MICHAEL G SCOTT, M.D.
Anesthesiologist Assistant at Circle Dr, Colorado Springs, CO

5792592, Aug 11, 1998

May 24, 1996

8/653444

Hiroto Uchida - Colorado Springs CO
Nobuyuki Soyama - Colorado Springs CO
Kensuke Kageyama - Saitama, JP
Katsumi Ogi - Saitama, JP
Michael C. Scott - Colorado Springs CO
Larry D. McMillan - Colorado Springs CO
Carlos A. Paz de Araujo - Colorado Springs CO

Symetrix Corporation - Colorado Springs CO
Mitsubishi Materials Corporation

G03F 730

430313

A photosensitive liquid solution is used to make thin films for use in integrated circuits. The photosensitive liquid solution contains a photo initiator, and solvent, and a mixture of metals bonded to free-radical-susceptible monomers. The metals are mixed in amounts corresponding to the desired stoichiometry of a metal oxide thin film that derives from the. The photosensitive liquid solution is applied to a substrate, soft baked, and exposed to ultraviolet radiation under a photo mask. The ultraviolet radiation patterns the soft-baked film through a free radical polymerization chain reaction. A solvent etch is used to remove the unpolymerized portion of the polymerized film. The remaining thin film pattern is annealed to provide a patterned metal oxide film.

5846597, Dec 8, 1998

Jun 16, 1997

8/876305

Gary F. Derbenwick - Colorado Springs CO
Larry D. McMillan - Colorado Springs CO
Narayan Solayappan - Colorado Springs CO
Michael C. Scott - Colorado Springs CO
Carlos A. Paz de Araujo - Colorado Springs CO
Shinichiro Hayashi - Colorado Springs CO

Symetrix Corporation - Colorado Springs CO
Matsushita Electronics Corporation

B05D 512

427 96

A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, a small amount of hexamethyl-disilazane is added to the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.

5516363, May 14, 1996

Sep 8, 1994

8/302585

Masamichi Azuma - Colorado Springs CO
Bradley M. Melnick - Mesa AZ
Michael C. Scott - Colorado Springs CO
Carlos A. Paz de Araujo - Colorado Springs CO

Symetrix Corporation - Colorado Springs CO
Matsushita Electronics Corporation - Osaka

C09D 400

10628718

Metal doping agents are introduced into metal polyoxyalkylated liquid precursor solutions for use in processes for forming thin-layer capacitors (10) to be used in integrated circuits such as DRAMS and the like. The dopants serve to reduce capacitor leakage current by altering a dominant type of electron emission, as determined by a change in the slope of a line plotted as leakage current versus bias voltage. The specially doped precursor solutions preferably include mixtures of Ce, Cr, Dy, Mn, and Ti moieties.

6022669, Feb 8, 2000

Jul 26, 1996

8/687721

Hiroto Uchida - Saitama, JP
Nobuyuki Soyama - Saitama, JP
Kensuke Kageyama - Saitama, JP
Katsumi Ogi - Saitama, JP
Michael C. Scott - Colorado Springs CO
Joseph D. Cuchiaro - Colorado Springs CO
Larry D. McMillan - Colorado Springs CO
Carlos A. Paz de Araujo - Colorado Springs CO

Symetrix Corporation - Colorado Springs CO
Mitsubishi Materials Corporation

G03F 700, G03C 173

430313

A first photosensitive liquid solution is applied to a substrate, patterned through exposure to radiation and development, and annealed to form a desired solid material, such as SrBi. sub. 2 Ta. sub. 2 O. sub. 9, that is incorporated into a component of an integrated circuit Fabrication processes are designed protect the self-patterned solid material from conventional IC processing and to protect the conventional materials, such as silicon, from elements in the self-patterned solid material. In one embodiment, a layer of bismuth oxide is formed on the SrBi. sub. 2 Ta. sub. 2 O. sub. 9 and a silicon oxide hole is etched to the bismuth oxide. The bismuth oxide protects the SrBi. sub. 2 Ta. sub. 2 O. sub. 9 from the etchant, and is reduced by the etchant to bismuth. Any remaining bismuth oxide and much of the bismuth are vaporized in the anneal, and the remaining bismuth is incorporated into the SrBi. sub. 2 Ta. sub. 2 O. sub. 9.

