KENNETH P QUINLAN
Broker in Newton, MA

4504329, Mar 12, 1985

Oct 6, 1983

6/539603

Kenneth P. Quinlan - Newton MA
Thomas E. Erstfeld - Bedford MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

H01L 21205, H01L 21365

148175

The present invention provides for the deposition of group III-V ternary epitaxial films onto the surfaces of suitable semiconductor substrates. The deposition is accomplished by a vapor phase epitaxy-hydride technique using a group III binary alloy as a group III metal source and phosphine, arsine or stibine as a group V hydride source.

4720627, Jan 19, 1988

Nov 3, 1986

6/925954

Kenneth P. Quinlan - Newton MA

United States of America as represented by the Secretary of the Air Force - Washington DC

H01L 2356

250211J

A photodetector using a modified gate controlled diode has therein a layer of photoactive material. Photons interacting therein cause the formation of free protons which alter the electrical characteristics of the photodetector. The change in electrical characteristics is measureable and related to the intensity of photons received.

4191561, Mar 4, 1980

Dec 12, 1978

5/968874

Kenneth P. Quinlan - Newton MA
Joseph J. Hutta - Groton MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

C23F 102

75101R

A process for the production of trialuminum nickelide fibers which involves the utilization of an oxalic acid-hydrogen chloride mixture for separating the fibers from a solid, two-phase, composite matrix of aluminum and trialuminum nickelide fibers.

4792836, Dec 20, 1988

Dec 1, 1986

6/936195

Kenneth P. Quinlan - Newton MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

H01L 2714, H01L 3100, H01L 2702

357 30

A photodetector using a modified ion-sensitive field effect transistor has therein a layer of photoactive material. Upon exposure to a beam of light the photoactive material produces a charge-separation (with proton movement) therein which affects the drain current. The change in gate voltage to stabilizes the drain current is a measure of the intensity of the light input.

4888303, Dec 19, 1989

Nov 9, 1988

7/269225

Kenneth P. Quinlan - Newton MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

H01L 2120

437 81

A continouous process of forming an epitaxial layer of InGaAs using a vapor phase epitaxial-hydride technique having a pressure controlled source of hydrogen chloride gas to maintain a partial pressure of the gas as a function of time as the amount of gallium is depleted from the alloy source melt of Ga/In during the growth of the epitaxial layer.

4488914, Dec 18, 1984

Oct 29, 1982

6/437655

Kenneth P. Quinlan - Newton MA
Thomas E. Erstfeld - Bedford MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

H01L 21205, H01L 21322

148175

A process for depositing an epitaxial film of a III-V compound onto the surface of a crystallographically compatible substrate which includes contacting said substrate with a vaporous mixture of a group III element and a group V element to effect the deposition of a group III-V compound thereon while simultaneously introducing a flow of hydrogen halide gas during deposition of the group III-V compound.

4161434, Jul 17, 1979

Oct 12, 1978

5/950658

Kenneth P. Quinlan - Newton MA
Joseph J. Hutta - Groton MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

C25F 500, C25F 300, C25F 304

204146

Electrolytic production of Al. sub. 3 Ni fibers using a potassium hydroxide electrolyte.

5824206, Oct 20, 1998

Jun 28, 1996

8/674229

Kenneth P. Quinlan - Newton MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

C25F 312

205646

Photoelectrochemical etching of p-InP in various nitric acid solutions demonstrates that the semiconductor undergoes etching with favorable etch rates in the negative potential region. The etch rate increases with decreasing potentials to -1. 0 V and exhibits a slight decrease with lower potentials. Etch rates exhibit a linear relation with relative light intensity. The values of etch rate for p-InP polarized at -1. 0 V vary from 0. 07 to 1. 24. mu. m/min. for HNO. sub. 3 solutions with concentrations ranging from 1. 0 to 5. 0 M. Etch rates determined in the 4 M acid range were reproducible within 4%. With acid concentrations greater than 5 M, the etch rates were observed to be inconsistent. XPS studies indicated that these inconsistencies are probably due to the formation of organic nitrogen compounds on the surface of p-InP.

4161826, Jul 24, 1979

Mar 9, 1978

5/884881

Joseph J. Hutta - Groton MA
Kenneth P. Quinlan - Newton MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

F26B 700

34 12

A method for deagglomerating finally divided aluminum metal powders by allowing said metals powders to remain in contact with water heated to room temperature for approximately 30 hours.