MARVIN WAYNE COWENS
Pilots at Stoney Pt Dr, Plano, TX

6087192, Jul 11, 2000

Sep 2, 1999

9/388728

Marvin W. Cowens - Plano TX
Rodel M. Roderos - Baguio, PH

Texas Instruments Incorporated - Dallas TX

H01L 2166, G01R 3126

438 14

An embodiment of the instant invention is a method of making a semiconductor device situated within a package with conductive leads extending from the package, the method comprising the steps of: testing a plurality of the semiconductor devices so as to determine defective devices; and marking the defective devices with a polymer marker able to withstand temperatures in excess of 200 C. , acids with a pH of less than 2, and basic solutions with a pH of greater than 11. Preferably, the polymer marker is comprised of a surfactant, a solvent, a polymer backbone, and a dye, and may additionally include an adhesion promoter. The surfactant is, preferably, comprised of: SVC-15, isopropanol, and any combination thereof. The solvent is, preferably, comprised of a substance consisting of: ENSOLV, bromopropane, chloropropane, and C. sub. n H. sub. 2n+1 X (where X is a halogen and n is between 3 and 5), and any combination thereof.

6624944, Sep 23, 2003

Mar 26, 1997

08/824594

Robert M. Wallace - Richardson TX
Marvin W. Cowens - Plano TX
Steven A. Henck - Plano TX

Texas Instruments Incorporated - Dallas TX

G02B 110

359580, 359586, 359291, 359230, 359231

A protective cover ( ) for an optical device, such as a spatial light modulator or an infrared detector or receiver. The cover ( ) has an optically transmissive window ( ), which has a coating ( ) on one or both of its surfaces. The coating ( ) is made from a halogenated material, which is deposited to form a chemical bond with the surface of the window ( ).

6869831, Mar 22, 2005

Sep 14, 2001

09/952454

Marvin W. Cowens - Plano TX, US
Masood Murtuza - Sugarland TX, US
Vinu Yamunan - Dallas TX, US
Charles Odegard - McKinney TX, US
Phillip R. Coffman - Rowlett TX, US

Texas Instruments Incorporated - Dallas TX

H01L021/44, H01L021/48, H01L021/50

438127

A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

2010015, Jun 24, 2010

Dec 18, 2009

12/642445

Rajiv Carl Dunne - Murphy TX, US
Marvin Wayne Cowens - Plano TX, US
Mario Antonio Bolanos - Plano TX, US

H01L 21/78, H01L 21/60

438113, 438118, 257E21506, 257E21599

Various exemplary embodiments provide materials and methods for flip-chip packaging technology. The disclosed flip-chip packaging technology can use a single B-stage wafer-applied photo-sensitive adhesive along with printed interconnects, which does not include conventional underfill materials and processes. In one embodiment, a photo-sensitive adhesive can be applied on a semiconductor die or a base substrate with conductive bumps printed in through-openings of the photo-sensitive adhesive. One or more semiconductor dies can be laterally packaged or vertically stacked on the base substrate using the printed conductive bumps as interconnects there-between.

7271494, Sep 18, 2007

May 2, 2005

11/118196

Marvin W. Cowens - Plano TX, US
Masood Murtuza - Sugarland TX, US
Vinu Yamunan - Dallas TX, US
Charles Odegard - McKinney TX, US
Phillip R. Coffman - Rowlett TX, US

Texas Instruments Incorporated - Dallas TX

H01L 23/48, H01L 23/52, H01L 29/40

257778, 257E21503

A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

7276401, Oct 2, 2007

Oct 16, 2006

11/580751

Marvin W. Cowens - Plano TX, US
Masood Murtuza - Sugarland TX, US
Vinu Yamunan - Dallas TX, US
Charles Odegard - McKinney TX, US
Phillip R. Coffman - Rowlett TX, US

Texas Instruments Incorporated - Dallas TX

H01L 21/00

438127, 257E21503

A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

7319275, Jan 15, 2008

Feb 1, 2005

11/047519

Marvin W. Cowens - Plano TX, US
Masood Murtuza - Sugarland TX, US
Vinu Yamunan - Dallas TX, US
Charles Odegard - McKinney TX, US
Phillip R. Coffman - Rowlett TX, US

Texas Instruments Incorporated - Dallas TX

H01L 23/48, H01L 23/52, H01L 29/40

257778, 257E23127

A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

2008008, Apr 10, 2008

Nov 29, 2007

11/947584

Charles Odegard - McKinney TX, US
Marvin Cowens - Plano TX, US
Leon Stiborek - Dallas TX, US

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

H01L 21/56

438127000, 257E21503

Disclosed are methods for dispensing underfill material in an IC assembly having a die mounted on a substrate with a gap therebetween. One or more aperture is provided in the substrate for receiving underfill material into the gap. Underfill material is dispensed into the gap through the one or more apertures, thereby filling the gap with underfill material and providing a favorable flow rate and improved underfilling. Embodiments of the invention are disclosed in which capillary action, a vacuum, or positive pressure, are used to assist in the flow of the underfill material.

2009003, Feb 12, 2009

Aug 8, 2007

11/835909

Charles A. Odegard - McKinney TX, US
Richard W. Arnold - McKinney TX, US
Marvin W. Cowens - Plano TX, US

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

H01L 23/48, H01L 21/58

257777, 438109, 257E21505, 257E2301

Methods and apparatus to support an overhanging region of stacked die are disclosed. A disclosed method comprises bonding a first die onto a substrate, placing a support element on the substrate; and bonding a second die onto the first die, wherein the second die overhangs at least one edge of the first die and the support element is positioned to limit bending of the second die.

2013030, Nov 21, 2013

May 21, 2012

13/476158

Charles Anthony Odegard - McKinney TX, US
Marvin Wayne Cowens - Plano TX, US
Jaimal Mallory Williamson - McKinney TX, US

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

H01L 23/48, H01L 21/78

257737, 438113, 257E23021, 257E21599

A packaged semiconductor device () comprising a semiconductor chip () of an area having a first surface () including a plurality of bond pads () linearly arrayed, adjacent pads having a first pitch () center-to-center; an insulating layer () on the first chip surface covering the chip area, the layer having a height () and a second surface () parallel to the first surface; the second surface including contact nodes () in staggered array, the nodes having the same plurality as the pads, adjacent nodes having a second pitch () center-to-center greater than the first pitch; and metal wires through the layer height connecting the pads to respective nodes.