MICHAEL OLGAR THOMPSON
Pilots at Oakwood Ln, Ithaca, NY

6380044, Apr 30, 2002

Apr 12, 2000

09/548326

Somit Talwar - Palo Alto CA
Yun Wang - San Jose CA
Michael O. Thompson - Ithaca NY

Ultratech Stepper, Inc. - San Jose CA

H01L 21336

438308, 438795

A high-speed semiconductor transistor and process for forming same. The process includes forming, in a Si substrate ( ), spaced apart shallow trench isolations (STIs) ( ), and a gate ( ) atop the substrate between the STIs. Then, regions ( ) of the substrate on either side of the gate are either amorphized and doped, or just doped. In certain embodiments of the invention, extension regions ( or ′) and deep drain and deep source regions ( or ′) are formed. In other embodiments, just deep drain and deep source regions ( or ′) are formed. A conformal layer ( ) is then formed atop the substrate, covering the substrate surface ( ) and the gate. The conformal layer can serve to absorb light and/or to distribute heat to the underlying structures. Then, at least one of front-side irradiation ( ) and back-side irradiation ( ) is performed to activate the drain and source regions and, if present, the extensions. Explosive recrystallization ( ) is one mechanism used to achieve dopant activation.

6787825, Sep 7, 2004

Jan 2, 2001

09/463906

Hans Gude Gudesen - Brussels, BE
Per-Erik Nordal - Asker, NO
Geirr I. Leistad - Sandvika, NO
Johan Carlsson - Linköping, SE
Göran Gustafsson - Linköping, SE
Michael O Thompson - Ithaca NY

Thin Film Electronics ASA - Oslo

H01L 2980

257278, 257390, 257E27026

A data storage/processing apparatus includes ROM and/or WORM and/or REWRITEABLE memory modules and/or processing modules provided as a single main layer or multiple main layers on top of a substrate. Transistors and/or diodes operate the apparatus. In one set of embodiments, at least some of the transistors and/or diodes are provided on or in the substrate. In another set of embodiments, at least some of the layers on the top of the substrate include low-temperature compatible organic materials and/or low temperature compatible processes inorganic films, and the transistors and/or diodes need not be disposed on or in the substrate. In a related fabricating method, the memory and/or processing modules are provided on the substrate by depositing the layers in successive steps under thermal conditions that avoid subjecting an already-deposited, processed underlying layers to static or dynamic temperatures exceeding given stability limits, particularly with regard to organic materials.

6479821, Nov 12, 2002

Sep 11, 2000

09/659094

Andrew M. Hawryluk - Los Altos Hills CA
Somit Talwar - Palo Alto CA
Yun Wang - San Jose CA
David A. Markle - Saratoga CA
Michael O. Thompson - Ithaca NY

Ultratech Stepper, Inc. - San Jose CA

G03G 516

2503161, 438530

A method, apparatus and system for controlling the amount of heat transferred to a process region ( ) of a workpiece (W) from exposure with a pulse of radiation ( ), which may be in the form of a scanning beam (B), using a thermally induced phase switch layer ( ). The apparatus of the invention is a film stack ( ) having an absorber layer ( ) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs radiation and converts the absorbed radiation into heat. The phase switch layer is deposited above or below the absorber layer. The phase switch layer may comprise one or more thin film layers, and may include a thermal insulator layer and a phase transition layer. Because they are in close proximity, the portion of the phase switch layer covering the process region has a temperature that is close to the temperature of the process region. The phase of the phase switch layer changes from a first phase (e. g.

6495390, Dec 17, 2002

Aug 27, 2001

09/940102

Andrew M. Hawryluk - Los Altos Hills CA
Somit Talwar - Palo Alto CA
Yun Wang - San Jose CA
Michael O. Thompson - Ithaca NY

Ultratech Stepper, Inc. - San Jose CA

H01L 2100

438 56, 438 24, 438 54

A method, apparatus and system for controlling the amount of heat transferred to a process region ( ) of a workpiece (W) from exposure with laser radiation ( ) using a thermally induced reflectivity switch layer ( ). The apparatus of the invention is a film stack ( ) having an absorber layer ( ) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer ( ) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region. The reflectivity of the reflectivity switch layer changes from a low reflectivity state to a high reflectivity state at a critical temperature so as to limit the amount of radiation absorbed by the absorber layer by reflecting the incident radiation.

