MICHAEL TERRY MOORE
Pilots at 2 St, Corning, NY
License number
New York A2471107
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
381 E 2Nd St, Corning, NY 14830
Professional information
Light-Weight Hybrid Glass Laminates
US Patent:
2013029, Nov 7, 2013
Filed:
Jul 9, 2013
Appl. No.:
13/937707
Inventors:
Timothy Scott Huten - Big Flats NY, US
Michael John Moore - Corning NY, US
Michael John Moore - Corning NY, US
International Classification:
B32B 17/10
US Classification:
428215
Abstract:
A glass laminate comprises an external glass sheet, an internal glass sheet, and a polymer interlayer formed between the external glass sheet and the internal glass sheet. The external glass sheet can be a thin chemically-strengthened glass sheet or can be a non-chemically strengthened glass sheet, the polymer interlayer can have a thickness of less than 1.6 mm, and the internal glass sheet can be a non-chemically-strengthened glass sheet or a thin chemically strengthened glass sheet.
Methods And Apparatus For Producing Semiconductor On Insulator Structures Using Directed Exfoliation
US Patent:
8003491, Aug 23, 2011
Filed:
Oct 30, 2008
Appl. No.:
12/290384
Inventors:
Sarko Cherekdjian - Campbell CA, US
Jeffrey Scott Cites - Horseheads NY, US
James Gregory Couillard - Ithaca NY, US
Richard Orr Maschmeyer - Corning NY, US
Michael John Moore - Corning NY, US
Alex Usenko - Painted Post NY, US
Jeffrey Scott Cites - Horseheads NY, US
James Gregory Couillard - Ithaca NY, US
Richard Orr Maschmeyer - Corning NY, US
Michael John Moore - Corning NY, US
Alex Usenko - Painted Post NY, US
Assignee:
Corning Incorporated - Corning NY
International Classification:
H01L 21/46
US Classification:
438458, 438423, 438455, 438473, 257E21561, 257E21568, 257E2157
Abstract:
Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.
Methods And Apparatus For Producing Semiconductor On Insulator Structures Using Directed Exfoliation
US Patent:
8338269, Dec 25, 2012
Filed:
Oct 5, 2011
Appl. No.:
13/253451
Inventors:
Sarko Cherekdjian - Campbell CA, US
Jeffrey Scott Cites - Horseheads NY, US
James Gregory Couillard - Ithaca NY, US
Richard Orr Maschmeyer - Corning NY, US
Michael John Moore - Corning NY, US
Alex Usenko - Painted Post NY, US
Jeffrey Scott Cites - Horseheads NY, US
James Gregory Couillard - Ithaca NY, US
Richard Orr Maschmeyer - Corning NY, US
Michael John Moore - Corning NY, US
Alex Usenko - Painted Post NY, US
Assignee:
Corning Incorporated - Corning NY
International Classification:
H01L 21/30
US Classification:
438458, 438473, 257E21317
Abstract:
Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.
Methods And Apparatus For Producing Semiconductor On Insulator Structures Using Directed Exfoliation
US Patent:
7816225, Oct 19, 2010
Filed:
Oct 30, 2008
Appl. No.:
12/290362
Inventors:
Sarko Cherekdjian - Campbell CA, US
Jeffrey Scott Cites - Horseheads NY, US
James Gregory Couillard - Ithaca NY, US
Richard Orr Maschmeyer - Corning NY, US
Michael John Moore - Corning NY, US
Alex Usenko - Painted Post NY, US
Jeffrey Scott Cites - Horseheads NY, US
James Gregory Couillard - Ithaca NY, US
Richard Orr Maschmeyer - Corning NY, US
Michael John Moore - Corning NY, US
Alex Usenko - Painted Post NY, US
Assignee:
Corning Incorporated - Corning NY
International Classification:
H01L 21/00
US Classification:
438423, 438406, 438455, 438514, 257E21317, 257E2132, 257E21561
Abstract:
Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X-and Y-axial directions.
Material Sheet Handling System And Processing Methods
US Patent:
8528886, Sep 10, 2013
Filed:
Feb 2, 2009
Appl. No.:
12/364183
Inventors:
Chester Hann Huei Chang - Painted Post NY, US
Michael John Moore - Corning NY, US
Michael Yoshiya Nishimoto - Painted Post NY, US
Chunhe Zhang - Horseheads NY, US
Michael John Moore - Corning NY, US
Michael Yoshiya Nishimoto - Painted Post NY, US
Chunhe Zhang - Horseheads NY, US
Assignee:
Corning Incorporated - Corning NY
International Classification:
B23Q 3/00, B25B 1/00, B25B 11/00, B65G 25/00, H01L 21/302, B24B 49/00
US Classification:
269 20, 269 21, 438745, 451 8, 451 11, 414160
Abstract:
Methods and apparatus provide for delivering a controlled supply of gas to at least one aero-mechanical device to impart a gas flow to suspend a material sheet; preventing lateral movement of the material sheet in at least one direction when suspended; and imparting a stream of water, from a side of the material sheet opposite the at least one aero-mechanical device, to cut the material sheet when suspended.
