DR. MICHAEL D JOHNSON, D.C.
Chiropractic at High St, Alameda, CA

License number
California 22018
Category
Chiropractic
Type
Chiropractor
Address
Address
1240 High St, Alameda, CA 94501
Phone
(510) 337-2767

Professional information

Michael Johnson Photo 1

Michael Johnson - Alameda, CA

Work:
BuiltNY.com
SEO & U/X Contractor
BuiltNY.com
SEO & U/X Contractor/Content Producer
BuiltNY.com
SEO and U/X Contractor/Site Producer
BlueRectangle.com
Founder/Owner/Operator
BlueRectangle.com - Medford, OR
SEO and U/X Contractor
Online Sales/Pacific Book Exchange, LLC - Alameda, CA
Founder, CEO
The Nose magazine - San Francisco, CA
Publisher
Face Ladder Productions - San Francisco, CA
Writer, producer, director of corporate marketing video productions
Education:
San Francisco State University
B.A. in Communication Arts


Michael D Johnson Photo 2

Michael D Johnson, Alameda CA

Specialties:
Chiropractor
Address:
1240 High St, Alameda, CA 94501


Michael D Johnson Photo 3

Dr. Michael D Johnson, Alameda CA - DC (Doctor of Chiropractic)

Specialties:
Chiropractic
Address:
1240 High St, Alameda 94501
(510) 337-2767 (Phone)
Languages:
English


Michael Johnson Photo 4

Solar Cell Having An Emitter Region With Wide Bandgap Semiconductor Material

US Patent:
2013024, Sep 26, 2013
Filed:
Mar 23, 2012
Appl. No.:
13/429138
Inventors:
Richard M. Swanson - Los Altos CA, US
Marius M. Bunea - Santa Clara CA, US
Michael C. Johnson - Alameda CA, US
David D. Smith - Campbell CA, US
Yu-Chen Shen - Sunnyvale CA, US
Peter J. Cousins - Menlo Park CA, US
Tim Dennis - Canton TX, US
International Classification:
H01L 31/0264, H01L 31/18
US Classification:
136252, 438 71, 257E3113
Abstract:
Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.