MICHAEL STUART GORDON
Pilots at Hanover St, Yorktown Hgts, NY

7498588, Mar 3, 2009

May 7, 2008

12/116935

Michael S. Gordon - Yorktown Heights NY, US
Carl Emil Bohnenkamp - Hopewell Junction NY, US

International Business Machines Corporation - Armonk NY

H05H 11/00

250424, 2504921, 2504923, 25049221, 250423 R, 376108, 376111, 376114, 315500, 315506, 31511181, 3133591

A method of producing an ion beam in a tandem accelerator, the method includes the acts of insulating, in a cavity containing an insulating gas under pressure, a beam tube having first and second ends and a terminal situated between the first and second ends; seating, using a load lock valve, the insulating gas under pressure; generating an operating voltage using a first voltage source situated outside the cavity when the operating voltage is less than or equal to a threshold value; generating the operating voltage using a second voltage source situated inside the cavity when the operating voltage is greater than the threshold value; coupling the terminal to the first or second voltage sources; generating, using a particle source, an ion beam; and accelerating the ion beam in a first and second parts of the beam tube.

7781871, Aug 24, 2010

Jun 12, 2009

12/483364

Cyril Cabral, Jr. - Yorktown Heights NY, US
Michael S. Gordon - Yorktown Heights NY, US
Kenneth P. Rodbell - Yorktown Heights NY, US

International Business Machines Corporation - Armonk NY

H01L 23/552

257660, 438555, 438614

A structure for reduction of soft error rates in integrated circuits. The structure including: a semiconductor substrate; and a stack of one or more wiring levels stacked from a lowermost wiring level to an uppermost wiring level, the lowermost wiring level nearer the semiconductor substrate than the uppermost wiring level; and an alpha particle blocking layer on a top surface of the uppermost wiring level of the one or more wiring levels, the blocking layer comprising metal wires and a dielectric material, the blocking layer having a combination of a thickness of the blocking layer and a volume percent of metal wires in the blocking layer sufficient to stop a predetermined percentage of alpha particles of a selected energy or less striking the blocking layer from penetrating into the stack of one or more wiring levels or the substrate.

7491948, Feb 17, 2009

Jan 30, 2006

11/342429

Michael S. Gordon - Yorktown Heights NY, US
Kenneth P. Rodbell - Sandy Hook CT, US
Robert L. Wisnieff - Ridgefield CT, US

International Business Machines Corporation - Armonk NY

G01T 3/00

2504721, 25037001, 25039001, 438 56, 365205

A method of detecting and transmitting radiation detection information to a network. The method including: communicating with one or more personal radiation detection devices, each device including, a host memory, an event memory, a microprocessor, a global positioning unit and a transceiver or a transmitter; a radiation shield around the host memory and the event memory; a radiation detection memory, the radiation detection memory, responsive to alpha radiation and including two or more SRAM arrays including cross-coupled invertors coupled to wordlines through different value capacitors; a conversion device including a material able to convert neutron and/or gamma radiation into alpha radiation; and an event detection circuit configured to detect and to store data relative to detection of the alpha radiation events by the radiation detection memory; storing the data in the event memory; and retrieving, in a reading device of the network, the data stored in the event memory.

7238547, Jul 3, 2007

Apr 4, 2005

11/098343

Janes Jones, legal representative - Yorktown Heights NY, US
Jerry D. Ackaret - Beaverton OR, US
Michael A. Gaynes - Vestal NY, US
Michael S. Gordon - Yorktown Heights NY, US
Nancy C. LaBianca - Yalesville CT, US

International Business Machines Corporation - Armonk NY

H01L 21/56

438108, 438 17, 438123, 438124, 438127, 257E23117

An IC device is packaged for accelerated transient particle emission by doping the underfill thereof with a transient-particle-emitting material having a predetermined, substantially constant emission rate. The emission rate may be tunable. In one aspect, a radioactive adhesive composition is provided for bonding a semiconductor device to a chip carrier. The radioactive adhesive composition is made from a cured reaction product including a resin and a filler, and may be reworkable or non-reworkable. Either the resin or the filler, individually or both together as a mix, are doped substantially uniformly with the transient-particle-emitting material, thereby putting the transient-particle-emitting in close proximity with the IC to be tested. The underfill is formulated to have a stable chemistry, and the doped particles are encapsulated, so as to contain the emissions. Accelerated transient-particle-emission testing may then be performed on the IC in situ to provide accelerated detection of soft errors.

8212218, Jul 3, 2012

Nov 30, 2009

12/627076

Cyril Cabral, Jr. - Yorktown Heights NY, US
Michael S. Gordon - Yorktown Heights NY, US
Steven J. Koester - Yorktown Heights NY, US
Conal E. Murray - Yorktown Heights NY, US
Kenneth P. Rodbell - Yorktown Heights NY, US
Stephen M. Rossnagel - Yorktown Heights NY, US
Robert L. Wisnieff - Yorktown Heights NY, US
Jeng-bang Yau - Yorktown Heights NY, US

International Business Machines Corporation - Armonk NY

G01T 1/02

25037007, 250391, 25039003, 250371

A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency.

