Inventors:
Kenneth Tan - San Jose CA, US
Karthik Janakiraman - San Jose CA, US
Judy Huang - Los Gatos CA, US
Assignee:
INTEVAC, INC. - Santa Clara CA
International Classification:
H05H 1/24, B44C 1/22, C23F 1/08
Abstract:
A plasma processing chamber having capacitive and inductive coupling of RF power. An RF power source is connected to an inductive coil and to a top electrode via a variable capacitor to control the ratio of power applied to the coil and electrode. The bottom electrode, which is part of the chuck holding the substrates, is floating, but has parasitive capacitance coupling to ground. No RF bias is applied to the chuck and/or the substrate, but the substrate is chucked using DC power. In a system utilizing the chamber, the chuck is movable and is loaded with substrates outside the chamber, enter the chamber from one side for processing, exit the chamber from an opposite side after the processing, and is unloaded in an unloading chamber. The chuck is then transported back to the loading chamber. Substrates are delivered to and removed from the system using conveyor belts.