Semiconductor On Glass Insulator Made Using Improved Thinning Process
US Patent:
7790565, Sep 7, 2010
Filed:
Mar 29, 2007
Appl. No.:
11/729895
Inventors:
Kishor Purushottam Gadkaree - Big Flats NY, US
Michael John Moore - Corning NY, US
Mark Andrew Stocker - Painted Post NY, US
Jiangwei Feng - Painted Post NY, US
Joseph Frank Mach - Lindley NY, US
Michael John Moore - Corning NY, US
Mark Andrew Stocker - Painted Post NY, US
Jiangwei Feng - Painted Post NY, US
Joseph Frank Mach - Lindley NY, US
Assignee:
Corning Incorporated - Corning NY
International Classification:
H01L 21/76
US Classification:
438407, 257347, 257E2148, 257E21561, 257E2157, 438455
Abstract:
Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.
Methods And Apparatus For Forming A Slurry Polishing Pad
US Patent:
8500934, Aug 6, 2013
Filed:
Mar 15, 2011
Appl. No.:
13/048399
Inventors:
Raymond Charles Cady - Horseheads NY, US
Michael John Moore - Corning NY, US
Mark Alex Shalkey - Corning NY, US
Mark Andrew Stocker - Market Harborough, GB
Michael John Moore - Corning NY, US
Mark Alex Shalkey - Corning NY, US
Mark Andrew Stocker - Market Harborough, GB
Assignee:
Corning Incorporated - Corning NY
International Classification:
B24B 7/00
US Classification:
156214, 451540
Abstract:
Methods and apparatus for forming a semi-spherical polishing pad for polishing semiconductor surfaces, provide for: placing a polishing pad pre-form on a dome-shaped forming surface, the polishing pad pre-form including a circular body having a center and an outer peripheral edge, and a plurality of slots extending from the outer peripheral edge towards the center; disposing a bladder opposite to the dome-shaped forming surface and the polishing pad pre-form; inflating the bladder with a fluid such that the dome-shaped forming surface of the bonnet form presses against the polishing pad pre-form from one side and the bladder presses against the polishing pad pre-form from an opposite side; and maintaining the pressing step for a predetermined period of time to achieve the semi-spherical polishing pad.
Chemically-Strengthened Glass Laminates
US Patent:
2012009, Apr 19, 2012
Filed:
Sep 28, 2011
Appl. No.:
13/247215
Inventors:
William Keith Fisher - Suffield CT, US
Michael John Moore - Corning NY, US
Steven S. Rosenblum - Ithaca NY, US
Zhiqiang Shi - Painted Post NY, US
John Christopher Thomas - Elmira NY, US
Michael John Moore - Corning NY, US
Steven S. Rosenblum - Ithaca NY, US
Zhiqiang Shi - Painted Post NY, US
John Christopher Thomas - Elmira NY, US
International Classification:
B32B 3/00, B32B 7/02
US Classification:
428174, 428337, 428215
Abstract:
A glass laminate includes at least one chemically-strengthened glass sheet and a polymer interlayer formed over a surface of the sheet. The chemically-strengthened glass sheet has a thickness of less than 2.0 mm, and a near-surface region under a compressive stress. The near surface region extends from a surface of the glass sheet to a depth of layer (in micrometers) of at least 65-0.06(CS), where CS is the compressive stress at the surface of the chemically-strengthened glass sheet and CS>300 MPa.
Apparatus For Forming A Slurry Polishing Pad
US Patent:
7927092, Apr 19, 2011
Filed:
Dec 31, 2007
Appl. No.:
11/967818
Inventors:
Raymond Charles Cady - Horseheads NY, US
Michael John Moore - Corning NY, US
Mark Alex Shalkey - Corning NY, US
Mark Andrew Stocker - Market Harborough, GB
Michael John Moore - Corning NY, US
Mark Alex Shalkey - Corning NY, US
Mark Andrew Stocker - Market Harborough, GB
Assignee:
Corning Incorporated - Corning NY
International Classification:
B29C 43/36
US Classification:
425389, 100211, 425398, 4254052, 425423, 451548
Abstract:
Methods and apparatus for forming a semi-spherical polishing pad for polishing semiconductor surfaces, provide for: placing a polishing pad pre-form on a dome-shaped forming surface, the polishing pad pre-form including a circular body having a center and an outer peripheral edge, and a plurality of slots extending from the outer peripheral edge towards the center; disposing a bladder opposite to the dome-shaped forming surface and the polishing pad pre-form; inflating the bladder with a fluid such that the dome-shaped forming surface of the bonnet form presses against the polishing pad pre-form from one side and the bladder presses against the polishing pad pre-form from an opposite side; and maintaining the pressing step for a predetermined period of time to achieve the semi-spherical polishing pad.
Methods And Apparatus For Producing Semiconductor On Insulator Structures Using Directed Exfoliation
US Patent:
8058148, Nov 15, 2011
Filed:
May 13, 2010
Appl. No.:
12/779606
Inventors:
Sarko Cherekdjian - Campbell CA, US
Jeffrey Scott Cites - Horseheads NY, US
James Gregory Couillard - Ithaca NY, US
Richard Orr Maschmeyer - Corning NY, US
Michael John Moore - Corning NY, US
Alex Usenko - Painted Post NY, US
Jeffrey Scott Cites - Horseheads NY, US
James Gregory Couillard - Ithaca NY, US
Richard Orr Maschmeyer - Corning NY, US
Michael John Moore - Corning NY, US
Alex Usenko - Painted Post NY, US
Assignee:
Corning Incorporated - Corning NY
International Classification:
H01L 21/30
US Classification:
438458, 438423, 438455, 438473, 257E21317, 257E2132, 257E21561
Abstract:
Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.