Mark W Miller
Nursing in Salt Lake City, UT

7772056, Aug 10, 2010

Jun 18, 2008

12/141473

Mark S. Miller - Salt Lake City UT, US
Justin B. Jackson - Salt Lake City UT, US
Divesh Kapoor - Salt Lake City UT, US
Justin Millis - Salt Lake City UT, US

University of Utah Research Foundation - Salt Lake City UT

H01L 29/80

438188, 438191, 257E21448

Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.

8253168, Aug 28, 2012

Jun 29, 2010

12/826480

Mark S. Miller - Salt Lake City UT, US
Justin B. Jackson - Salt Lake City UT, US
Divesh Kapoor - Salt Lake City UT, US
Justin Millis - Salt Lake City UT, US

University of Utah Research Foundation - Salt Lake City UT

H01L 29/808

257192, 257279, 257E21448, 438188, 438191

Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design.

2011016, Jul 14, 2011

Jan 7, 2011

12/986744

Mark S. Miller - Salt Lake City UT, US
Guillermo A. Oviedo Vela - Salt Lake City UT, US

UNIVERSITY OF UTAH - Salt Lake City UT

H01J 25/34, H05K 3/00

315 35, 216 13, 216 17, 216 18

A traveling wave device includes a slow wave circuit supported by a dielectric membrane. The dielectric membrane can have a thickness substantially smaller than a wavelength of operation of the traveling wave device.