MR. JOHN WESLEY RILEY, L.M.T., M.T.I.
Massage Therapy at Bee Cave Rd, Austin, TX

8068371, Nov 29, 2011

Dec 31, 2008

12/347979

Feroze A. Merchant - Austin TX, US
John Reginald Riley - Austin TX, US
Vinod Sannareddy - Austin TX, US

Intel Corporation - Santa Clara CA

G11C 7/10

36518904, 36518914, 36518908, 365196, 365100, 365148

Methods and systems to dynamically control state-retention strengths of a plurality of memory cells during a write operation to a subset of the memory cells. Dynamic control may include weakening state-retention strengths of the plurality of memory cells during a write operation to a subset of the memory cells, while preserving state-retention abilities of remaining ones of the plurality of memory cells. Weakening may include adjusting one or more resistances between one or more power supplies and the plurality of memory cells. Dynamic control may be selectively performed on portions of each of the memory cells in response to an input data logic state. Dynamic control may reduce a write contention within the subset of memory cells without disabling state-retention abilities of remaining ones of the plurality of memory cells, and may improve write response times of the memory cells.

7630228, Dec 8, 2009

Aug 30, 2007

11/897442

John Reginald Riley - Austin TX, US
Mohammed Hasan Taufique - Austin TX, US

Intel Corporation - Santa Clara CA

G11C 11/00

365154, 365226

In one embodiment a low voltage high performance memory system is disclosed. The system can include a bit cell, a first pass gate coupled to the bit cell to receive a write signal, a second pass gate coupled to the bit cell to receive the write signal, and an supply current controller to reduce current to at least a portion of the bit cell and to supply current to another portion of the cell in response to a write control signal and a data signal during a bit cell transition. Reducing the current to a portion of the bit cell and supplying current to another portion of the bit cell during transition can allow the bit cell to transition to a different state faster and can reduce the effects of device variations that manifest during low voltage operation. Other embodiments are also disclosed.