MICHAEL C. YANG, M.D.
Radiology at Pasteur Dr, Palo Alto, CA

2004015, Aug 12, 2004

Dec 24, 2003

10/746126

Bo Zheng - San Jose CA, US
Nicolay Kovarsky - Sunnyvale CA, US
You Wang - Cupertino CA, US
Toshiyuki Nakagawa - Chiba, JP
Terukazu Aitani - Chiba, JP
Koji Hara - Chiba, JP
Daxin Mao - Chiba, JP
Michael Yang - Palo Alto CA, US

C25D005/02, C25D005/10

205/118000, 205/170000, 205/182000

Embodiments of the invention generally include a method and intermediate plating solution for plating metal onto a substrate surface. The method generally includes filling the features and/or growing a film layer on the field areas by plating a metal from a first solution on a seed layer under an applied first current, wherein the first solution includes an acid in an amount sufficient to provide a first solution pH of about 6 or less, copper ions, and at least one suppressor. The method may further include substantially filling features by plating metal ions from a second solution onto the substrate under an applied second current to form a metal layer, wherein the second solution includes an acid in an amount sufficient to provide a second solution pH of from about 0.6 to about 3, copper ions, at least one suppressor and at least one accelerator and growing a film layer on the field areas by contacting the metal layer with a third solution under an applied third current, wherein the third solution includes an acid, copper ions, at least one suppressor, at least one accelerator and at least one leveling agent. The intermediate plating solution generally includes copper sulfate in a concentration of from about 5 g/L to about 50 g/L, sulfuric acid in a concentration sufficient to provide a pH of less than about 6 and suppressors having a molecular weight of 600 or greater.

2006026, Nov 30, 2006

Jun 21, 2006

11/425645

BO ZHENG - San Jose CA, US
NICOLAY KOVARSKY - Sunnyvale CA, US
YOU WANG - Cupertino CA, US
TOSHIYUKI NAKAGAWA - Chiba, JP
TERUKAZU AITANI - Chiba, JP
KOJI HARA - Chiba, JP
DAXIN MAO - Chiba, JP
MICHAEL YANG - Palo Alto CA, US

C25D 5/18

205102000

Embodiments of the invention generally include a method and intermediate plating solution for plating metal onto a substrate surface. The method generally includes filling the features and/or growing a film layer on the field areas by plating a metal from a first solution on a seed layer under an applied first current, wherein the first solution includes an acid in an amount sufficient to provide a first solution pH of about 6 or less, copper ions, and at least one suppressor. The method may further include substantially filling features by plating metal ions from a second solution onto the substrate under an applied second current to form a metal layer, wherein the second solution includes an acid in an amount sufficient to provide a second solution pH of from about 0.6 to about 3, copper ions, at least one suppressor and at least one accelerator and growing a film layer on the field areas by contacting the metal layer with a third solution under an applied third current, wherein the third solution includes an acid, copper ions, at least one suppressor, at least one accelerator and at least one leveling agent. The intermediate plating solution generally includes copper sulfate in a concentration of from about 5 g/L to about 50 g/L, sulfuric acid in a concentration sufficient to provide a pH of less than about 6 and suppressors having a molecular weight of 600 or greater.

2003001, Jan 30, 2003

Apr 26, 2002

10/134206

Vincent Ku - San Jose CA, US
Anzhong Chang - San Jose CA, US
Anh Nguyen - Milpitas CA, US
Ming Xi - Milpitas CA, US
Xiaoxiong Yuan - Cupertino CA, US
Juan Tuscano - Santa Clara CA, US
Lawrence Lei - Milpitas CA, US
Seshadri Ganguli - Sunnyvale CA, US
Michael Yang - Palo Alto CA, US
Chen-An Chen - Milpitas CA, US
Ling Chen - Sunnyvale CA, US

APPLIED MATERIALS, INC.

C23C016/00, C23F001/00, H01L021/306

118/715000, 156/345330, 156/345340, 427/248100, 427/255230

A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.

2004002, Feb 12, 2004

Feb 4, 2003

10/358781

Nicolay Kovarsky - Sunnyvale CA, US
Dmitry Lubomirsky - Sunnyvale CA, US
Anzhong Chang - San Jose CA, US
Yezdi Dordi - Palo Alto CA, US
Michael Yang - Palo Alto CA, US

Applied Materials, Inc

C25D017/00, C25D003/38

205/099000, 205/101000, 205/291000, 204/252000

Embodiments of the invention generally provide a method and apparatus for plating a metal on a substrate. The electrochemical plating system generally includes a plating cell having an anolyte compartment and a catholyte compartment, the anolyte compartment having an insoluble anode and an anolyte therein. The catholyte compartment generally includes a substrate support member and a catholyte therein. In addition, the plating cell generally includes an ion-exchange membrane disposed between the anolyte compartment and the catholyte compartment and a pump in fluid communication with the anolyte compartment, the pump configured to provide an anolyte to the anolyte compartment having a linear velocity of between about 0.5 cm/sec to about 50 cm/sec. The method generally includes supplying an anolyte solution to an anolyte compartment disposed in a plating cell having an anolyte compartment and a catholyte compartment. The anolyte solution generally passes through the anolyte compartment at a linear velocity of between about 0.5 cm/sec to about 50 cm/sec. The method further includes plating a metal onto the substrate with a catholyte solution disposed in a catholyte compartment of the plating cell, the catholyte compartment and the anolyte compartment separated by an ion-exchange membrane, removing used anolyte solution from the plating cell and passing at least a portion of the used anolyte solution through a correction device including at least one of copper oxide, copper hydroxide and combinations thereof.

