JOSEPH G GILLESPIE
Broker in Boston, MA

2009027, Nov 5, 2009

Apr 30, 2008

12/113091

William David Lee - Boston MA, US
Marvin Raymond LaFontaine - Kingston NH, US
Ashwin Madhukar Purohit - Gloucester MA, US
Joseph Daniel Gillespie - Boston MA, US
Donovan Beckel - Wakefield MA, US
Teng Chao Tao - Saugus MA, US
Alexander Henry Slocum - Bow NH, US
Samir Nayfeh - Shrewsbury MA, US

Axcelis Technologies, Inc. - Beverly MA

H02N 13/00

361234

An electrostatic clamp is provided having a clamping plate, wherein the clamping plate has a central region and an annulus region. A plurality of gas supply orifices are defined in the central region of the clamping plate, wherein the plurality of gas supply orifices are in fluid communication with a pressurized gas supply, and wherein the pressurized gas supply is configured to provide a cushion of gas between the clamping surface and the workpiece in the central region of the clamping plate via the plurality of gas supply orifices. One or more gas return orifices defined in one or more of the central region and annulus region of the clamping plate, wherein the one or more gas return orifices are in fluid communication with a vacuum source, therein generally defining an exhaust path for the cushion of gas. A seal is disposed in the annulus region of the clamping plate, wherein the seal is configured to generally prevent a leakage of the cushion of gas from the central region to an environment external to the annulus region. One or more electrodes are further electrically connected to a first voltage potential to provide a first clamping force.

8324599, Dec 4, 2012

Sep 29, 2009

12/568923

Theodore H. Smick - Essex MA, US
Joseph Daniel Gillespie - Boston MA, US

Twin Creeks Technologies, Inc. - San Jose CA

H01J 37/317

25049221, 2504431

An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. A respective wafer lift structure on each carrier is moveable between first and second positions, with the wafer supported spaced away from the heat sink and in thermal contact with the heat sink respectively. The lift structure is operated to move between the first and second positions wheel the implant is rotating. This allows control of wafer temperature during the implant process by adjusting the thermal contact between wafers and heat sinks.

8268645, Sep 18, 2012

Dec 20, 2011

13/331909

Adam Kell - Orinda CA, US
Robert Clark-Phelps - Northborough MA, US
Joseph D. Gillespie - Boston MA, US
Gopal Prabhu - San Jose CA, US
Takao Sakase - Rowley MA, US
Theodore H. Smick - Essex MA, US
Steve Zuniga - Soquel CA, US

Twin Creeks Technologies, Inc. - San Jose CA

H01L 21/00, H02N 6/00

438 19, 136243

A method for producing a lamina from a donor body includes implanting the donor body with an ion dosage and heating the donor body to an implant temperature during implanting. The donor body is separably contacted with a susceptor assembly, where the donor body and the susceptor assembly are in direct contact. A lamina is exfoliated from the donor body by applying a thermal profile to the donor body. Implantation and exfoliation conditions may be adjusted in order to maximize the defect-free area of the lamina.

8226142, Jul 24, 2012

Jul 23, 2008

12/178014

Joseph D. Gillespie - Boston MA, US
Sor Kham - Lowell MA, US
Robert E. Wayne - Gloucester MA, US

Axcelis Technologies, Inc. - Beverly MA

B66F 19/00

294213, 294907, 414730, 414741, 414936, 414941, 901 34, 361234

A workpiece gripping integrity device and method are provided having a charge-transfer sensing device configured to detect a change in charge associated with a gripper arm assembly based on a grip condition thereof. The charge-transfer sensing device can be configured to detect a change in capacitance between the gripper arm assembly and ground, wherein the change in capacitance is based on a grip condition of the gripper arm assembly associated with a plurality of grippers contacting the workpiece.

8633458, Jan 21, 2014

Nov 15, 2011

13/296436

Theodore Smick - Essex MA, US
Geoffrey Ryding - Manchester MA, US
Hilton Glavish - Incline Village NV, US
Takao Sakase - Rowley MA, US
William Park, Jr. - Somerville MA, US
Paul Eide - Stratham NH, US
Drew Arnold - Salem MA, US
Ronald Horner - Auburndale MA, US
Joseph Gillespie - Boston MA, US

GTAT Corporation - Nashua NH

G21G 5/00

2504923, 2504921, 2504922

Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.

7982197, Jul 19, 2011

Jun 30, 2009

12/494268

Theodore H. Smick - Essex MA, US
Geoffrey Ryding - Manchester MA, US
Kenneth Harry Purser - Gloucester MA, US
Joseph Daniel Gillespie - Boston MA, US

Twin Creeks Technologies, Inc. - San Jose CA

H01J 37/317, H01J 37/20

25049221, 2504922, 25049211, 250424, 250423 R, 250396 ML

A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. Detachable connections in the cooling fluid conduits in the vacuum chamber may comprise tandem seals with an intermediate chamber between them which can be vented outside the vacuum chamber, or independently vacuum pumped. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.