JOSEPH P LORENZO
Broker in Stow, MA

4877299, Oct 31, 1989

Mar 15, 1989

7/323736

Joseph P. Lorenzo - Stow MA
Richard A. Soref - Newton Centre MA

United States of America as represented by the Secretary of the Air Force - Washington DC

G02B 610

350 9614

This invention describes an infrared lightwave modulation and switching aratus for very rapidly changing the refractive index of a light-transmitting, doped, semiconductor waveguide. Electrical control is exerted by a MIS diode or MISFET. The apparatus includes a transparent crystalline silicon waveguide, an electrically insulating dielectric layer overlaying a portion of that waveguide, and an elongated, conductive gate electrode in contact with the insulator. A gate voltage applied between the semiconductor and gate serves to deplete free charge carriers from the region of the waveguide under the gate. Elongated source and drain electrodes may be added to enhance electro-optic control.

5689125, Nov 18, 1997

Jun 12, 1995

8/489601

Kenneth Vaccaro - Acton MA
Andrew Davis - Boston MA
Helen M. Dauplaise - Brockton MA
Joseph P. Lorenzo - Stow MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

H01L 29778, H01L 310328

257200

In a Schottky metal junction semiconductor device, a CdS interface layer, having a thickness of under 100 angstroms, is positioned under the Schottky barrier gate of a III-V HEMT, for reducing gate leakage, and for enabling full depletion of the conducting channel. A similar layer is positioned under the insulator of an MIS device having an InP substrate. The CdS layers are deposited from a chemical bath which merely entails a simple, safe and readily controllable additional step in the otherwise conventional manufacturing process of these devices.

5532173, Jul 2, 1996

Jul 14, 1994

8/274930

Eric A. Martin - Medford MA
Kenneth Vaccaro - Acton MA
William Waters - Glassborn NJ
Joseph P. Lorenzo - Stow MA
Stephen Spaziani - Nashua NH

The United States of America as represented by the Secretary of the Air
Force - Washington DC

H01L 3118

437 2

A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration using a lattice determining surrogate substrate and a mesa-forming deep etch processing sequence and then inverted onto a new permanent substrate member and the surrogate substrate member removed in order to expose the active area backside optical energy reception surface. Fabrication of the device from two possible indium-inclusive semiconductor materials and a particular gate metal alloy is also disclosed.

4746183, May 24, 1988

May 18, 1987

7/050358

Richard A. Soref - Newton Centre MA
Joseph P. Lorenzo - Stow MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

G02B 610

350 9614

An electrically controlled integrated optical switch having a body made up entirely of crystalline silicon. More specifically, the body has a pair of channel waveguides intersecting in an X-like configuration forming therein an intersection crossover region. A first electrode is positioned on the intersection crossover region and a second electrode is positioned on the bottom of the body opposite the intersection crossover region. A controllable current/voltage source is electrically connected to the electrodes in order to alter the index of refraction of the intersection crossover region by carrier injection in order to selectively switch optical signals between diverging waveguides.

5163118, Nov 10, 1992

Aug 26, 1988

7/237244

Joseph P. Lorenzo - Stow MA
Richard A. Soref - Newton MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

G02P 610

385132

The invention comprises processes and heterostructure products defining silicon on insulator waveguides (80, 88, 90, 106, 112, 120, 122) that are suitable for use with light in the 1. 3, 1. 6. mu. m or greater wavelengths. Silicon is deposited on an insulator layer 12 on a crystalline substrate 10 and grown or regrown in crystalline form. The silicon is then etched or formed into a waveguide structures.

4789642, Dec 6, 1988

Mar 26, 1987

7/032810

Joseph P. Lorenzo - Stow MA
Richard A. Soref - Newton Centre MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

H01L 21425, G02B 610

437 24

A method of fabricating low loss silicon optical waveguides by high energy ion implantation which converts a buried region into dielectric material. The top silicon surface can them be etched or formed into waveguides that are isolated by the buried dielectric. Annealing of the top silicon layer can be used to improve optical quality and additional silicon can be added to the top surface waveguides by epitaxial growth.

5472914, Dec 5, 1995

Jul 14, 1994

8/274882

Eric A. Martin - Medford MA
Kenneth Vaccaro - Acton MA
Joseph P. Lorenzo - Stow MA
Andrew Davis - Boston MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

H01L 2160

437209

A full wafer to full wafer integrated circuit fabrication process wherein substrate removal and replacement of one wafer is used to enable an accurate alignment of this wafer with features of a receiving wafer during a see through alignment step. The invention is disclosed in terms of a wafer of photo field effect transistors being combined with a wafer of circuit devices that attend the photo field effect transistor devices. Use of the invention with the different material combination option desired for a photodetector device and its attending circuitry is also disclosed. Advantages over the more conventional chip by chip combination of wafer devices are also disclosed.

4693547, Sep 15, 1987

Feb 24, 1986

6/831910

Richard A. Soref - Newton Centre MA
Joseph P. Lorenzo - Stow MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

G02B 610

350 9613

An optically controlled integrated optical switch having a body made up of entirely crystalline silicon. More specifically, the body has a pair of channel waveguides intersecting at an X-like configuration forming therein an intersection crossover region. An electrically controlled optical source is positioned over the crossover region to shine intense, short wavelight on the crossover region in order to generate numerous electron-hole pairs in the waveguide material. These charge carriers alter the refractive index of the intersection region. A controllable current source is used to adjust the optical output power of the optical source. This, in turn, changes the amount of optical cross coupling of light between the intersecting waveguides.

5494833, Feb 27, 1996

Jul 14, 1994

8/274889

Eric A. Martin - Medford MA
Kenneth Vaccaro - Acton MA
Joseph P. Lorenzo - Stow MA

The United States of America as represented by the Secretary of the Air
Force - Wright-Patterson Air Force Base OH

H01L 3118

437 2

An improved Metal Semiconductor Metal (MSM) photodiode device and a fabrication process for realizing this device. The improved photodiode device employs frontside electrodes and backside illumination to avoid active area shadowing in the device. This configuration is achieved through a device fabrication sequence which involves substrate removal--and replacement at the device's opposed frontside surface using such media as an epoxy adhesive. The disclosed device uses gallium arsenide semiconductor materials that are lattice determined by an indium phosphide sacrificial initial substrate, in order to select a desired input energy spectral range.

5354709, Oct 11, 1994

Apr 11, 1991

7/683924

Joseph P. Lorenzo - Stow MA
Richard A. Soref - Newton MA

The United States of America as represented by the Secretary of the Air
Force - Washington DC

H01L 2120

437129

The invention comprises processes and heterostructure products defining silicon on insulator waveguides (80, 88, 90, 106, 112, 120, 122) that are suitable for use with light in the 1. 3, 1. 6. mu. m or greater wavelengths. Silicon is deposited on an insulator layer 12 on a crystalline substrate 10 and grown or regrown in crystalline form. The silicon is then etched or formed into a waveguide structures.