MARK P MURRAY
Veterinary in Burlington, VT

6436814, Aug 20, 2002

Nov 21, 2000

09/718010

David V. Horak - Essex Junction VT
William A. Klaasen - Underhill VT
Thomas L. McDevitt - Underhill VT
Mark P. Murray - Burlington VT
Anthony K. Stamper - Williston VT

International Business Machines Corporation - Armonk NY

H01L 214763

438637, 438618, 438639, 438687

An interconnection structure preferably including one or more conductors that have a central region filled with an insulator, and a method of fabricating such an interconnection structure for preferably making an electrical connection to the conductor(s). The method preferably includes the steps of depositing and patterning a first insulator over a substrate to form an aperture opening to the substrate; depositing and polishing a first conductor to leave the first conductor in the aperture; depositing and patterning a second insulator to form an opening through the second insulator and a recess in the aperture; depositing one or more second conductors to line the opening and the recess, and to form a central region of the interconnection structure; depositing a third insulator to at least partially fill the central region; and making an electrical connection to the second conductor(s).

6674168, Jan 6, 2004

Jan 21, 2003

10/248452

Robert M Geffken - Burlington VT
Vincent J McGahay - Poughkeepsie NY
William T. Motsiff - Essex Junction VT
Mark P. Murray - Burlington VT
Amanda L. Piper - Wappingers Falls NY
Anthony K. Stamper - Williston VT
David C. Thomas - Richmond VT
Christy S. Tyberg - Croton-On-Hudson NY
Elizabeth T. Webster - Richmond VT

International Business Machines Corporation - Armonk NY

H01L 2100

257758, 257752, 257759, 257760, 257762, 438 4

A method of reworking BEOL (back end of a processing line) metallization levels of damascene metallurgy comprises forming a plurality of BEOL metallization levels over a substrate, forming line and via portions in the BEOL metallization levels, selectively removing at least one of the BEOL metallization levels to expose the line and via portions, and replacing the removed BEOL metallization levels with at least one new BEOL metallization level, wherein the BEOL metallization levels comprise a first dielectric layer and a second dielectric layer, and wherein the first dielectric layer comprising a lower dielectric constant material than the second dielectric layer.

6653737, Nov 25, 2003

May 31, 2002

10/159181

David V. Horak - Essex Junction VT
William A. Klaasen - Underhill VT
Thomas L. McDevitt - Underhill VT
Mark P. Murray - Burlington VT
Anthony K. Stamper - Williston VT

International Business Machines Corporation - Armonk NY

H01L 214763

257762, 257769, 257513, 257522, 438622, 438240, 438639

An interconnection structure preferably including one or more conductors that have a central region filled with an insulator, and a method of fabricating such an interconnection structure for preferably making an electrical connection to the conductor(s). The method preferably includes the steps of depositing and patterning a first insulator over a substrate to form an aperture opening to the substrate; depositing and polishing a first conductor to leave the first conductor in the aperture; depositing and patterning a second insulator to form an opening through the second insulator and a recess in the aperture; depositing one or more second conductors to line the opening and the recess, and to form a central region of the interconnection structure; depositing a third insulator to at least partially fill the central region; and making an electrical connection to the second conductor(s).

6426558, Jul 30, 2002

May 14, 2001

09/854890

Jonathan Chapple-Sokol - Essex Junction VT
Paul M. Feeney - Aurora IL
Robert M. Geffken - Burlington VT
David V. Horak - Essex Junction VT
Mark P. Murray - Burlington VT
Anthony K. Stamper - Williston VT

International Business Machines Corporation - Armonk NY

H01L 2348

257758, 257759

A method and structure is described which improves the manufacturability of integrated circuit interconnect and stud contacts in contact with semiconductor substrates and upper levels of metallization. The monolithic structure is formed from a thick layer of refractory metal. A variation in the monolithic structure is in the use of a dual damascene local interconnect portion of the structure which allows the local interconnect to pass over structures previously formed on the substrate.

2004024, Dec 9, 2004

Jun 6, 2003

10/250147

Edward Cooney - Jericho VT, US
Robert Geffken - Burlington VT, US
Vincent McGahay - Poughkeepsie NY, US
William Motsiff - Essex Junction VT, US
Mark Murray - Burlington VT, US
Amanda Piper - Poughkeepsie NY, US
Anthony Stamper - Williston VT, US
David Thomas - Richmond VT, US
Elizabeth Webster - Burlington VT, US

International Business Machines Corporation - Armonk NY

H01L021/311

257/758000

A method and structure for semiconductor structure includes a plurality of adjacent wiring levels, conductors within each of the wiring levels, and liners at least partially surrounding each of the conductors. The liners of adjacent wiring levels are made of different materials which have different etching characteristics and are selectively etchable with respect to one another. The liners can be tantalum, tungsten, etc. The liners surround at least three sides of the conductors. Each of the wiring levels has a first insulator layer which has a first dielectric material. The liners and the conductors are positioned within the first dielectric material. A second insulator layer has a second dielectric material over the first insulator layer. The first dielectric material has a lower dielectric constant than the second dielectric material. The first dielectric material can be silicon dioxide, fluorinated silicon dioxide (FSD), microporous glasses, etc. The second dielectric material can be one of nitrides, oxides, tantalum, tungsten, etc.

7052625, May 30, 2006

Mar 28, 2001

09/819787

Timothy Scott Chamberlin - Fairfax VT, US
Michael J. MacDonald - Yorktown Heights NY, US
Mark P. Murray - Burlington VT, US

International Business Machines Corporation - Armonk NY

B44C 1/22

216 88, 216 89, 438693, 252 791, 252 794

A slurry containing abrasive particles, an oxidizing agent having a low static etch rate on at least one acid or salt metal, and having a pH of about 5 to about 11 is especially useful for polishing surfaces, including both metal and silicon dioxide, such as present in microelectronics, at the same or substantially the same polishing rates.

6982227, Jan 3, 2006

Oct 16, 2003

10/687294

Robert M. Geffken - Burlington VT, US
Vincent J. McGahay - Poughkeepsie NY, US
William T. Motsiff - Essex Junction VT, US
Mark P. Murray - Burlington VT, US
Amanda L. Piper - Wappingers Falls NY, US
Anthony K. Stamper - Williston VT, US
David C. Thomas - Richmond VT, US
Christy S. Tyberg - East Mohopac NY, US
Elizabeth T. Webster - Richmond VT, US

International Business Machines Corporation - Armonk NY

H01L 21/302

438706, 438723

A method of reworking BEOL (back end of a processing line) metallization levels of damascene metallurgy comprises forming a plurality of BEOL metallization levels over a substrate, forming line and via portions in the BEOL metallization levels, selectively removing at least one of the BEOL metallization levels to expose the line and via portions, and replacing the removed BEOL metallization levels with at least one new BEOL metallization level, wherein the BEOL metallization levels comprise a first dielectric layer and a second dielectric layer, and wherein the first dielectric layer comprising a lower dielectric constant material than the second dielectric layer.

2005010, May 19, 2005

Nov 1, 2004

10/904262

Timothy Chamberlain - Fairfax VT, US
Michael MacDonald - Yorktown Heights NY, US
Mark Murray - Burlington VT, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

C23F001/00, H01L021/302, H01L021/461

216002000

A slurry containing abrasive particles, an oxidizing agent having a low static etch rate on at least one acid or salt metal, and having a pH of about 5 to about 11 is especially useful for polishing surfaces, including both metal and silicon dioxide, such as present in microelectronics, at the same or substantially the same polishing rates.