MR. MICHAEL EUGENE JOHNSON, PH.D.
Psychologist at Warner Rd, Tempe, AZ
License number
Arizona 3462
Category
Social Work
Type
Counseling
License number
Arizona 3462
Category
Psychologist
Type
Psychologist
Address
Address
430 WEST Warner Rd SUITE 104, Tempe, AZ 85284
Phone
(602) 421-7481
(580) 785-0751 (Fax)
(480) 785-0751 (Fax)
(580) 785-0751 (Fax)
(480) 785-0751 (Fax)
Professional information
Owner At Lighten Your Load, Llc
Position:
Psychologist & Sole Proprietor at Lighten Your Load, LLC, Owner at Lighten Your Load, LLC
Location:
Phoenix, Arizona Area
Industry:
Health, Wellness and Fitness
Work:
Lighten Your Load, LLC
- Tempe, AZ since Aug 2006
-
Psychologist & Sole Proprietor
Lighten Your Load, LLC
since May 2006
-
Owner
Argosy University/Phoenix
Aug 2002 - Dec 2006
-
Adjunct Professor
Arizona State University
Aug 2001 - Aug 2006
-
Staff Psychologist
Children and Adult Psychological Services, LLC
Jan 2002 - Jul 2006
-
Psychologist in Private Practice
James Madison University
Aug 1999 - Jul 2001
-
Staff Psychologist
James Madison University
Aug 1999 - Jul 2001
-
Instructor
American Psychological Association
Oct 1995 - Jan 2001
-
Member
Ball State University
Aug 1998 - Jul 1999
-
Predoctoral Psychology Internship
Education:
Penn State (APA 1995 - 2000
Ph.D, Counseling Psychology Penn State University 1995 - 2000
Ph.D., Counseling Psychology Internship: Ball State University 1998 - 1999
Rutgers, The State University of New Jersey-New Brunswick 1993 - 1995
M.Ed., Counseling Psychology Rutgers, The State University of New Jersey-New Brunswick 1987 - 1993
B.A., Physics
Ph.D, Counseling Psychology Penn State University 1995 - 2000
Ph.D., Counseling Psychology Internship: Ball State University 1998 - 1999
Rutgers, The State University of New Jersey-New Brunswick 1993 - 1995
M.Ed., Counseling Psychology Rutgers, The State University of New Jersey-New Brunswick 1987 - 1993
B.A., Physics
Interests:
theories of change, web design, new technology, eReaders, softball, archery
Dr. Michael E Johnson, Tempe AZ - PHD
Specialties:
Psychology, Counseling
Address:
430 W Warner Rd STE 104, Tempe 85284
(580) 785-0751 (Fax)
(580) 785-0751 (Fax)
Languages:
English
Michael Johnson - Tempe, AZ
Work:
Holland Res
Maintenance Technician II Pillar Communities
Lead maintenance - Supervised two employees Extended Stay Hotels
Supervisor Noga Property Management
Maintenance Supervisor
Maintenance Technician II Pillar Communities
Lead maintenance - Supervised two employees Extended Stay Hotels
Supervisor Noga Property Management
Maintenance Supervisor
Education:
RSI - Phoenix, AZ
Universal HVAC in A/C Marcos de Niza High School - Tempe, AZ
GED in basic instructor- Richard J. Kafka - Chandler, AZ
CPO Cert #CPO-418161 in Pools
Universal HVAC in A/C Marcos de Niza High School - Tempe, AZ
GED in basic instructor- Richard J. Kafka - Chandler, AZ
CPO Cert #CPO-418161 in Pools
Michael Johnson - Tempe, AZ
Work:
ShootersRev.com
Co-Founder - ShootersRev.com Numerica Credit Union - Spokane, WA
Member Services Representative Wells Fargo - Spokane, WA
Bank Teller / Product Sales
Co-Founder - ShootersRev.com Numerica Credit Union - Spokane, WA
Member Services Representative Wells Fargo - Spokane, WA
Bank Teller / Product Sales
Education:
Gonzaga Preparatory High School - Spokane, WA
High School Diploma Concordia University of California - Irvine, CA
Bachelor of Arts in Finance
High School Diploma Concordia University of California - Irvine, CA
Bachelor of Arts in Finance
Michael Eugene Johnson, Chandler AZ
Specialties:
Psychologist
Address:
1351 N Alma School Rd, Chandler, AZ 85224
430 W Warner Rd, Tempe, AZ 85284
430 W Warner Rd, Tempe, AZ 85284
Solder Bump/Under Bump Metallurgy Structure For High Temperature Applications
US Patent:
2008013, Jun 12, 2008
Filed:
Dec 11, 2006
Appl. No.:
11/609036
Inventors:
Michael E. Johnson - Tempe AZ, US
Thomas Strothmann - Tucson AZ, US
Joan Vrtis - Mesa AZ, US
Thomas Strothmann - Tucson AZ, US
Joan Vrtis - Mesa AZ, US
International Classification:
H01L 23/488
US Classification:
257737, 257E23023
Abstract:
Solder bump structures, which comprise a solder bump on a UBM structure, are provided for operation at temperatures of 250° C. and above. According to a first embodiment, the UBM structure comprises layers of Ni—P, Pd—P, and gold, wherein the Ni—P and Pd—P layers act as barrier and/or solderable/bondable layers. The gold layer acts as a protective layer. According to second embodiment, the UBM structure comprises layers of Ni—P and gold, wherein the Ni—P layer acts as a diffusion barrier as well as a solderable/bondable layer, and the gold acts as a protective layer. According to a third embodiment, the UBM structure comprises: (i) a thin layer of metal, such as titanium or aluminum or Ti/W alloy; (ii) a metal, such as NiV, W, Ti, Pt, TiW alloy or Ti/W/N alloy; and (iii) a metal alloy such as Pd—P, Ni—P, NiV, or TiW, followed by a layer of gold. Alternatively, a gold, silver, or palladium bump may be used instead of a solder bump in the UBM structure.
