MR. JOSEPH MATTHEW JOHNSON
Respite Care Facility at Whitehawk Ln, Phoenix, AZ

License number

Arizona 10826

Professional information

See more information about JOSEPH MATTHEW JOHNSON at trustoria.com

Work:

United Parcel Service
Package Handler/ Ramp Agent Scuba Sciences Inc. - Phoenix, AZ
Cashier/Sales Associate/Janitor/Asst. Scuba Technician Paint&Supply Surplus - Phoenix, AZ
Store Clerk/ Janitor

Education:

Glendale Community College - Glendale, AZ
Associate in Arts in Communication, Physics, Mathematics, Computer Information Systems Moon Valley High School - Phoenix, AZ
High School Diploma in Marketing, Aviation, Military Science, Physical Science, Biology

Skills:

Group/Public Communication, Cash Handling, Sales, Marketing, Customer Service, Forklift, Heavy Machinery(aviation), Driving, Scuba Diving, Kayaking, Land Navigation (non-GPS), Microsoft Office Suite, Keyboarding etc...

Joseph Johnson - Phoenix, AZ

Work:

ABL Healthcare Solutions
Consultant ABL Healthcare Solutions
Chief Medical Officer Arizona Integrated Physicians
Chief Medical Officer Clear Choice Health Plans, Inc
Chief Medical Officer and Medical Director Sierra Health Services
Vice President, Medical Affairs Sun Health Corporation
Vice President and Chief Medical Officer Sun Health MediSun
Chief Medical Officer Sun Health Providers
Chairman of the Board and Medical Director Private practice in General and Peripheral Vascular Surgery - Sun City, AZ CIGNA - Sun City, AZ Locum Tenens in General and peripheral vascular Surgery - Sunnyvale, CA Energetic and determined teacher-leader, who builds teams

Education:

Tulane University School of Public Health
Masters in Medical Management American College of Physician Executives Penn State University
M.D. in Graduate State University of New York at Buffalo - Buffalo, NY
B. A. in Psychology

Chief Medical Officer At Arizona Integrated Physicians

Position:

Chief Medical Officer at Arizona Integrated Physicians, Chief Medical Officer at Arizona Integrated Physicians

Location:

Phoenix, Arizona Area

Industry:

Health, Wellness and Fitness

Work:

Arizona Integrated Physicians - Chief Medical Officer

Owner, On Top Interactive

Position:

Owner at On Top Interactive

Location:

Phoenix, Arizona Area

Industry:

Marketing and Advertising

Work:

On Top Interactive - Owner

Microwave Field Effect Transistor Structure

US Patent:

6831332, Dec 14, 2004

Filed:

May 25, 2002

Appl. No.:

10/156605

Inventors:

Pablo DAnna - Redding CA
Joseph H. Johnson - Phoenix AZ

Assignee:

Sirenza Microdevices, Inc. - Broomfield CO

International Classification:

H01L 2976

US Classification:

257343, 257344, 257408, 257409, 257488

Abstract:

A microwave transistor structure comprising: (1) a substrate having a top surface; (2) a silicon semiconductor material of a first conductivity type; (3) a conductive gate; (4) a channel region of a second conductivity type; (5) a drain region of the second conductivity type; (6) a body of the first conductivity type; (7) a source region of the second conductivity type; (8) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the channel region, wherein the shield plate is adjacent and parallel to the drain region, and to the conductive gate region; and (9) a conductive plug region formed in the body region of the silicon semiconductor material, wherein the conductive plug region connects a lateral surface of the body region to the top surface of the substrate.

Joseph Michael Johnson, Peoria AZ

Specialties:

Surgeon

Address:

16155 N 83Rd Ave, Peoria, AZ 85382
5315 E High St, Phoenix, AZ 85054

Education:

Pennsylvania State University, College of Medicine - Doctor of Medicine
Western Pennsylvania Hospital, The - Residency - Surgery

High Performance Active And Passive Structures Based On Silicon Material Grown Epitaxially Or Bonded To Silicon Carbide Substrate

US Patent:

2003015, Aug 14, 2003

Filed:

Feb 14, 2002

Appl. No.:

10/078588

Inventors:

Joseph Johnson - Phoenix AZ, US
Pablo D'Anna - Redding CA, US

Assignee:

XEMOD, Inc.

International Classification:

H01L031/0312

US Classification:

257/077000

Abstract:

The present invention discloses and claims the silicon carbide based silicon structure comprising: (1) a silicon carbide substrate, (2) a silicon semiconductor material having a top surface, and either bonded to the silicon carbide substrate via the bonding layer, or epitaxially grown on the silicon carbide substrate; and (3) at least one separation plug formed in the silicon semiconductor material. The separation plug extends from the top surface of the silicon semiconductor material into the silicon carbide substrate at a separation plug depth level, and is configured to block the coupling between at least two adjacent active/passive structures formed in the silicon semiconductor material.

High Performance Active And Passive Structures Based On Silicon Material Bonded To Silicon Carbide

US Patent:

8080826, Dec 20, 2011

Filed:

Sep 4, 2003

Appl. No.:

10/656613

Inventors:

Joseph H. Johnson - Phoenix AZ, US
Pablo D'Anna - Redding CA, US

Assignee:

RF Micro Devices, Inc. - Greensboro NC

International Classification:

H01L 31/0256

US Classification:

257 77, 257E29104

Abstract:

The present invention discloses and claims the Silicon Carbide based Silicon structure comprising: () a Silicon Carbide substrate, () a Silicon semiconductor material having a top surface, and either bonded to the Silicon Carbide substrate via the bonding layer, or epitaxially grown on the Silicon Carbide substrate; and () at least one separation plug formed in the Silicon semiconductor material. The single bonding layer, or either layer of the double bonding layer, is selected from the group consisting of: {a Silicon dioxide layer; a Silicon layer; a carbon layer; a Silicon germanium (SiGe) layer; a tungsten silicide layer; a titanium suicide layer; and a cobalt silicide layer}. The separation plug extends from the top surface of the Silicon semiconductor material into the Silicon Carbide substrate at a separation plug depth level, and is configured to block the coupling between at least two adjacent active/passive structures formed in the Silicon semiconductor material.

Microwave Transistor Structure Having Step Drain Region

US Patent:

6838731, Jan 4, 2005

Filed:

Apr 9, 2003

Appl. No.:

10/410908

Inventors:

Pablo D'Anna - Redding CA, US
Joseph H. Johnson - Phoenix AZ, US

Assignee:

Sirenza Microdevices, Inc. - Broomfield CO

International Classification:

H01L 2976

US Classification:

257343, 257408, 257409, 257288

Abstract:

A microwave transistor structure having a step drain region comprising: (A) a substrate having a top surface; (B) a silicon semiconductor material of a first conductivity type, having a first dopant concentration and a top surface; (C) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (D) at least one horizontal drain extension region of a second conductivity type and having a horizontal drain extension dopant concentration; (E) a step drain region formed in the silicon semiconductor material, and contacting the horizontal drain extension region; (F) a body region of the first conductivity type and having a body region dopant concentration; (G) a source region of the second conductivity type and having a source region dopant concentration; (H) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the horizontal drain extension region, the shield plate being adjacent and parallel to the horizontal drain extension region; the shield plate being adjacent and parallel to the conductive gate region; and (I) a conductive plug region.