MICHAEL GIVENS, M.D.
Medical Practice at Baseline Rd, Mesa, AZ

2012015, Jun 21, 2012

Dec 16, 2010

12/970511

Christa R. Ancri - Potomac MD, US
Michael Givens - Phoenix AZ, US
Satyendra Hiredesai - Phoenix AZ, US
Prashant Lodha - Phoenix AZ, US
Matthew Scott Love - Allentown PA, US
Frank E. Schnur - Hopkinton MA, US
Sangita R. Shah - Middlesex, GB

American Express Travel Related Services Company, Inc. - New York NY

G06Q 10/00

705 5, 705 11

A system and method for generating a dynamic optimal travel solution is disclosed. The method includes receiving an optimal travel solution and receiving consumption data, wherein the consumption data includes an actual market share. The method also includes receiving quality of service index data (QSI), wherein the QSI includes a maximum realistic market share, and generating a dynamic optimal travel solution, in response to the optimal travel solution, the consumption data, and the QSI.

2010010, May 6, 2010

Nov 6, 2008

12/266317

Michael Givens - Phoenix AZ, US
Mike Halpin - Scottsdale AZ, US
Matthew G. Goodman - Chandler AZ, US
Keir Kosco - Chandler AZ, US

ASM AMERICA, INC. - Phoenix AZ

B05C 13/02

118500

A substrate support system comprises a substrate holder for supporting a substrate. The substrate holder comprises an interior portion sized and shaped to extend beneath most or all of a substrate supported on the substrate holder. The substrate holder has mass density that varies, preferably in order to compensate for variations in substrate temperature owing to surface geometry variations of the interior portion, so as to provide a more uniform thermal coupling between the substrate and substrate holder. The substrate holder is preferably configured to be spaced further apart from a substrate at the center than at the outer perimeter.

7026219, Apr 11, 2006

Feb 11, 2002

10/074722

Christophe F. Pomarede - Phoenix AZ, US
Michael E. Givens - Phoenix AZ, US
Eric J. Shero - Phoenix AZ, US
Michael A. Todd - Phoenix AZ, US

ASM America, Inc. - Phoenix AZ

H01L 21/336, H01L 21/20, H01L 21/4763, H01L 21/469

438285, 438508, 438585, 438591, 438785

Methods are provided herein for forming electrode layers over high dielectric constant (“high k”) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-containing gate electrode. In particular, a seed deposition phase includes conditions designed for minimizing hydrogen reduction of the gate dielectric, including low hydrogen content, low temperatures and/or low partial pressures of the silicon source gas. Conditions are preferably changed for higher deposition rates and deposition continues in a bulk phase. Desirably, though, hydrogen diffusion is still minimized by controlling the above-noted parameters. In one embodiment, high k dielectric reduction is minimized through omission of a hydrogen carrier gas. In another embodiment, higher order silanes aid in reducing hydrogen content for a given deposition rate.

7122085, Oct 17, 2006

Jul 29, 2003

10/629029

Eric J. Shero - Phoenix AZ, US
Michael E. Givens - Phoenix AZ, US
Ryan Schmidt - Mesa AZ, US

ASM America, Inc. - Phoenix AZ

C23C 16/448

118726, 34209, 34211, 34215, 34226, 392388, 392389

Preferred embodiments of the present invention provides a sublimation system employing guidance structures including certain preferred embodiments having a high surface area support medium onto which a solid source material for vapor reactant is coated. Preferably, a guidance structure is configured to facilitate the repeated saturation of the carrier gas with the solid source for a vapor reactant. Methods of saturating a carrier gas using guidance structures are also provided.

7790556, Sep 7, 2010

Jun 9, 2005

11/148721

Christophe F. Pomarede - Phoenix AZ, US
Michael E. Givens - Phoenix AZ, US
Eric J. Shero - Phoenix AZ, US
Michael A. Todd - Phoenix AZ, US

ASM America, Inc. - Phoenix AZ

H01L 21/336, H01L 21/3205, H01L 21/4763, H01L 21/763

438285, 438591, 438770, 438785, 438786, 257E21196

Methods are provided herein for forming electrode layers over high dielectric constant (“high k”) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-containing gate electrode. In particular, a seed deposition phase includes conditions designed for minimizing hydrogen reduction of the gate dielectric, including low hydrogen content, low temperatures and/or low partial pressures of the silicon source gas. Conditions are preferably changed for higher deposition rates and deposition continues in a bulk phase. Desirably, though, hydrogen diffusion is still minimized by controlling the above-noted parameters. In one embodiment, high k dielectric reduction is minimized through omission of a hydrogen carrier gas. In another embodiment, higher order silanes, aid in reducing hydrogen content for a given deposition rate.

2014006, Mar 6, 2014

Aug 28, 2012

13/597108

Keith R. Lawson - Phoenix AZ, US
Michael E. Givens - Phoenix AZ, US

ASM IP Holding B.V. - Almere

G06F 19/00

700117

Embodiments of the present disclosure can help increase throughput and reduce resource conflicts and delays in semiconductor processing tools. An exemplary method according to various aspects of the present disclosure includes analyzing, by a computer program operating on a computer system, a plurality of expected times to complete each of a respective plurality of actions to be performed by a semiconductor processing tool, the semiconductor processing tool including a first process module and a second process module.

2010011, May 13, 2010

Nov 5, 2009

12/613436

Michael Givens - Phoenix AZ, US
Matthew Goodman - Chandler AZ, US
Mark Hawkins - Gilbert AZ, US
Brad Halleck - Salem OR, US
Herbert Terhorst - , NL

ASM AMERICA, INC. - Phoenix AZ

C23C 16/00

118715000

A reaction chamber having a reaction spaced defined therein, wherein the reaction space is tunable to produce substantially stable and laminar flow of gases through the reaction space. The substantially stable and laminar flow is configured to improve the uniformity of deposition on substrates being processed within the reaction chamber to provide a predictable deposition profile.