2009003, Feb 12, 2009

Aug 8, 2007

11/835475

Cyril Cabral, JR. - Mahopac NY, US
Michael S. Gordon - Yorktown Heights NY, US
Cristina Plettner - Koln, DE
Kenneth Parker Rodbell - Sandy Hook CT, US

G01T 1/24

250366, 25037002

A method and detector for detecting particle emissions from a test sample includes positioning a detector over the test sample, wherein the detector includes a plurality of detection units, wherein each detection unit includes a first silicon detector and a barrier layer removably disposed over the first silicon detector. The method includes generating a first current signal in the silicon detector in response to receiving a first particle emitted from an atom of the test sample by the silicon detector of the first detection unit, and responsive to a recoiling daughter nuclide of the atom striking the barrier layer of the first detection unit, the recoiling daughter nuclide resulting from emission of the first particle from the atom, absorbing the recoiling daughter nuclide by the barrier layer of the first detection unit.

7649257, Jan 19, 2010

Mar 20, 2008

12/051881

Michael S. Gordon - Yorktown Heights NY, US
Nancy C. LaBianca - Yalesville CT, US
Kenneth P. Rodbell - Sandy Hook CT, US

International Business Machines Corporation - Armonk NY

H01L 23/48

257737, 257E21508, 438 15, 438613

An integrated circuit and methods of forming and using the integrated circuit. The circuit includes: a radiation-emitting layer over a selected region of a top surface of an integrated circuit chip, the radiation emitting layer comprising a first polymer or resin and a first radioactive material, the region smaller than a whole of the top surface of the integrated circuit chip, the region including a circuit that is liable to temporary failure when struck by radiation generated by the first radioactive material.

8288177, Oct 16, 2012

Aug 17, 2010

12/857864

Michael Gaynes - Vestal NY, US
Michael S. Gordon - Yorktown Heights NY, US
Nancy C. LaBianca - Carmel CT, US
Kenneth F. Latzko - Carmel NY, US
Aparna Prabhakar - North White Plains NY, US

International Business Machines Corporation - Armonk NY

G01R 31/26, G01R 31/00, H01L 21/00, H01L 21/44, H01L 23/58, H01L 23/552

438 17, 438 26, 438108, 438613, 257 48, 257660, 257737, 257778, 257E21503, 257E21529, 257E23021, 257E23115, 324501, 32476202

A method for detecting soft errors in an integrated circuit (IC) due to transient-particle emission, the IC comprising at least one chip and a substrate includes mixing an epoxy with a radioactive source to form a hot underfill (HUF); underfilling the chip with the HUF; sealing the underfilled chip; measuring a radioactivity of the HUF at an edge of the chip; measuring the radioactivity of the HUF on a test coupon; testing the IC for soft errors by determining a current radioactivity of the HUF at the time of testing based on the measured radioactivity; and after the expiration of a radioactive decay period of the radioactive source, using the IC in a computing device by a user.

8158449, Apr 17, 2012

Oct 8, 2008

12/247474

Cyril Cabral, Jr. - Mahopac NY, US
Michael S. Gordon - Yorktown Heights NY, US
Jeff McMurray - Layton UT, US
Cristina Plettner - Cologne, DE
Paul Andrew Ronsheim - Hopewell Junction NY, US

International Business Machines Corporation - Armonk NY

H01L 21/00

438 56, 438 10, 438 17, 257E31086, 257E31119

A structure and a method for operating the same. The method includes providing a detecting structure which includes N detectors. N is a positive integer. A fabrication step is simultaneously performed on the detecting structure and M product structures in a fabrication tool resulting in a particle-emitting layer on the detecting structure. The detecting structure is different than the M product structures. The M product structures are identical. M is a positive integer. An impact of emitting particles from the particle-emitting layer on the detecting structure is analyzed after said performing is performed.

7939823, May 10, 2011

Sep 10, 2007

11/852353

Michael S. Gordon - Yorktown Heights NY, US
Kenneth P. Rodbell - Sandy Hook CT, US
Henry H. K. Tang - Poughkeepsie NY, US

International Business Machines Corporation - Armonk NY

H01L 23/58, H01L 21/00

257 48, 257E23002, 257E21522, 257E21529

An integrated circuit, method of forming the integrated circuit and a method of testing the integrated circuit for soft-error fails. The integrated circuit includes: a silicon substrate; a dielectric layer formed over the substrate; electrically conductive wires formed in the dielectric layer, the wires interconnecting semiconductor devices formed in the substrate into circuits; and an alpha particle emitting region in the integrated circuit chip proximate to one or more of the semiconductor devices. The method includes exposing the integrated circuit to an artificial flux of thermal neutrons to cause fission of atoms in the alpha particle emitting region into alpha particles and other atoms.