6635588, Oct 21, 2003

Feb 19, 2002

10/078842

Andrew M. Hawryluk - Los Altos Hills CA
Somit Talwar - Palo Alto CA
Yun Wang - San Jose CA
Michael O. Thompson - Ithaca NY

Ultratech Stepper, Inc. - San Jose CA

H01L 2126

438795

Method for controlling heat transferred to a workpiece (W) process region ( ) from laser radiation ( ) using a thermally induced reflectivity switch layer ( ). A film stack ( ) is formed having an absorber layer ( ) atop the workpiece with a portion covering the process region. The absorber layer absorbs and converts laser radiation into heat. Reflective switch layer ( ) is deposited atop the absorber layer. The reflective switch layer comprises one or more layers, e. g. thermal insulator and reflectivity transition layers. The reflective switch layer covering the process region has a temperature related to the temperature of the process region. Reflectivity of the switch layer changes from a low to a high reflectivity state at a critical temperature of the process region, limiting radiation absorbed by the absorber layer by reflecting incident radiation when switched. This limits the amount of heat transferred to the process region from the absorber layer.

2002002, Feb 28, 2002

Jul 6, 2001

09/899096

Michael Thompson - Ithaca NY, US
Richard Womack - Albuquerque NM, US
Johan Carlsson - Linkoping, SE
Goran Gustafsson - Linkoping, SE

G11C011/22

365/117000

In a non-volatile passive matrix memory device comprising an electrically polarizable dielectric memory material exhibiting hysteresis between first and second sets of addressing electrodes, the electrodes of the first set are word lines and the electrodes of the second set are bit lines of the memory device. A memory cell with a capacitor-like structure is defined in the memory material at the overlap between a word line and a bit line. The word lines are divided into segments with each segments sharing and being defined by adjoining bit lines and means are provided for connecting each bit line of a segment with a sensing means, thus enabling simultaneous connections of all memory cells of a word line segment for readout via the bit lines of the segment. Each sensing means senses the charge flow in a bit line in order to determine a logical value stored in a memory cell defined by the bit line. In a readout method for a memory device of this kind a word line of a segment is activated according to a protocol by setting its potential to a switching voltage of the memory cell during at least a portion of a read cycle, while keeping the bit lines of the segment at zero potential, during which read cycle a logical value stored in the individual memory cells is sensed by the sensing means. Use in a volumetric data storage apparatus with a plurality of stacked layers which each comprises a non-volatile passive matrix memory device.

8633787, Jan 21, 2014

Sep 21, 2007

12/442369

Shahyaan Desai - Ithaca NY, US
Anil N. Netravali - Ithaca NY, US
Michael O. Thompson - Ithaca NY, US

Cornell Research Foundation, Inc. - Ithaca NY

H03H 9/24, H03H 9/50, G01P 15/08

333186, 7350415, 333197, 310309

A microelectromechanical structure (MEMS) device includes a secondary MEMS element displaceably coupled to a substrate. A primary MEMS element is displaceably coupled to the secondary MEMS element and has a resonant frequency substantially equal to the secondary MEMS element and has a much larger displacement than the secondary MEMS element.

7020005, Mar 28, 2006

Feb 10, 2005

11/053905

Christer Karlsson - Linköping, SE
Per Hamberg - Kisa, SE
Staffan Björklid - Linköping, SE
Michael O. Thompson - Ithaca NY, US
Richard Womack - Albuquerque NM, US

Thin Film Electronics, ASA - Oslo

G11C 11/22

365145, 36518519

A method of operating a passive matrix addressable ferroelectric device having a voltage pulse protocol with a pre-disturb and post-disturb cycle before and after a disturb generating operation cycle respectively in order to minimize the effect of disturb voltage on non-addressed memory cells, when such voltages are generated thereto in the operation cycle when It is applied for either a write or read operation.

8094351, Jan 10, 2012

Oct 9, 2009

12/576402

Shahyaan Desai - Ithaca NY, US
Michael O. Thompson - Ithaca NY, US
S. Leigh Phoenix - Ithaca NY, US

Cornell Research Foundation, Inc. - Ithaca NY

G02B 26/08

3591981, 3591961, 3592241, 310300

Fibrous micro-composite materials are formed from micro fibers. The fibrous micro-composite materials are utilized as the basis for a new class of MEMS. In addition to simple fiber composites and microlaminates, fibrous hollow and/or solid braids, can be used in structures where motion and restoring forces result from deflections involving torsion, plate bending and tensioned string or membrane motion. In one embodiment, fibrous elements are formed using high strength, micron and smaller scale fibers, such as carbon/graphite fibers, carbon nanotubes, fibrous single or multi-ply graphene sheets, or other materials having similar structural configurations. Cantilever beams and torsional elements are formed from the micro-composite materials in some embodiments.