Jon Daley - Boise ID, US Kristy A. Campbell - Boise ID, US Joseph F. Brooks - Boise ID, US
International Classification:
H01L 21/8239
US Classification:
438238, 257E21645
Abstract:
An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region vertically stacked over the substrate. The access transistor is associated with at least one resistance variable memory element.
Jon Daley - Boise ID, US Kristy A. Campbell - Boise ID, US Joseph F. Brooks - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 45/00
US Classification:
257 5, 257E45002, 365163
Abstract:
An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region vertically stacked over the substrate. The access transistor is associated with at least one resistance variable memory element.