Inventors:
Jonathan K. Abrokwah - Tempe AZ
Ravi Droopad - Tempe AZ
Corey D. Overgaard - Phoenix AZ
Brian Bowers - Mesa AZ
Michael P. LaMacchia - Gilbert AZ
Bruce A. Bernhardt - Chandler AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2120
Abstract:
A method of fabricating submicron HFETs includes forming a buffered substrate structure with a supporting substrate of GaAs, a portion of low temperature AlGaAs grown on the supporting substrate at a temperature of approximately 300. degree. C. , a layer of low temperature GaAs grown on the portion AlGaAs layer at a temperature of 200. degree. C. , a layer of low temperature AlGaAs grown on the GaAs layer at a temperature of 400. degree. C. , and a buffer layer of undoped GaAs grown on the second AlGaAs layer. Complementary pairs of HFETs can be formed on the buffered substrate structure, since the structure supports the operation of p and n type transistors equally well.