7473638, Jan 6, 2009

Jul 20, 2006

11/458852

Michael X. Yang - Palo Alto CA, US
Toshio Itoh - Palo Alto CA, US
Ming Xi - Palo Alto CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/4763, H01L 21/44

438627, 438643, 438680, 438683

In one embodiment, a method for forming a metal-containing material on a substrate is provided which includes forming a metal containing barrier layer on a substrate by a plasma-enhanced cyclical vapor deposition process, exposing the substrate to a soak process, and depositing a conductive material on the substrate by a second vapor deposition process. The substrate may be exposed to a silicon-containing compound (e. g. , silane) during the soak process. In some examples, a metallic nitride layer may be deposited subsequent to the soak process and prior to the second vapor deposition process. In other examples, the metal containing barrier layer contains metallic titanium, the metallic nitride layer contains titanium nitride, and the conductive material contains tungsten or copper. The plasma-enhanced cyclical vapor deposition process may further include exposing the substrate to a nitrogen precursor, such as nitrogen, hydrogen, a nitrogen/hydrogen mixture, ammonia, hydrazine, or derivatives thereof.

2011018, Aug 4, 2011

Aug 10, 2010

12/853394

Michael X. Yang - Palo Alto CA, US

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA

B05C 11/00

118666

An improved method of heating a workpiece positioned on a susceptor is disclosed. The method using both primary heating, such as by resistive or inductive heating elements, and localized secondary heating, such as by heating lamps. The primary heating system is used to globally regulate the temperature of the susceptor. The heating lamps are used to provide localized heating to particular regions of the workpieces, based on measured temperatures. A wafer temperature mapping unit is used to measure the temperature of the top surface of the workpieces, so that an appropriate amount of heat can be applied to each localized region. In some embodiments, the susceptor rotates, thereby allowing fewer localized heating elements and temperature sensors to be employed.

7026238, Apr 11, 2006

Jan 17, 2002

10/052681

Ming Xi - Milpitas CA, US
Paul Frederick Smith - San Jose CA, US
Ling Chen - Sunnyvale CA, US
Michael X. Yang - Palo Alto CA, US
Mei Chang - Saratoga CA, US
Fusen Chen - Cupertino CA, US
Christophe Marcadal - Santa Clara CA, US
Jenny C. Lin - Saratoga CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/4763

438625, 438639, 438643, 438648

Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.

7201803, Apr 10, 2007

Dec 9, 2003

10/731651

Siqing Lu - San Jose CA, US
Yu Chang - San Jose CA, US
Dongxi Sun - Cupertino CA, US
Vinh Dang - San Jose CA, US
Michael X. Yang - Palo Alto CA, US
Anzhong (Andrew) Chang - San Jose CA, US
Anh N. Nguyen - Milpitas CA, US
Ming Xi - Milpitas CA, US

Applied Materials, Inc. - Santa Clara CA

B05C 11/00

118710

A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.

8123881, Feb 28, 2012

Oct 9, 2008

12/248204

Damon K. Cox - Round Rock TX, US
Todd J. Egan - Fremont CA, US
Michael X. Yang - Palo Alto CA, US
Jeffrey C. Hudgens - San Francisco CA, US

Applied Materials, Inc. - Santa Clara CA

B32B 37/00

156 64, 29721, 29739, 29740, 438107, 438108

A method, a system and a computer readable medium having a set of instructions stored thereon for die-to-robot alignment for die-to-substrate bonding are described. First, a robot is aligned with a substrate to provide a pre-aligned robot. Next, a die is aligned with the pre-aligned robot to provide a robot-aligned die. Finally, the robot-aligned die is bonded to a region of the substrate. The substrate is held stationary immediately following the aligning of the robot with the substrate and at least until the robot-aligned die is bonded to the region of the substrate.

7820026, Oct 26, 2010

Apr 13, 2006

11/403566

Hooman Hafezi - Redwood City CA, US
Aron Rosenfeld - Palo City CA, US
Michael X. Yang - Palo Alto CA, US

Applied Materials, Inc. - Santa Clara CA

C25D 5/34

205205, 205210

Generally, the process includes depositing a barrier layer on a feature formed in a dielectric layer, decorating the barrier layer with a metal, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier layer formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.