DR. KEVIN GORDON JACKSON, M.D.
Osteopathic Medicine at Thomas Rd, Scottsdale, AZ
License number
Arizona 22105
Category
Osteopathic Medicine
Type
Geriatric Medicine
Address
Address
8111 E Thomas Rd STE 124, Scottsdale, AZ 85251
Phone
(602) 954-0444
(602) 952-7146 (Fax)
(602) 952-7146 (Fax)
Personal information
See more information about KEVIN GORDON JACKSON at radaris.comName
Address
Phone
4493 E Sundance Ct, Gilbert, AZ 85297
Professional information
Kevin Jackson
Position:
Project Administrator at Vanguard
Location:
Phoenix, Arizona Area
Industry:
Financial Services
Work:
Vanguard
- Scottsdale, AZ since Aug 2011
-
Project Administrator
Education:
Northern Arizona University 2004 - 2008
Kevin Gordon Jackson, Scottsdale AZ
Specialties:
Family Physician
Address:
8111 E Thomas Rd, Scottsdale, AZ 85251
Education:
Queen's School of Medicine - Doctor of Medicine
Board certifications:
American Board of Family Medicine Certification in Family Medicine, American Board of Family Medicine Sub-certificate in Geriatric Medicine (Family Medicine), American Board of Family Medicine Sub-certificate in Hospice and Palliative Medicine (Family Medicine)
Dr. Kevin G Jackson, Scottsdale AZ - MD (Doctor of Medicine)
Specialties:
Geriatric Medicine, Hospice & Palliative Medicine
Address:
Geriatric Solutions LLC
8111 E Thomas Rd SUITE 124, Scottsdale 85251
(602) 954-0444 (Phone)
8111 E Thomas Rd SUITE 124, Scottsdale 85251
(602) 954-0444 (Phone)
Certifications:
Family Practice, 2011, Geriatric Medicine, 1998, Hospice Care and Palliative Medicine, 2012
Awards:
Healthgrades Honor Roll
Languages:
English
Hospitals:
Geriatric Solutions LLC
8111 E Thomas Rd SUITE 124, Scottsdale 85251
Maricopa Medical Center
2601 East Roosevelt St, Phoenix 85008
8111 E Thomas Rd SUITE 124, Scottsdale 85251
Maricopa Medical Center
2601 East Roosevelt St, Phoenix 85008
Education:
Medical School
Queens U Of Kingston On
University Mo Ks City School Of Med
Queens U Of Kingston On
University Mo Ks City School Of Med
Monolithic Temperature Compensated Voltage-Reference Diode And Method Of Its Manufacture
US Patent:
4870467, Sep 26, 1989
Filed:
Aug 6, 1985
Appl. No.:
6/752751
Inventors:
Bernard W. Boland - Scottsdale AZ
William E. Gandy - Phoenix AZ
Kevin B. Jackson - Scottsdale AZ
William E. Gandy - Phoenix AZ
Kevin B. Jackson - Scottsdale AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2990, H01L 2966, H01L 2900
US Classification:
357 13
Abstract:
An improved monolithic, temperature compensated voltage-reference diode is realized by creating a tub of epitaxial semiconductor material in a substrate of opposite conductivity type and creating a voltage reference junction at a surface of the tub. The junction between the tub and the substrate forms the forward-biased, temperature compensating junction of the device. The dopant concentration is varied during growth of the epitaxial material to provide a relatively low resistivity at the voltage-reference junction and a higher resistivity at the temperature compensating junction. The method described offers significant improvement over prior methods of manufacturing such devices in the area of cost and reliability.
Monolithic Temperature Compensated Voltage-Reference Diode And Method For Its Manufacture
US Patent:
4886762, Dec 12, 1989
Filed:
Jul 3, 1989
Appl. No.:
7/375236
Inventors:
Bernard W. Boland - Scottsdale AZ
William E. Gandy - Phoenix AZ
Kevin B Jackson - Scottsdale AZ
William E. Gandy - Phoenix AZ
Kevin B Jackson - Scottsdale AZ
Assignee:
Motorola Inc. - Schamuburg IL
International Classification:
H01L 300, H01L 500, H01L 2990
US Classification:
437 15
Abstract:
An improved monolithic, temperature compensated voltage- reference diode is realized by creating a tub of epitaxial semiconductor material in a substrate of opposite conductivity type and creating a voltage reference junction at a surface of the tub. The junction between the tub and the substrate forms the forward-biased, temperature compensating junction of the device. The dopant concentration is varied during growth of the epitaxial material to provide a relatively low resistivity at the voltage-reference junction and a higher resistivity at the temperature compensating junction. The method described offers significant improvement over prior methods of manufacturing such devices in the area of cost and reliability.