Wafer-Level Interconnect For High Mechanical Reliability Applications
US Patent:
8143722, Mar 27, 2012
Filed:
Oct 4, 2007
Appl. No.:
11/867646
Inventors:
Anthony Curtis - Gilbert AZ, US
Guy F. Burgess - Gilbert AZ, US
Michael Johnson - Tempe AZ, US
Ted Tessier - Chandler AZ, US
Yuan Lu - Phoenix AZ, US
Guy F. Burgess - Gilbert AZ, US
Michael Johnson - Tempe AZ, US
Ted Tessier - Chandler AZ, US
Yuan Lu - Phoenix AZ, US
Assignee:
Flipchip International, LLC - Phoenix AZ
International Classification:
H01L 23/48, H01L 23/52
US Classification:
257738, 257772, 257778
Abstract:
An interconnect structure comprises a solder including nickel (Ni) and tin (Sn), with the nickel in a range of 0. 01 to 0. 20 percent by weight. The interconnect structure further includes an intermetallic compound (IMC) layer in contact with the solder. The (IMC) layer comprises a compound of copper and nickel.
Wafer-Level Interconnect For High Mechanical Reliability Applications
US Patent:
2012014, Jun 14, 2012
Filed:
Feb 16, 2012
Appl. No.:
13/397876
Inventors:
Anthony Curtis - Gilbert AZ, US
Guy F. Burgess - Gilbert AZ, US
Michael Johnson - Tempe AZ, US
Ted Tessier - Chandler AZ, US
Yuan Lu - Phoenix AZ, US
Guy F. Burgess - Gilbert AZ, US
Michael Johnson - Tempe AZ, US
Ted Tessier - Chandler AZ, US
Yuan Lu - Phoenix AZ, US
Assignee:
FLIPCHIP INTERNATIONAL, LLC - Phoenix AZ
International Classification:
H01L 23/48
US Classification:
257738, 257778, 257E23021
Abstract:
An interconnect structure comprises a solder including nickel (Ni) in a range of 0.01 to 0.20 percent by weight. The interconnect structure further includes an intermetallic compound (IMC) layer in contact with the solder. The IMC layer comprises a compound of copper and nickel.
Methods And Structures For A Vertical Pillar Interconnect
US Patent:
2011000, Jan 6, 2011
Filed:
Jun 30, 2010
Appl. No.:
12/828003
Inventors:
Guy F. Burgess - Phoenix AZ, US
Anthony Curtis - Phoenix AZ, US
Michael E. Johnson - Tempe AZ, US
Gene Stout - Phoenix AZ, US
Theodore G. Tessier - Phoenix AZ, US
Anthony Curtis - Phoenix AZ, US
Michael E. Johnson - Tempe AZ, US
Gene Stout - Phoenix AZ, US
Theodore G. Tessier - Phoenix AZ, US
Assignee:
FlipChip International, LLC - Phoenix AZ
International Classification:
H01L 21/768
US Classification:
438614, 257E21589
Abstract:
In wafer-level chip-scale packaging and flip-chip packaging and assemblies, a solder cap is formed on a vertical pillar. In one embodiment, the vertical pillar overlies a semiconductor substrate. A solder paste, which may be doped with at least one trace element, is applied on a top surface of the pillar structure. A reflow process is performed after applying the solder paste to provide the solder cap.
Wafer-Level Moat Structures
US Patent:
7126164, Oct 24, 2006
Filed:
Sep 26, 2003
Appl. No.:
10/672165
Inventors:
Michael E. Johnson - Tempe AZ, US
Peter Elenius - Scottsdale AZ, US
Deok Hoon Kim - Tempe AZ, US
Peter Elenius - Scottsdale AZ, US
Deok Hoon Kim - Tempe AZ, US
Assignee:
FlipChip International LLC - Phoenix AZ
International Classification:
H01L 33/00
US Classification:
257 99, 438 15, 257692
Abstract:
A wafer-level CSP () includes at least one die () from a wafer. The wafer-level CSP has a plurality of solder ball pads (), a solder ball () at each solder ball pad and a polymer collar () around each solder ball. A moat () is formed in the surface of a polymer layer () disposed on the wafer during manufacturing of the wafer-level CSP. A temporarily liquified residual () from the polymer collar, which occurs while the wafer is heated to the reflow temperature of the solder ball, flows from the polymer collar. The moat acts as a barrier to material flow, limiting the distance that the residual spreads while liquified. The residual from the polymer collar remains within a region () defined by the moat. A full-depth moat () extends completely through the polymer layer. Alternatively, a partial-depth moat ( and ) extends partially through the polymer layer.