John William Ladd
Combative Sports in Boise, ID
License number
Utah 6132953-4804
Issued Date
Mar 14, 2007
Expiration Date
Dec 31, 2008
Category
Unarmed Combat
Type
Second
Address
Address
Boise, ID
Professional information
Methods, Systems, And Apparatuses That Compensate For Noise Generated In An Imager Device
US Patent:
2009010, Apr 23, 2009
Filed:
Oct 19, 2007
Appl. No.:
11/875101
Inventors:
John Ladd - Boise ID, US
Gennadiy Agranov - Boise ID, US
Johannes Solhusvik - Haslum, NO
Trygve Willassen - Oppegard, NO
Gennadiy Agranov - Boise ID, US
Johannes Solhusvik - Haslum, NO
Trygve Willassen - Oppegard, NO
International Classification:
G06K 9/40, H04N 5/217
US Classification:
382260, 348241, 348E05078
Abstract:
Methods, systems and apparatuses for using regular and/or dark pixels of a pixel array in either a fixed or dynamic fashion to compensate for fixed pattern noise.
Split Transfer Gate For Dark Current Suppression An Imager Pixel
US Patent:
7642107, Jan 5, 2010
Filed:
Dec 21, 2006
Appl. No.:
11/642868
Inventors:
John Ladd - Boise ID, US
Assignee:
Aptina Imaging Corporation - Grand Cayman
International Classification:
H01L 21/00, H01L 21/4763
US Classification:
438 20, 438 22, 438 30, 438 45, 438 75, 438587, 438593, 257 53, 257E2165
Abstract:
A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a charge integration period of a photosensor, the two sections of the transfer gate may be oppositely biased to decrease dark current while controlling blooming of electrons within and out of the pixel cell. During charge transfer the two gate sections may be commonly connected to a positive voltage sufficient to transfer charge from the photosensor to a floating diffusion region.
Method And Apparatus For Dark Current And Blooming Suppression In 4T Cmos Imager Pixel
US Patent:
8021908, Sep 20, 2011
Filed:
Nov 10, 2010
Appl. No.:
12/943082
Inventors:
John Ladd - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 29/04
US Classification:
438 60, 438 75, 438144, 257 59, 257233, 257292, 257431, 257466, 257E21644, 257E21185, 257E21189, 257E21456, 257E21458, 257219, 257225, 257239
Abstract:
A method and apparatus for operating an imager pixel that includes the act of applying a relatively small first polarity voltage and a plurality of pulses of a second polarity voltage on the gate of a transfer transistor during a charge integration period.
Method And Apparatus Providing Reduced Metal Routing In Imagers
US Patent:
8077236, Dec 13, 2011
Filed:
Mar 20, 2008
Appl. No.:
12/076634
Inventors:
Richard S. Johnson - Boise ID, US
John Ladd - Boise ID, US
John Ladd - Boise ID, US
Assignee:
Aptina Imaging Corporation - George Town
International Classification:
H04N 3/14, H04N 5/335, H01L 27/00, H01L 31/062, H01L 31/113
US Classification:
348294, 2502081, 257291, 257292, 257293
Abstract:
An imaging device and method for operating the device. The imaging device comprises a pixel array having a plurality of pixels arranged in rows and columns. At least one pixel of the array comprises a photosensor and a first reset circuit responsive to a first reset control signal for resetting the photosensor. A first terminal of the first reset circuit is coupled to the photosensor and a second terminal of the first reset circuit is configured to receive a first resetting voltage from a control line.
Split Transfer Gate For Dark Current Suppression In An Imager Pixel
US Patent:
7696597, Apr 13, 2010
Filed:
Jun 24, 2009
Appl. No.:
12/491084
Inventors:
John Ladd - Boise ID, US
Assignee:
Aptina Imaging Corporation - Grand Cayman
International Classification:
H01L 31/06, H01L 27/146
US Classification:
257462, 257E27131, 257E27132, 327131
Abstract:
A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a charge integration period of a photosensor, the two sections of the transfer gate may be oppositely biased to decrease dark current while controlling blooming of electrons within and out of the pixel cell. During charge transfer the two gate sections may be commonly connected to a positive voltage sufficient to transfer charge from the photosensor to a floating diffusion region.
