JOSEF WARREN KOREJWA
Pilots at Dorset St, Cedar Beach, VT

6409903, Jun 25, 2002

Dec 21, 1999

09/469120

Dean S. Chung - Essex Junction VT
Josef W. Korejwa - Charlotte VT
Erick G. Walton - Underhill VT

International Business Machines Corporation - Armonk NY

C25D 500

205 96, 205105, 205157, 205291, 2042295, 204DIG 9, 204922FOR

A method and apparatus are provided for the electroplating of a substrate such as a semiconductor wafer which provides a uniform electroplated surface and minimizes bum-through of a seed layer used on the substrate to initiate electroplating. The method and apparatus of the invention uses a specially defined multistep electroplating process wherein, in one aspect, a voltage below a predetermined threshold voltage is applied to the anode and cathode for a first time period followed by applying a current to the anode and cathode for a second time period the current producing a voltage below the predetermined threshold voltage. In another aspect of the invention, a current is applied to the anode and cathode substrate which current is preprogrammed to ramp up to a current value from a first current value which current produces a voltage below a predetermined threshold voltage. Electroplated articles including copper electroplated semiconductor wafers made using the apparatus and method of the invention are also provided.

6210541, Apr 3, 2001

Apr 28, 1998

9/067454

Edward C. Cooney - Jericho VT
Josef W. Korejwa - Charlotte VT
David C. Strippe - Westford VT

International Business Machines Corporation - Armonk NY

C23C 1434, C23C 1606, C23C 1646

20419215

A process and apparatus for depositing thin films onto a substrate. The process comprises mounting a wafer onto a wafer chuck and pumping a cryogenic fluid through the chuck which cools the wafer chuck and the wafer to a temperature below about +20. degree. C. A thin film is then deposited over the cooled wafer using a sputter deposition process while maintaining the temperature of the wafer chuck and the wafer below about +20. degree. C. The preferred embodiment of the present invention includes the use of liquid nitrogen as the cryogenic fluid, and copper as the material to be deposited through the sputtering process. In addition, the preferred embodiment cools the wafer chuck and the wafer to a temperature of about -100. degree. C. The apparatus includes the physical vapor deposition vessel, the wafer chuck, the source of material to be deposited, the wafer, and the cooling line which passes through the wafer chuck to carry the cooling fluid to the chuck.

6270646, Aug 7, 2001

Dec 28, 1999

9/473909

Erick Gregory Walton - Underhill VT
Dean S. Chung - Essex Junction VT
Lara Sandra Collins - Georgia VT
William E. Corbin - Newburgh NY
Hariklia Deligianni - Edgewater NJ
Daniel Charles Edelstein - New Rochelle NY
James E. Fluegel - Rhinebeck NY
Josef Warren Korejwa - Charlotte VT
Peter S. Locke - Hopewell Junction NY
Cyprian Emeka Uzoh - Milpitas CA

International Business Machines Corporation - Armonk NY

C25D 522, C25D 506, C25D 1700

205 93

A metal plating apparatus is described which includes a compressible member having a conductive surface covering substantially all of the surface of the substrate to be plated. The plating current is thereby transmitted over a wide area of the substrate, rather than a few localized contact points. The compressible member is porous so as to absorb the plating solution and transmit the plating solution to the substrate. The wafer and compressible member may rotate with respect to each other. The compressible member may be at cathode potential or may be a passive circuit element.