Michael A Wolfe
Architects in Portland, OR
License number
Oregon 1669
Issued Date
Jul 1, 1975
Expiration Date
Jun 30, 2013
Category
Architecture
Address
Address
Portland, OR 97218
Professional information
Principal At Michael Wolfe Architecture • Graphic Delineation
Position:
Principal at Michael Wolfe Architecture • Graphic Delineation
Location:
Portland, Oregon Area
Industry:
Architecture & Planning
Work:
Michael Wolfe Architecture • Graphic Delineation
since May 1994
-
Principal
Education:
University of Oregon 1972 - 1974
Masters of Architecture, Architecture University of Washington 1962 - 1967
Bachelor of Architecture, Architecture
Masters of Architecture, Architecture University of Washington 1962 - 1967
Bachelor of Architecture, Architecture
Ultraviolet Laser Ablative Patterning Of Microstructures In Semiconductors
US Patent:
7157038, Jan 2, 2007
Filed:
Dec 14, 2001
Appl. No.:
10/017497
Inventors:
Brian W. Baird - Oregon City OR, US
Michael J. Wolfe - Portland OR, US
Richard S. Harris - Portland OR, US
Kevin P. Fahey - Portland OR, US
Thomas R. McNeil - Beaverton OR, US
Michael J. Wolfe - Portland OR, US
Richard S. Harris - Portland OR, US
Kevin P. Fahey - Portland OR, US
Thomas R. McNeil - Beaverton OR, US
Assignee:
Electro Scientific Industries, Inc. - Portland OR
International Classification:
B23K 26/38
US Classification:
264400, 21912169, 21912171, 21912176, 21912182, 21912183, 21912185
Abstract:
Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, GaAs, indium phosphide, or single crystalline sapphire, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses () from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO, or Nd:YLF is directed to the workpiece () with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of semiconductors using this focused spot size is greater than 200 μJ per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz. The laser pulsewidth measured at the full width half-maximum points is preferably less than 80 ns.
Ultraviolet Laser Ablative Patterning Of Microstructures In Semiconductors
US Patent:
2006009, May 4, 2006
Filed:
Nov 15, 2005
Appl. No.:
11/280957
Inventors:
Brian Baird - Oregon City OR, US
Michael Wolfe - Portland OR, US
Richard Harris - Portland OR, US
Kevin Fahey - Portland OR, US
Thomas McNeil - Beaverton OR, US
Michael Wolfe - Portland OR, US
Richard Harris - Portland OR, US
Kevin Fahey - Portland OR, US
Thomas McNeil - Beaverton OR, US
International Classification:
B23K 26/38, B23K 26/067
US Classification:
219121720, 219121770, 219121710
Abstract:
Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, GaAs, indium phosphide, or single crystalline sapphire, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses () from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO, or Nd:YLF is directed to the workpiece () with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of semiconductors using this focused spot size is greater than 200 μJ per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz. The laser pulsewidth measured at the full width half-maximum points is preferably less than 80 ns.
Laser Segmented Cutting, Multi-Step Cutting, Or Both
US Patent:
RE43605, Aug 28, 2012
Filed:
Jan 9, 2009
Appl. No.:
12/351562
Inventors:
James N. O'Brien - Bend OR, US
Yunlong Sun - Beaverton OR, US
Kevin P. Fahey - Portland OR, US
Michael J. Wolfe - Portland OR, US
Brian W. Baird - Oregon City OR, US
Richard S. Harris - Portland OR, US
Yunlong Sun - Beaverton OR, US
Kevin P. Fahey - Portland OR, US
Michael J. Wolfe - Portland OR, US
Brian W. Baird - Oregon City OR, US
Richard S. Harris - Portland OR, US
Assignee:
Electro Scientific Industries, Inc. - Portland OR
International Classification:
B23K 26/04, C04B 41/91
US Classification:
264400, 264482, 21912162, 21912167, 21912169, 2191218, 21912181
Abstract:
UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path () into short segments (), from about 10 μm to 1 mm. The laser output () is scanned within a first short segment () for a predetermined number of passes before being moved to and scanned within a second short segment () for a predetermined number of passes. The bite size, segment size (), and segment overlap () can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path (112) where the cut is already completed. Polarization direction of the laser output () is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.
