Inventors:
Richard A. Hogle - Oceanside CA, US
Patrick Joseph Helly - Valley Center CA, US
Ce Ma - Apex NC, US
Laura Joy Miller - San Diego CA, US
Assignee:
The BOC Group, Inc. - Murray Hill NJ
International Classification:
H01L021/44
Abstract:
The use of a polyhedral oligomeric silsesquioxane compound and linking agent to form an ultra low-k dielectric film on semiconductor or integrated circuit surfaces is disclosed. The reaction between the polyhedral oligomeric silsesquioxane compound and linking agent is done in a chemical vapor deposition chamber.