JOSEPH LEVY
Medical Practice in Saint Louis, MO

6728275, Apr 27, 2004

Sep 19, 2002

10/246972

Joseph L. Levy - Creve Coeur MO
John S. Whiteley - Maryland Heights MO

TRW Inc. - Redondo Beach CA

H01S 304

372 36

A laser diode package ( ) according to the present invention is tolerant of short-circuit and open-circuit failures. The laser diode package ( ) includes a laser diode bar ( ), a forward-biased diode ( ), a heat sink ( ), and a lid ( ) which may have fusible links ( ). The laser diode bar ( ) and the forward-biased diode ( ) are electrically connected in parallel between the heat sink ( ) and the lid ( ). The emitting region of the laser diode bar ( ) is aligned to emit radiation away from the forward-biased diode ( ). Several packages can be stacked together to form a laser diode array ( ). The forward-biased diode ( ) allows current to pass through it when an open-circuit failure has occurred in the corresponding laser diode bar ( ), thus preventing an open-circuit failure from completely disabling the array ( ). The fusible links ( ), if used on the lid ( ), prevent damaged active regions ( ) in a laser diode bar ( ) from short-circuiting and drawing more electrical current than the other active regions ( ).

5189294, Feb 23, 1993

Jul 8, 1992

7/910466

John E. Jackson - Hazelwood MO
Joseph L. Levy - University City MO
Christopher C. Leung - Ballwin MO
Gordon H. Burkhart - St. Louis MO

The United States of America as represented by the Secretary of the Air
Force - Washington DC

G01J 120

2502019

A sliced transform lens is used to combine and focus the optical output signals of a planar M by N laser diode array onto M detector elements in a linear detector by displacing lens slices. A sliced transform lens is used to separate the composite image of the laser diode array on the detector plane into ten spots (400 emitters per spot) by displacing the lens slices relative to each other collimated He-Ne laser beam was used to examine the sliced transform lens and the linear detector array was used to measure the image sizes and the crosstalks between the images. The results show the minimum separation is approximately five detector spacings apart. The lens elements are cut from a bulk material (BK-7) and ground to desired thickness and parallelism. Then the elements are "glued" together with standard optical wax compound and ground to the prescribed focal length. THe lens slices are cut before grinding, hence the composite lens is symmetric and zero-curf configuration is preserved.

7330491, Feb 12, 2008

Apr 20, 2004

10/827981

Joseph L. Levy - Creve Coeur MO, US
John S. Whiteley - Maryland Heights MO, US

Northrop Grumman Space & Missions Systems Corporation - Los Angeles CA

H01S 3/04

372 36

A laser diode package () according to the present invention is tolerant of short-circuit and open-circuit failures. The laser diode package () includes a laser diode bar (), a forward-biased diode (), a heat sink (), and a lid () which may have fusible links (). The laser diode bar () and the forward-biased diode () are electrically connected in parallel between the heat sink () and the lid (). The emitting region of the laser diode bar () is aligned to emit radiation away from the forward-biased diode (). Several packages can be stacked together to form a laser diode array (). The forward-biased diode () allows current to pass through it when an open-circuit failure has occurred in the corresponding laser diode bar (), thus preventing an open-circuit failure from completely disabling the array (). The fusible links (), if used on the lid (), prevent damaged active regions () in a laser diode bar () from short-circuiting and drawing more electrical current than the other active regions ().

5259925, Nov 9, 1993

Jun 5, 1992

7/894479

Robert W. Herrick - Hazelwood MO
Joseph L. Levy - University City MO
Danny J. Krebs - Arnold MD

McDonnell Douglas Corporation - St. Louis MO

H01L 21302, B44C 122

1566591

A method for cleaving semiconductor devices along planes accurately positioned. Resist is applied to a major surface of the semiconductor device and a mask is projected upon the resist covered major surface. The mask is opaque in those regions in which no cleave is desired. Following the exposure of the resist, the removal of the mask and the development of the resist, an ion beam is positioned incident upon the semiconductor surface such that ion beam etching occurs in the areas in which no resist covers the semiconductor structure. Once a sufficient depth is etched in the areas not covered with resist such that the strength of the semiconductor structure in those areas is significantly less than in those areas covered by resist, the ion beam etching process is ended and the resist is stripped from the semiconductor structure. Subsequently, force is applied within the area in which the ion beam etching occurred to cleave the semiconductor structure within that region. Such cleaving may occur either prior or subsequent to etching of facets for the semiconductor devices.

7860136, Dec 28, 2010

Oct 23, 2007

11/975951

Joseph L Levy - Creve Coeur MO, US
John S. Whiteley - Maryland Heights MO, US

Northrop Grumman Systems Corporation - Los Angeles CA

H01S 3/00

372 3809, 372 34, 372 36

A laser diode package () according to the present invention is tolerant of short-circuit and open-circuit failures. The laser diode package () includes a laser diode bar (), a forward-biased diode (), a heat sink (), and a lid () which may have fusible links (). The laser diode bar () and the forward-biased diode () are electrically connected in parallel between the heat sink () and the lid (). The emitting region of the laser diode bar () is aligned to emit radiation away from the forward-biased diode (). Several packages can be stacked together to form a laser diode array (). The forward-biased diode () allows current to pass through it when an open-circuit failure has occurred in the corresponding laser diode bar (), thus preventing an open-circuit failure from completely disabling the array (). The fusible links (), if used on the lid (), prevent damaged active regions () in a laser diode bar () from short-circuiting and drawing more electrical current than the other active regions ().

4426707, Jan 17, 1984

Nov 9, 1981

6/319196

Danny W. Martin - St. Charles MO
Joseph L. Levy - University City MO

McDonnell Douglas Corporation - Long Beach CA

H01S 308

372 95

This external cavity laser utilizes an unstable resonator in conjunction with a high reflectivity stripe end mirror which is oriented substantially parallel to the plane of the maximum divergence of the laser diode output beam and whose axis is substantially parallel to the plane of the junction of the laser diode. This configuration operates with high efficiency to select only the fundamental mode of the laser diode with a minimal divergence in the output beam.