DR. MICHAEL K TURNER, DC
Chiropractic at William Cannon Dr, Austin, TX

6534423, Mar 18, 2003

Dec 27, 2000

09/752698

Michael Turner - Austin TX

Novellus Systems, Inc. - San Jose CA

H01L 2131

438784, 438788

An inductively-coupled hydrogen plasma (ICP) is used to passivate a plasma-enhanced chemical vapor deposition reactor following an in situ cleaning step. The hydrogen ICP effectively removes the fluorine and hydrogen that typically become impregnated in the walls of the reaction chamber during the in situ clean and thereby reduces the amount of “outgassing” that occurs during subsequent deposition cycles. This outgassing may cause the film of deposition material that normally forms on the walls to flake, significantly reducing the yield of usable devices. The hydrogen ICP passivation process has been found particularly effective in conjunction with the deposition of heavily-doped silicon oxide layers.

5586327, Dec 17, 1996

Sep 27, 1994

8/313481

Richard Bealkowski - Austin TX
John W. Blackledge - Boca Raton FL
Michael R. Turner - Austin TX

International Business Machines Corporation - Austin TX

G06F 900

395652

A method and apparatus for extending initialization of a personal data processing system using multiple levels of bootstrap code is provided. The first level of bootstrap code is stored in a non-volatile memory device associated with a processor of the data processing system. The second level of code is stored on a system partition or other section of a fixed disk memory storage device. The second level of bootstrap code is user configurable, and also provides access to a file system. A first initialization procedure is performed by executing the first level of bootstrap code, where the first initialization procedure performs a memory check self-test of the data processing system and conditions the data processing system for a program load. The second level of bootstrap code is then executed performing a second initialization procedure which performs specific initialization steps according to the configuration of the second level of bootstrap code. A file system containing any required test and initialization code may be accessed by the second initialization procedure.

5852738, Dec 22, 1998

Nov 19, 1996

8/752410

Richard Bealkowski - Austin TX
Doyle Stanfill Cronk - Austin TX
Benjamin Russell Grimes - Austin TX
Michael Robert Turner - Austin TX

International Business Machines Corporation - Armonk NY

G06F 1210

39580001

A method for managing a memory address space in a memory system, the memory system having multiple block address translation entries, each entry defining a portion of the memory address space, including the steps of determining that a received virtual address references a portion of the memory address space not defined by any of the block address translation entries, reallocating at least one of the block address translation entries to define a portion of the memory address space including the received virtual address, and providing a physical address matching the virtual address by using the reallocated block address translation entries. In addition, an apparatus for managing a memory address space in a memory system, the memory system having multiple block address translation entries, each entry defining a portion of the memory address space, including apparatus for determining that a received virtual address references a portion of the memory address space not defined by any of the block address translation entries, apparatus for reallocating at least one of the block address translation entries to define a portion of the memory address space including the received virtual address, and apparatus for providing a physical address matching the virtual address by using the reallocated block address translation entries.

7064087, Jun 20, 2006

Nov 15, 2001

09/998993

Michael Turner - Austin TX, US
Waikit Fung - Mountain View CA, US
Oliver Graudejus - Sunnyvale CA, US
Doug Winandy - Austin TX, US

Novellus Systems, Inc. - San Jose CA

H01L 21/31

438787, 438783, 438784, 438 5

A method for depositing a doped silicon dioxide layer is provided that allows the dopant concentration in the silicon dioxide layer to be controlled throughout the layer. By controlling the dopant concentration throughout the layer the etch profile of contact holes etched into the layer can be controlled and footing can be prevented or eliminated. During the deposition of the silicon dioxide, the amount of dopant is increased as the temperature of the wafer is increased and held constant while the temperature of the wafer is constant.

5636352, Jun 3, 1997

Dec 16, 1994

8/357835

Richard Bealkowski - Austin TX
Michael R. Turner - Austin TX

International Business Machines Corporation - Armonk NY

G06F 930

395384

A method and apparatus for executing a condensed instruction stream by a processor including receiving an instruction including an instruction identifier and multiple of instruction synonyms within the instruction, generating at least one full width instruction for each instruction synonym, and executing by the processor the generated full width instructions.