Kevin Sean Matocha
Engineering at Bouton Rd, Troy, NY

2003008, May 1, 2003

Oct 23, 2002

10/277940

Kevin Matocha - Troy NY, US
Jeffrey Fedison - Niskayuna NY, US
James Kretchmer - Ballston Spa NY, US
Dale Brown - Schenectady NY, US
Peter Sandvik - Guilderland NY, US

G01J005/02

250/339150

A flame sensor for combustion flame temperature determination, comprising a first photodiode formed with elongated extending digits, and having a range of optical responsivity within an OH band for producing a first output signal; and a second photodiode formed with for receiving light from a combustion flame and having a range of optical responsivity in a different and overlapping portion of the OH band than the first photodiode device OH band for producing a second output signal; wherein the elongated extensions are positioned with parallel interdigitated longitudinal axis with respect to one another. An optical spectrometer comprises the sensor and a system comprises the sensor. A method for combustion flame temperature determination comprises obtaining a first photodiode signal using a first photodiode device comprising a silicon carbide photodiode with elongated extending digits and having a range of optical responsivity within an OH band; obtaining a second photodiode signal by using a second photodiode device comprising a silicon carbide photodiode with elongated extending digits interdigitated with the elongated extending digits of the first photodiode and a filter, the second photodiode device having a range of optical responsivity in a different and overlapping portion of the OH band than the first photodiode device; and obtaining a ratio using the first and second photodiode signals and using the ratio to determine the combustion flame temperature. A method of fabricating a flame sensor for combustion flame temperature determination, comprises forming a first photodiode with elongated extending digits and having a range of optical responsivity within an OH band for producing a first output signal; forming a second photodiode with elongated extending digits and having a range of optical responsivity in a different and overlapping portion of the OH band than the first photodiode device OH band for producing a second output signal; and positioning the elongated digits of the first photodiode and the second photodiode with parallel interdigitated longitudinal axis with respect to one another.

6838741, Jan 4, 2005

Dec 10, 2002

10/314986

Peter M. Sandvik - Guilderland NY, US
Dale M. Brown - Schenectady NY, US
Stephen D. Arthur - Glenville NY, US
Kevin S. Matocha - Troy NY, US
James W. Kretchmer - Ballston Spa NY, US

General Electtric Company - Niskayuna NY

H01L 31107, H01L 3106

257438, 257446, 257463, 257464, 438 48, 438 72, 438 87, 438636

An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 150° C. Another aspect of the present invention is directed to an APD device fabricated using SiC materials. Another aspect of the present invention is directed to an APD device fabricated using GaN materials. According to an embodiment of the present invention, an avalanche photodiode for detecting ultraviolet photons comprises a substrate having a first dopant; a first layer having the first dopant, positioned on top of the substrate; a second layer having a second dopant, positioned on top of the first layer; a third layer having a second dopant, positioned on top of the second layer; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned on top of the third layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the third layer; wherein the avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape; and wherein the avalanche photodiode operates in an environment comprising a temperature approximately equal to 150 degrees Celsius.

7002156, Feb 21, 2006

Nov 19, 2004

10/994980

Peter M. Sandvik - Guilderland NY, US
Dale M. Brown - Schenectady NY, US
Stephen D. Arthur - Glenville NY, US
Kevin S. Matocha - Troy NY, US
James W. Kretchmer - Ballston Spa NY, US

General Electric Company - Niskayuna NY

G01J 1/24

25037011, 25037001, 25037014, 257438, 257446, 257463, 257464

A detection system for detecting gamma rays including a scintillator crystal for receiving at least one gamma ray and generating at least one ultraviolet ray and an avalanche photodiode for detecting the ultraviolet ray. The avalanche photodiode includes: a substrate having a first dopant; a first layer having a second dopant, positioned on top of the substrate; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned above of the first layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the first layer. The avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape.

2004020, Oct 14, 2004

Apr 14, 2003

10/412215

Dale Brown - Schenectady NY, US
Kevin Matocha - Troy NY, US
Peter Sandvik - Guilderland NY, US
Leo Lombardo - Lyndhurst OH, US

G01J001/00

250/372000

An ultraviolet sensor monitors an effectiveness of ultraviolet lamps used in sterilization systems. The sensor includes an ultraviolet photodetector and a filter cooperating therewith configured for detecting light at wavelengths between 200-300 nm. A purification system for air or water utilizes the sensor in conjunction with an ultraviolet lamp directing ultraviolet light toward the air or water.