LYUDMILA STONE
Broker in South Lynnfield, MA

2012020, Aug 9, 2012

Feb 7, 2011

13/021838

Julian Blake - Gloucester MA, US
Dale K. Stone - Lynnfield MA, US
Lyudmila Stone - Lynnfield MA, US
David Suuronen - Newburyport MA, US
Shigeo Oshiro - Gloucester MA, US

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA

H05F 3/02

361212

An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.

2009012, May 14, 2009

Nov 12, 2008

12/269394

D. Jeffrey Lischer - Acton MA, US
Dale K. Stone - Lynnfield MA, US
Lyudmila Stone - Lynnfield MA, US
David Suuronen - Newburyport MA, US
Julian G. Blake - Gloucester MA, US

VARIAN SEMICONDUCTOR EPUIPMENT ASSOCIATED, INC. - Gloucester MA

H01L 21/683

361234

An electrostatic chuck includes a layer having a plurality of protrusions to support a workpiece, wherein at least a portion of the layer has a first plurality of the plurality of protrusions. The first plurality of protrusions is spaced to geometrically form a pattern of hexagons. The first plurality of protrusions may be spaced an equal distance from adjacent protrusions and the equal distance may be about 4.0 millimeters from a center of one protrusion to a center of another protrusion. The present disclosure reduces peak mechanical stress levels conventionally present along an edge of each protrusion. Reducing such mechanical stress levels helps reduce backside damage to a supported workpiece, which in turn can reduce the generation of unwanted particles caused by such damage.

2009017, Jul 16, 2009

Jan 14, 2009

12/353642

Lyudmila Stone - Lynnfield MA, US
Julian G. Blake - Gloucester MA, US
Dale K. Stone - Lynnfield MA, US
Ron S. Serisky - Melrose MA, US

VARIAN SEMICONDUCTOR EQUPIMENT ASSOCIATE, INC. - Gloucester MA

H01J 27/00, G21K 1/00, H01J 49/00

250423 R, 250424, 2505051, 250281

This device has a liner disposed on a face in a vacuum chamber. A component in the vacuum chamber defines the face. The liner is configured to protect the workpiece from contamination or to prevent blistering of the face caused by implantation of atoms or ions into the face. The liner may be disposable and removed from the face in the vacuum chamber and replaced with a new liner in some embodiments. This liner may be a polymer with a roughened surface, be carbon-based, or be composed of carbon nanotubes in some embodiments.

7205556, Apr 17, 2007

Oct 1, 2004

10/956817

Lyudmila Stone - Lynnfield MA, US
Scott T. Barusso - Gloucester MA, US
Dale K. Stone - Lynnfield MA, US
Alexander S. Perel - Danvers MA, US

Axcelis Technologies, Inc. - Beverly MA

H01J 37/317

25049221

An ion beam implanter includes ion beam forming and directing apparatus and an implantation station where workpieces are implanted with ions from an ion beam. The beam travels along an evacuated path from an ion source to the implantation station. A flexible bellows couples the implantation station to the beam forming and directing apparatus permitting the implantation station to be pivoted with respect to the beam forming and directing apparatus and thereby change an implantation orientation of the workpieces with respect to the ion beam. A replaceable, flexible bellows liner is disposed within an interior region of the bellows to reduce the volume of implantation byproducts deposited on an interior surface of the bellows.

2013015, Jun 20, 2013

Sep 8, 2011

13/818339

David Suuronen - Newburyport MA, US
Lyudmila Stone - Lynnfield MA, US
Julian Blake - Gloucester MA, US
Dale K. Stone - Lynnfield MA, US
Richard A. Cooke - Framingham MA, US
Steven Donnell - Burlington MA, US
Chandra Venkatraman - Tyngsboro MA, US

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA
ENTEGRIS, INC. - Billerica MA

H02N 13/00

361234

In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 10to about 10ohms per square.

