Inventors:
Rode Mora - Austin TX, US
Vance Adams - Austin TX, US
Venkat Kolagunta - Austin TX, US
Michael Turner - San Antonio TX, US
Toni Van Gompel - Austin TX, US
Assignee:
Freescale Semiconductor, Inc. - Austin TX
International Classification:
H01L 21/336, H01L 27/12
Abstract:
An electronic device can include a substrate, an insulating layer, and a semiconductor layer overlying the insulating layer, wherein the insulating layer lies between the substrate and the semiconductor layer. In one aspect, a process of forming the electronic device can include patterning the semiconductor layer to define an opening extending to the insulating layer. The semiconductor layer has a sidewall and a surface, the surface is spaced apart from the insulating layer, and the sidewall extends from the surface towards the insulating layer. The process can also include forming a sidewall spacer adjacent to the sidewall, wherein the sidewall spacer lies within the opening and adjacent to the sidewall, and is spaced apart from the surface. In another aspect, the electronic device can include a field isolation region including the sidewall spacer.