DR. KAREN WALDRIP, PH.D.
Mental Health at Juan Tabo Blvd, Albuquerque, NM
License number
New Mexico 0189811
Category
Mental Health
Type
Mental Health
Address
Address
5203 Juan Tabo Blvd NE STE 2A, Albuquerque, NM 87111
Phone
(505) 266-6121
Personal information
See more information about KAREN WALDRIP at radaris.comName
Address
Phone
10301 Alameda Blvd NE, Albuquerque, NM 87122
2206 Garfield Ave SE, Albuquerque, NM 87106
2206 Garfield Ave, Albuquerque, NM 87106
Albuquerque, NM
10301 Alameda Rd, Albuquerque, NM 87122
Professional information
See more information about KAREN WALDRIP at trustoria.com
Materials Scientist At Sandia National Labs
Materials Scientist At Sandia National Labs
Position:
Materials Scientist at Sandia National Labs
Location:
Albuquerque, New Mexico Area
Industry:
Research
Work:
Sandia National Labs
since Jun 2004
-
Materials Scientist
Sandia National Laboratories
Jan 2002 - Jun 2004
-
Postdoc
University of Florida
Nov 1995 - Dec 2001
-
Graduate Research Assistant
George Mason University
1989 - 1994
-
Lab Assistant
Camp Varsity
1987 - 1994
-
Camp Counselor
Education:
University of Florida 1996 - 2001
PhD, Materials Science and Engineering George Mason University 1989 - 1994
Bachelors, Chemistry, Physics
PhD, Materials Science and Engineering George Mason University 1989 - 1994
Bachelors, Chemistry, Physics
Skills:
Thin Films, Electrochemistry, Semiconductors, Materials, Research, Batteries, Energy Storage
Distributed Bragg Reflector Using Aigan/Gan
Distributed Bragg Reflector Using Aigan/Gan
US Patent:
6775314, Aug 10, 2004
Filed:
Nov 29, 2001
Appl. No.:
09/998114
Inventors:
Karen E. Waldrip - Albuquerque NM
Stephen R. Lee - Albuquerque NM
Jung Han - Woodbridge CT
Stephen R. Lee - Albuquerque NM
Jung Han - Woodbridge CT
Assignee:
Sandia Corporation - Albuquerque NM
International Classification:
H01S 3082
US Classification:
372 96, 372 43
Abstract:
A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al Ga N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0. 99.
Molten-Salt-Based Growth Of Group Iii Nitrides
Molten-Salt-Based Growth Of Group Iii Nitrides
US Patent:
7435297, Oct 14, 2008
Filed:
Apr 8, 2005
Appl. No.:
11/102357
Inventors:
Karen E. Waldrip - Albuquerque NM, US
Jeffrey Y. Tsao - Albuquerque NM, US
Thomas M. Kerley - Albuquerque NM, US
Jeffrey Y. Tsao - Albuquerque NM, US
Thomas M. Kerley - Albuquerque NM, US
Assignee:
Sandia Corporation - Albuquerque NM
International Classification:
C30B 28/12, C30B 25/00, C30B 29/38
US Classification:
117 89, 117 84, 117105, 117108, 117952
Abstract:
A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.