MICHAEL SANTIAGO COX
Pilots at Church St, Gilroy, CA
License number
California A4144404
Issued Date
Sep 2016
Expiration Date
Sep 2018
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
7090 Church St, Gilroy, CA 95020
Professional information
Method And Apparatus For Gas Distribution And Plasma Application In A Linear Deposition Chamber
US Patent:
2013005, Mar 7, 2013
Filed:
Sep 6, 2012
Appl. No.:
13/605449
Inventors:
HEMANT P. MUNGEKAR - Campbell CA, US
Alexander S. Polyak - San Jose CA, US
Michael S. Cox - Gilroy CA, US
Alexander S. Polyak - San Jose CA, US
Michael S. Cox - Gilroy CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/513, H05H 1/24
US Classification:
427569, 118723 R
Abstract:
A method and apparatus for processing a substrate is described. One embodiment of the invention provides an apparatus for forming thin films. The apparatus comprises a chamber defining an internal volume, a plasma source disposed within the internal volume, and at least one gas injection source disposed adjacent the plasma source within the internal volume, wherein the at least one gas injection source comprises a first channel and a second channel for delivering gases to the internal volume, the first channel delivering a gas at a first pressure or a first density and the second channel delivering a gas at a second pressure or a second density, the first pressure or the first density being different than the second pressure or the second density.
Method For Balancing Gas Flow Supplying Multiple Cvd Reactors
US Patent:
2013010, May 2, 2013
Filed:
Oct 8, 2012
Appl. No.:
13/647160
Inventors:
JEONGHOON OH - San Jose CA, US
Michael S. Cox - Gilroy CA, US
Alexander S. Polyak - San Jose CA, US
Michael S. Cox - Gilroy CA, US
Alexander S. Polyak - San Jose CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
F16K 11/00
US Classification:
137 2, 137861
Abstract:
Gas supply systems and methods are disclosed for solar cell production using multiple parallel reactors. A first gas supply control system has a gas panel having a plurality of gas outlet lines, supplying a first main supply line having a main line mass flow meter measuring the combined total gas mass flow rate in the first main supply line. First, second and third branch lines supplied by the first main supply line each branch line having mass flow controller and one or more control loops established between the mass flow meter and the branch line mass flow controllers. The control loop determining a set point for each of the branch mass flow controllers based on dividing the flow rate of the total gas flow by the number of reactors in use. In addition, a second gas supply control system may be coupled to the first gas supply control system to avoid mixing certain gases before they enter the respective reactors to which they are supplied.
Apparatus For Physical Vapor Deposition Having Centrally Fed Rf Energy
US Patent:
2011024, Oct 6, 2011
Filed:
Mar 15, 2011
Appl. No.:
13/048440
Inventors:
MUHAMMAD RASHEED - San Jose CA, US
LARA HAWRYLCHAK - Gilroy CA, US
MICHAEL S. COX - Gilroy CA, US
DONNY YOUNG - San Jose CA, US
KIRANKUMAR SAVANDAIAH - Bangalore, IN
ALAN RITCHIE - Menlo Park CA, US
LARA HAWRYLCHAK - Gilroy CA, US
MICHAEL S. COX - Gilroy CA, US
DONNY YOUNG - San Jose CA, US
KIRANKUMAR SAVANDAIAH - Bangalore, IN
ALAN RITCHIE - Menlo Park CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23C 14/34
US Classification:
20429806, 20429808
Abstract:
In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.