2013007, Mar 21, 2013

May 24, 2011

13/699279

Richard A. Cooke - Framingham MA, US
Dale K. Stone - Lynnfield MA, US
Lyudmila Stone - Lynnfield MA, US
Julian Blake - Gloucester MA, US
David Suuronen - Newburyport MA, US

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA
ENTEGRIS, INC. - Billerica MA

H02N 13/00, C23F 1/00, B05D 5/12

361234, 427 58, 427535, 216 20

In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a charge control layer comprising a surface resistivity of greater than about 10ohms per square.

7715170, May 11, 2010

Mar 26, 2007

11/690950

Julian G. Blake - Gloucester MA, US
Dale K. Stone - Lynnfield MA, US
Lyudmila Stone - Lynnfield MA, US
David Suuronen - Newburyport MA, US

Varian Semiconductor Equipment Associates, Inc. - Glouster MA

H01L 21/683, H01T 23/00

361234

Electrostatic clamping devices and methods for reducing contamination to a workpiece coupled to an electrostatic clamping device are disclosed. According to an embodiment an electrostatic clamping device for coupling a workpiece comprises: an embossment portion on a surface of a body to contact the workpiece; and at least two electrodes within the body; wherein the two electrodes are separated by a separation portion below the embossment portion.

2013003, Feb 14, 2013

Aug 17, 2012

13/588820

David Suuronen - Newburyport MA, US
Frederick B. Ammon - Essex MA, US
David Burgdorf - Rockport MA, US
Lyudmila Stone - Lynnfield MA, US

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA

B08B 7/00

134 6

A method for cleaning a workpiece support that includes using a workpiece that has been coated on its bottom surface with a suitable material is disclosed. This specially coated workpiece is placed on the support, and some time later, it is removed, taking with it particles from the support. In certain embodiments, the workpiece undergoes an ion implantation process to increase its temperature, and to increase the tackiness of the coating on the bottom surface. The material used to coat the bottom can be of variable types, including photoresists, oxides and deposited glasses.

8268081, Sep 18, 2012

Oct 2, 2008

12/243980

David Suuronen - Newburyport MA, US
Frederick B. Ammon - Essex MA, US
David Burgdorf - Rockport MA, US
Lyudmila Stone - Lynnfield MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

B08B 3/04

134 1, 134 6, 134 8, 438905, 427523

A method for cleaning a workpiece support that includes using a workpiece that has been coated on its bottom surface with a suitable material is disclosed. This specially coated workpiece is placed on the support, and some time later, it is removed, taking with it particles from the support. In certain embodiments, the workpiece undergoes an ion implantation process to increase its temperature, and to increase the tackiness of the coating on the bottom surface. The material used to coat the bottom can be of variable types, including photoresists, oxides and deposited glasses.

7381969, Jun 3, 2008

Apr 24, 2006

11/409759

Tariq Fasheh - Beverly MA, US
James Carroll - Amesbury MA, US
Klaus Petry - Merrimack MA, US
Dale Stone - Lynnfield MA, US
Lyudmila Stone - Lynnfield MA, US
Dave Wiederspahn - Cambridge MA, US

Axcelis Technologies, Inc. - Beverly MA

H01J 37/18

25044111, 73724, 414217, 414939, 118719, 20429825, 20429835

A control for pressurizing a load lock. The control initiates pressurization of the loadlock interior by coupling a source of gas to the loadlock interior. A representative load lock includes a pressure sensor and multiple valves to atmosphere where at least one such valves is a passthrough valve for removal of and insertion of workpieces from and into a load lock interior. A second fast acting valve also opens to atmosphere. A pressure rise inside the loadlock interior is monitored and when the pressure reaches a threshold pressure above atmosphere the fast acting valve is opened to atmosphere. This second fast acting valve is configured to relieve overpressure from the passthrough valve prior to opening of said passthrough valve. Workpiece movement is accomplished with the aid of a robot which reaches into the loadlock interior as it is either depositing workpieces or retrieving them. This system and process minimizes particle contamination of the load lock interior as well as contamination in the region outside the loadlock near the passthrough valve and any scheduled workpieces.