MR. MARK JAMES BUEHLER, MD
Medical Practice at Hoyt, Portland, OR

6746498, Jun 8, 2004

Dec 12, 2002

10/319256

Mark F. Buehler - Portland OR

Intel Corporation - Santa Clara CA

B24B 100

51308, 438691, 438692, 438693, 106 3

A composition is described that comprises an abrasive, and a hydrocarbon containing component that is coupled to the abrasive. Such a composition may be included in a slurry that is used to polish a substrate, when forming a semiconductor device. Also described is a method for modifying a surface of an abrasive that comprises coupling a hydrocarbon containing component to the surface of the abrasive.

2007022, Oct 4, 2007

Mar 31, 2006

11/396012

Mark Buehler - Portland OR, US
Mandyam Sriram - Beaverton OR, US
Danilo Castillo-Mejia - Hillsboro OR, US
Tatyana Andryushchenko - Portland OR, US

B44C 1/22, C09K 13/00, C03C 15/00

216083000, 216088000, 216089000, 216100000, 252079100

A chemical composition and methods to remove defects while maintaining corrosion protection of conductors on a substrate are described. The composition includes a conductive solution, a corrosion inhibitor; and a surfactant. A surfactant-to-inhibitor ratio in the composition is a function of a metal. The surfactant is an anionic surfactant, a non-ionic surfactant, or any combination thereof. The concentration of the corrosion inhibitor in the chemical composition can be low. The corrosion inhibitor can form soft bonds with a conductor material. The conductive solution can be a high ionic strength solution. The composition is applied to a wafer having conductors on a substrate. At least two conductors on the substrate have different potentials. The composition can be used to clean the wafer after forming the conductors on the substrate. The composition can be used for chemical mechanical polishing of the wafer.

2002002, Feb 28, 2002

Aug 17, 1999

09/375613

JOHANES H. SUKAMTO - RICHLAND WA, US
MARK F. BUEHLER - PORTLAND OR, US
SCOT D. RASSAT - BENTON CITY WA, US
RICK J. ORTH - KENNEWICK WA, US
MICHAEL A. LILGA - RICHLAND WA, US
RICHARD T. HALLEN - RICHLAND WA, US

B32B009/00, C25D005/18, C25B009/08, C25B009/04

428/689000, 205/316000, 205/106000, 205/108000, 205/334000, 205/198000

The electroactive product of the present invention is a metal cyanide film on a substrate, wherein the improvement is the metal cyanide film having a flux throughput capacity greater than 0.54 millicoulombs/second-cmas measured by the specific cyclic voltammetry procedure. The improved metal cyanide film generally has a flux throughput capacity greater than that of unimproved metal cyanide film wherein the improved metal cyanide film was deposited at a slow rate. The present invention enjoys the advantages of greater cation equivalent loading capacity, and achieving ion separations using half the amount of electricity as other electrochemical ion separations.

2008015, Jun 26, 2008

Dec 21, 2006

11/644254

Mark Buehler - Portland OR, US

H01L 21/306, C11D 7/00

510175, 15634551

A clean chemistry composition includes an organic acid and a polar surfactant. The clean chemistry composition is capable of imparting an electrical charge to particles generated during a CMP operation on a wafer made up of semiconductors having a metal gate structure. The imparted electrical charge has the same polarity as that of an electrical charge on the wafer surface, such that the resulting repulsive force between the wafer surface and the newly-charged particles is sufficient to repel the particles from the wafer surface.

2002000, Jan 10, 2002

Sep 10, 1998

09/151370

KENNETH C. CADIEN - PORTLAND OR, US
ALLEN D. FELLER - PORTLAND OR, US
MARK BUEHLER - PORTLAND OR, US
PAUL FISCHER - HILLSBORO OR, US

H01L021/31

438/788000

A ceria based abrasive is used in a chemical mechanical polishing operation at low polish pressure, and a predetermined pH range, to achieve high polish rates and good uniformity when planarizing layers formed from low dielectric constant materials, including but not limited to polymers. The distribution of ceria particle sizes in an exemplary slurry is bimodal and controlled. In a particular embodiment a polishing abrasive containing a controlled distribution of ceria particle sizes is used in a CMP polisher apparatus with a polishing pressure of approximately 3 psi and a pH of approximately 10.6 to planarize polymer films.

6918819, Jul 19, 2005

May 6, 2003

10/429989

Mark F. Buehler - Portland OR, US

Intel Corporation - Santa Clara CA

B24B001/00

451 36, 451 41, 451 54

A method of removing at least one particle from a substrate is disclosed comprising polishing a metallized layer over the substrate using a slurry to remove a portion of the metallized layer and polishing the substrate using the slurry to remove a portion of a barrier between the metallized layer and the substrate. The method further includes introducing deionized water onto the substrate and introducing a solution comprising a weak acid selected from the group consisting of acetic acid, citric acid, gluconic acid, glucuronic acid, oxalic acid, and tartaric acid.

2007015, Jul 5, 2007

Dec 30, 2005

11/322885

Mark Buehler - Portland OR, US
Anne Miller - Portland OR, US
Tatyana Andryushchenko - Portland OR, US

H01L 21/8242, H01L 21/461

257295000, 438585000, 438633000, 438692000, 438240000, 438591000, 438785000, 257382000

A method for reducing the dissolution of aluminum gate electrodes in a high pH clean chemistry comprises modifying the high pH clean chemistry to include a silanol-based chemical. The silanol-based chemical causes a protective layer to form on a top surface of the aluminum gate electrode. The protective layer substantially reduces or prevents corrosion that occurs due to the high pH level of the clean chemistry. The protective layer is formed by the silanol-based chemical bonding to the aluminum gate electrode through a hydrolysis reaction, thereby forming a silanol-based protective layer.