6133050, Oct 17, 2000

Mar 17, 1995

8/405885

Masamichi Azuma - Colorado Springs CO
Larry D. McMillan - Colorado Springs CO
Carlos A. Paz de Araujo - Colorado Springs CO
Michael C. Scott - Colorado Springs CO

Symetrix Corporation - Colorado Springs CO
Matsushita Electronics Corporation

H01L 2131

438 3

A precursor solution formed of a liquid polyoxyalkylated metal complex in as solvent is applied to a substrate in the formation of a metal oxide thin film. The liquid thin film is baked in air to a temperature up to 500. degree. C. while UV radiation having a wavelength ranging from 180 nm to 300 nm is applied. The thin film can be twice-baked at increasing temperatures while UV radiation is applied at one or both bakings. The film is then annealed at temperature ranging from about 700. degree. C. to 850. degree. C. to produce a thin-film solid metal oxide product. Alternatively, the UV radiation may be applied to the liquid precursor, the thin film may be annealed with UV radiation, or combinations of such applications of UV radiation to the precursor, to the thin film before or after baking, and/or UV annealing may be used. The use of UV radiation significantly reduces the leakage current and carbon impurity content of the final metal oxide.

5825057, Oct 20, 1998

Dec 5, 1994

8/349692

Hitoshi Watanabe - Tokyo, JP
Carlos A. Paz De Araujo - Colorado Springs CO
Hiroyuki Yoshimori - Kanagawa, JP
Michael C. Scott - Colorado Springs CO
Takashi Mihara - Saitama, JP
Joseph D. Cuchiaro - Colorado Springs CO
Larry D. McMillan - Colorado Springs CO

Symetrix Corporation
Olympus Optical Co., Ltd.

H01L 2976

257295

A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Prebaking the substrate and oxygen in the RTP and anneal is essential, except for high bismuth content precursors. Excess bismuth between 110% and 140% of stoichiometry and RTP temperature of 725. degree. C. is optimum. The film is formed in two layers, the first of which uses a stoichiometric precursor and the second of which uses an excess bismuth precursor. The electronic properties are so regularly dependent on process parameters and material composition, and such a wide variety of materials are possible, that electronic devices can be designed by selecting from a continuous record of the values of one or more electronic properties as a continuous function of the process parameters and material composition, and utilizing the selected process and material composition to make a device.

5723361, Mar 3, 1998

Jul 5, 1994

8/270510

Masamichi Azuma - Colorado Springs CO
Carlos A. Paz De Araujo - Colorado Springs CO
Michael C. Scott - Colorado Springs CO

Symetrix Corporation - Colorado Springs CO
Matsushita Electronics Corporation - Osaka

H01L 2144

437180

A method for fabricating an integrate circuit capacitor having a dielectric layer comprising BST with excess A-site and B-site materials such as barium and titanium added. An organometallic or metallic soap precursor solution is prepared comprising a stock solution of BST of greater than 99. 999% purity blended with excess A-site and B-site materials such as barium and titanium such that the barium is in the range of 0. 01-100 mol %, and such that the titanium is in the range of 0. 01-100 mol %. A xylene exchange is then performed to adjust the viscosity of the solution for spin-on application to a substrate. The precursor solution is spun on a first electrode, dried at 400. degree. C. for 2 to 10 minutes, then annealed at 650. degree. C. to 800. degree. C. for about an hour to form a layer of BST with excess titanium.

5759923, Jun 2, 1998

Mar 14, 1996

8/615806

Larry D. McMillan - Colorado Springs CO
Michael C. Scott - Colorado Springs CO
Carlos A. Paz de Araujo - Colorado Springs CO
Tatsuo Otsuki - Osaka, JP
Shinichiro Hayashi - Colorado Springs CO

Symetrix Corporation - Colorado Springs CO
Matsushita Electronics Corporation

H01L 2100

438788

A precursor liquid comprising silicon in a xylenes solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of silicon dioxide or silicon glass on the substrate. Then an integrated circuit is completed to include at least a portion of the silicon dioxide or silicon glass layer as an insulator for an electronic device in the integrated circuit.

5601869, Feb 11, 1997

Jun 7, 1995

8/478399

Michael C. Scott - Colorado Springs CO
Carlos A. Paz de Araujo - Colorado Springs CO

Symetrix Corporation - Colorado Springs CO

B05D 512

4271263

A liquid precursor solution for use according to a method of manufacturing metal oxide electronic components includes a polyoxyalkylated metal complex dispersed in an alkane solvent. The alkane solvent is preferably n-octane.