Method, Apparatus And System For Charge Injection Suppression In Active Pixel Sensors
US Patent:
7619671, Nov 17, 2009
Filed:
Jul 18, 2006
Appl. No.:
11/488110
Inventors:
Xiangli Li - Boise ID, US
Chen Xu - Boise ID, US
Peter Parker Altice - Lake Oswego OR, US
John Ladd - Boise ID, US
Chen Xu - Boise ID, US
Peter Parker Altice - Lake Oswego OR, US
John Ladd - Boise ID, US
Assignee:
Aptina Imaging Corporation - Grand Cayman
International Classification:
H04N 3/14, H04N 5/335
US Classification:
348301, 348294, 348308
Abstract:
A method and apparatus are provided for operation of an image sensor during signal readout. During a reset operation the gate of a reset transistor coupled to the storage node receives a voltage greater than a threshold voltage to produce a reset of the storage node. During a period where photogenerated charges stored at the storage node are read out the gate of the reset transistor receives a voltage Vgreater than ground, but less than a maximum voltage which can be stored at the storage node.
Method And Apparatus For Dark Current And Blooming Supression In 4T Cmos Imager Pixel
US Patent:
8278131, Oct 2, 2012
Filed:
Aug 12, 2011
Appl. No.:
13/209024
Inventors:
John Ladd - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 29/04
US Classification:
438 60, 438144, 438 75, 257 59, 257233, 257292, 257431, 257187, 257E21644, 257E21185, 257E21189, 257E21458, 257E21456
Abstract:
A method and apparatus for operating an imager pixel that includes the act of applying a relatively small first polarity voltage and a plurality of pulses of a second polarity voltage on the gate of a transfer transistor during a charge integration period.
Reducing Noise In An Imager By Sampling Signals With A Plurality Of Capacitances Connected To An Output Line
US Patent:
7538304, May 26, 2009
Filed:
Mar 30, 2006
Appl. No.:
11/392792
Inventors:
John Ladd - Boise ID, US
Assignee:
Aptina Imaging Corporation - Grand Cayman
International Classification:
C12Q 1/68, H01J 40/00
US Classification:
250200, 2502081, 250214 R, 348241
Abstract:
A method of operating an imager to have increased capacitance on a pixel output or column output line during most reset signal and pixel signal sampling operations from the line. The increased capacitance is achieved by switching in multiple sample and hold capacitors during the sampling operations.
Method Of Forming Pixel Cells With Color Specific Characteristics
US Patent:
7704782, Apr 27, 2010
Filed:
Aug 30, 2005
Appl. No.:
11/213938
Inventors:
John Ladd - Boise ID, US
Inna Patrick - Boise ID, US
Gennadiy A. Agranov - Boise ID, US
Jeff A. McKee - Meridian ID, US
Inna Patrick - Boise ID, US
Gennadiy A. Agranov - Boise ID, US
Jeff A. McKee - Meridian ID, US
Assignee:
Aptina Imaging Corporation - Grand Cayman
International Classification:
H01L 21/00
US Classification:
438 73, 257292, 257E21352
Abstract:
Imager devices having an array of photosensors, each photosensor having at least two doped regions. The two doped regions are each independently tailored to a particular wavelength.
Structure And Method For Fpn Reduction In Imaging Devices
US Patent:
7808063, Oct 5, 2010
Filed:
May 26, 2005
Appl. No.:
11/137446
Inventors:
Ulrich C. Boettiger - Boise ID, US
John Ladd - Boise ID, US
John Ladd - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 29/04, H01L 31/036, H01L 31/00, H01L 27/14
US Classification:
257432, 257 72, 257443
Abstract:
Imaging devices having reduced fixed pattern noise are disclosed. The fixed pattern noise in the imaging devices is reduced by measuring and adjusting the spectral characteristics of the imager device on a pixel by pixel basis. The fixed pattern noise of the pixel cells are changed by modifying the absorption, reflectance, refractive index, shape, and/or micro structure of the material.