Laser Segmented Cutting, Multi-Step Cutting, Or Both
US Patent:
RE43400, May 22, 2012
Filed:
Jan 13, 2006
Appl. No.:
11/332815
Inventors:
James N. O'Brien - Bend OR, US
Yunlong Sun - Beaverton OR, US
Kevin P. Fahey - Portland OR, US
Michael J. Wolfe - Portland OR, US
Brian W. Baird - Oregon City OR, US
Richard S. Harris - Portland OR, US
Yunlong Sun - Beaverton OR, US
Kevin P. Fahey - Portland OR, US
Michael J. Wolfe - Portland OR, US
Brian W. Baird - Oregon City OR, US
Richard S. Harris - Portland OR, US
Assignee:
Electro Scientific Industries, Inc. - Portland OR
International Classification:
B23K 26/04, C04B 41/91
US Classification:
264400, 264482, 21912162, 21912167, 21912169, 2191218, 21912181
Abstract:
UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path () into short segments (), from about 10 μm to 1 mm. The laser output () is scanned within a first short segment () for a predetermined number of passes before being moved to and scanned within a second short segment () for a predetermined number of passes. The bite size, segment size (), and segment overlap () can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path (112) where the cut is already completed. Polarization direction of the laser output () is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.
Uv Laser Cutting Or Shape Modification Of Brittle, High Melting Temperature Target Materials Such As Ceramics Or Glasses
US Patent:
2002003, Mar 21, 2002
Filed:
Mar 9, 2001
Appl. No.:
09/803382
Inventors:
Kevin Fahey - Portland OR, US
Michael Wolfe - Portland OR, US
Michael Wolfe - Portland OR, US
International Classification:
B29C035/08
US Classification:
264/400000
Abstract:
A UV laser () cuts ceramics or glasses such as the alumina or ceramic of sliders (), and particularly separates rows () or sliders () or rounds edges (). A preferred process entails covering the surfaces of wafers (), rows (), or sliders () with a sacrificial layer; removing a portion of the sacrificial layer to create uncovered zones along existing edges or over intended edges; laser cutting wafers () into rows () or rows () into sliders (); laser rounding edges (and/or ), and/or corners (and/or ); cleaning debris from the uncovered zones; and removing the sacrificial layer. Although a preferred laser is a Q-switched, UV solid-state laser () providing imaged and/or shaped output at a bite size of between about 1 to 7 m, other lasers including excimers can be employed.
Laser Segmented Cutting
US Patent:
RE43487, Jun 26, 2012
Filed:
Jan 8, 2009
Appl. No.:
12/350767
Inventors:
James N. O'Brien - Bend OR, US
Yunlong Sun - Beaverton OR, US
Kevin P. Fahey - Portland OR, US
Michael J. Wolfe - Portland OR, US
Brian W. Baird - Oregon City OR, US
Richard S. Harris - Portland OR, US
Yunlong Sun - Beaverton OR, US
Kevin P. Fahey - Portland OR, US
Michael J. Wolfe - Portland OR, US
Brian W. Baird - Oregon City OR, US
Richard S. Harris - Portland OR, US
Assignee:
Electro Scientific Industries, Inc. - Portland OR
International Classification:
B23K 26/04, C04B 41/91
US Classification:
264400, 264482, 21912162, 21912167, 21912169, 2191218, 21912181
Abstract:
UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path () into short segments (), from about 10 μm to 1 mm. The laser output () is scanned within a first short segment () for a predetermined number of passes before being moved to and scanned within a second short segment () for a predetermined number of passes. The bite size, segment size (), and segment overlap () can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path (112) where the cut is already completed. Polarization direction of the laser output () is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.