Static Deposition Profile Modulation For Linear Plasma Source
US Patent:
2013027, Oct 17, 2013
Filed:
Apr 13, 2012
Appl. No.:
13/447035
Inventors:
Manoj Vellaikal - Sunnyvale CA, US
Michael S. Cox - Gilroy CA, US
Hemant P. Mungekar - Campbell CA, US
Chikuang C. Wang - San Jose CA, US
Lin Zhang - San Jose CA, US
Hari K. Ponnekanti - San Jose CA, US
Michael P. Stewart - San Francisco CA, US
Alexander S. Polyak - San Jose CA, US
Michael S. Cox - Gilroy CA, US
Hemant P. Mungekar - Campbell CA, US
Chikuang C. Wang - San Jose CA, US
Lin Zhang - San Jose CA, US
Hari K. Ponnekanti - San Jose CA, US
Michael P. Stewart - San Francisco CA, US
Alexander S. Polyak - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/50
US Classification:
427569, 118723 R
Abstract:
Methods and apparatus for controlling film deposition using a linear plasma source are described herein. The apparatus include a showerhead having openings therein for flowing a gas therethrough, a conveyor to support one or more substrates thereon disposed adjacent to the showerhead, and a power source for ionizing the gas. The ionized gas can be a source gas used to deposit a material on the substrate. The deposition profile of the material on the substrate can be adjusted, for example, using a gas-shaping device included in the apparatus. Additionally or alternatively, the deposition profile may be adjusted by using an actuatable showerhead. The method includes exposing a substrate to an ionized gas to deposit a film on the substrate, wherein the ionized gas is influenced with a gas-shaping device to uniformly deposit the film on the substrate as the substrate is conveyed proximate to the showerhead.
Advanced Platform For Passivating Crystalline Silicon Solar Cells
US Patent:
2013017, Jul 4, 2013
Filed:
Jan 2, 2013
Appl. No.:
13/732662
Inventors:
HARI K. PONNEKANTI - San Jose CA, US
Alexander S. Polyak - San Jose CA, US
James L'Heureux - Santa Clara CA, US
Michael S. Cox - Gilroy CA, US
Christopher T. Lane - Los Gatos CA, US
Hemant P. Mungekar - Campbell CA, US
Susanne Schlaefer - Aschaffenburg, DE
Wolfgang Buschbeck - Hanau, DE
Juergen Henrich - Limeshain, DE
Andreas Lopp - Freigericht-Somborn, DE
Alexander S. Polyak - San Jose CA, US
James L'Heureux - Santa Clara CA, US
Michael S. Cox - Gilroy CA, US
Christopher T. Lane - Los Gatos CA, US
Hemant P. Mungekar - Campbell CA, US
Susanne Schlaefer - Aschaffenburg, DE
Wolfgang Buschbeck - Hanau, DE
Juergen Henrich - Limeshain, DE
Andreas Lopp - Freigericht-Somborn, DE
International Classification:
H01L 31/18
US Classification:
438 57, 118719
Abstract:
The present invention generally provides a high throughput substrate processing system that is used to form one or more regions of a solar cell device. In one configuration of a processing system, one or more solar cell passivating or dielectric layers are deposited and further processed within one or more processing chambers contained within the high throughput substrate processing system. The processing chambers may be, for example, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) or sputtering chambers, thermal processing chambers (e.g., RTA or RTO chambers), substrate reorientation chambers (e.g., flipping chambers) and/or other similar processing chambers.
Deposition Apparatus And Methods To Reduce Deposition Asymmetry
US Patent:
2012000, Jan 5, 2012
Filed:
Jun 30, 2011
Appl. No.:
13/173197
Inventors:
Alan Ritchie - Menlo Park CA, US
Michael S. Cox - Gilroy CA, US
Michael S. Cox - Gilroy CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 14/34
US Classification:
20429806, 20429811, 20429808, 20429807
Abstract:
One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder.
Hall Effect Plasma Source
US Patent:
2013033, Dec 19, 2013
Filed:
Jun 12, 2013
Appl. No.:
13/916087
Inventors:
Michael S. COX - Gilroy CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/52
US Classification:
118723FI
Abstract:
The present invention generally relates to an apparatus for treating a substrate. The apparatus utilizes two plasma sources that operate in different phases (i.e., one positive phase while the other negative phase). By alternating phases, the current density is alternated between the sources such that one source can generate ions while the other source can generate electrons. Therefore, each adjacent source acts as the cathode in opposite to the anode of the adjacent source. By having adjacent sources having alternating phases, uniform deposition occurs.