Inventors:
Ma. Fatimo Seijo - Hayward CA, US
David Bernhard - Kooskia ID, US
Long Nguyen - San Jose CA, US
Assignee:
ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT
International Classification:
C11D 3/30, C11D 3/32, C11D 3/33
Abstract:
A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.