Joseph A. Levert
Engineering at Lincoln St, Santa Clara, CA
License number
Louisiana EI.0007745
Issued Date
Jan 1, 1900
Expiration Date
Mar 31, 2002
Category
Civil Engineer
Address
Address
1255 Lincoln St APT 13, Santa Clara, CA 95050
Professional information
Composition For Chemical Mechanical Planarization Of Copper, Tantalum And Tantalum Nitride
US Patent:
6630433, Oct 7, 2003
Filed:
Dec 20, 2000
Appl. No.:
09/745266
Inventors:
Fan Zhang - San Jose CA
Daniel L. Towery - Santa Clara CA
Joseph A. Levert - Santa Clara CA
Shyama P. Mukherjee - Morgan Hill CA
Daniel L. Towery - Santa Clara CA
Joseph A. Levert - Santa Clara CA
Shyama P. Mukherjee - Morgan Hill CA
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
C11D 708
US Classification:
510175, 252 794, 438693
Abstract:
Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.
Compositions And Processes For Spin Etch Planarization
US Patent:
2001005, Dec 27, 2001
Filed:
Jul 19, 1999
Appl. No.:
09/356487
Inventors:
JOSEPH A. LEVERT - SANTA CLARA CA, US
DANIEL L. TOWERY - SANTA CLARA CA, US
DANIEL L. TOWERY - SANTA CLARA CA, US
International Classification:
C09K013/00
US Classification:
252/079100
Abstract:
The present invention describes methods and chemical compositions for the spin etch planarization of surfaces, particularly copper and tantalum. An etching solution is brought into contact with the upper face of a spinning wafer through a nozzle, preferably an oscillating nozzle. The etching solution has a composition that oxidizes the spinning surface, forming a passivation layer thereon. The etching solution further contains reactants for removing the passivation layer exposing the underlying surface to further reaction, leading to the desired etching of the surface. The characteristics of the etching solution are adjusted such that reactant diffusion to lower regions of the surface limits the rate of etching. Faster reaction occurs at higher regions of the surface lying in more rapidly moving etching solution resulting in the desired planarization.