

Interests:

Soon to retire. Starting 2014, I will be interested in serving as a consultant on any of my listed experiences and occupations. Non-work interests include Scuba Diving, Nature Photograhy and Underwater Photography.

Associate Director, Business Development At Atyr Pharma

Position:

Associate Director, Business Development at aTyr Pharma

Location:

Greater San Diego Area

Industry:

Biotechnology

Work:

aTyr Pharma since 2011 - Associate Director, Business Development Orexigen Therapeutics 2009 - 2010 - Marketing & Business Development Abbott Laboratories 2004 - 2009 - Sales, Marketing & Business Development Tenet Healthcare 2002 - 2004 - Management Consulting Morgan Stanley 2000 - 2001 - Investment Banking University of California, San Francisco 1997 - 1999 - Neurosurgery Research University of California, Berkeley 1996 - 1997 - Molecular Biology Research (HHMI Fellow) Salk Institute 1996 - 1996 - Genetics Research Salk Institute 1994 - 1995 - Human Genome Project Research

Education:

University of California, Berkeley
B.S., Molecular & Cell Biology University of Chicago - Booth School of Business
M.B.A., Finance, Strategy & Entrepreneurship

Skills:

Business Development, Sales, Management Consulting, Research, Adaptability, Biotechnology, Business Analysis, Business Formation, Business Innovation, Business Networking, Commercial Development, Commercialization, Collaboration, Contract Negotiation, Contractual Agreements, Corporate Development, Creative Strategy, Cross-functional Team Leadership, Deal Structuring, Deal Execution, Drafting Agreements, Due Diligence, Early-stage Startups, Executive Management, Fast Learner, Financial Analysis, Financial Modeling, Forecasting, In-licensing, Investment Banking, Intellectual Property Valuation, Legal Documents, Marketing, Market Analysis, Market Research, Molecular Biology, Molecular Diagnostics, Out-licensing, Outstanding interpersonal communication skills, Pharmaceuticals, Product Development, Result Oriented, Strategic Alliances, Strategic Consulting, Strategic Planning, Strategic Sourcing, Team Building, Teamwork, Technology Transfer, Venture Capital

Languages:

Spanish

Michael Wood

Location:

Greater San Diego Area

Industry:

Military

Mesfets Integrated With Mosfets On Common Substrate And Methods Of Forming The Same

US Patent:

7589007, Sep 15, 2009

Filed:

Apr 22, 2005

Appl. No.:

11/112061

Inventors:

Trevor J. Thornton - Fountain Hills AZ, US
Michael E. Wood - San Diego CA, US

Assignee:

Arizona Board of Regents for and on Behalf of Arizona State University - Scottsdale AZ

International Classification:

H01L 21/44

US Classification:

438597, 438655, 438664

Abstract:

An integrated circuit has first and second complementary MOSFETs and first and second complementary MESFETs fabricated on a common substrate. An insulating layer is disposed on the common substrate. The active region uses salicide block oxide layers to align the drain and source regions to the gate. Alternatively, the active region uses poly-silicon separators surrounded by side wall oxide spacers to align the drain and source regions to the gate. The MESFET may have a drift region between the gate terminal and drain region for high voltage applications. A “T”-shaped metal contact to the gate of the MESFETs reduces the gate length of the device.

Method For Fabricating Complementary Enhancement And Depletion Mode Field Effect Transistors On A Single Substrate

US Patent:

5300443, Apr 5, 1994

Filed:

Jun 30, 1993

Appl. No.:

8/094541

Inventors:

Randy L. Shimabukuro - San Diego CA
Michael E. Wood - San Diego CA
Oswald I. Csanadi - San Diego CA

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 21265

US Classification:

437 34

Abstract:

A method for fabricating complementary enhancement and depletion mode field ffect transistors on a single substrate comprises the steps of: a) patterning a structure of a layer of silicon formed on an insulating substrate to form first, second, third, and fourth silicon islands; b) doping the second island with a p-type dopant; c) doping the third island with a p-type dopant; d) doping the fourth island with an n-type dopant; e) forming a first electrically insulating gate layer on the third and fourth islands; f) forming a second electrically insulating gate on the first and second islands; g) forming an electrically conductive gate over the first and second electrically insulating gate layers; h) doping the second island with an n-type dopant; i) doping the fourth island with an n-type dopant; j) doping the first and third islands with a p-type dopant; and k) doping the first and third islands with a p-type dopant to transform the first island into a p-type enhancement mode field effect transistor, the second island into a n-type enhancement mode field effect transistor, the third island into a p-type depletion mode field effect transistor, and the fourth island into an n-type depletion mode field effect transistor.