Inventors:
George Argos - Colorado Springs CO
John D. Spano - Colorado Springs CO
Steven D. Traynor - Colorado Springs CO
Assignee:
Ramtron International Corporation - Colorado Springs CO
International Classification:
H01L 2976, H01L 3100
Abstract:
A method for passivating an integrated circuit includes the RF sputtering of a hard passivation layer on the surface of the integrated circuit. The hard passivation layer can be a ceramic material such as various doped and undoped titanates, zirconates, niobates, tantalates, stanates, hafnates, and manganates, in either their ferroelectric or non-ferroelectric phases. Other exotic, hard, and usually non-ferroelectric materials not normally found in integrated circuit processing such as carbides may also be used. If the integrated circuit sought to be passivated contains ferroelectric devices, the hard passivation layer can be fabricated out of the same material used in the integrated ferroelectric devices. An optional silicon dioxide insulating layer can be deposited on the surface of the integrated circuit before the hard passivation layer is deposited. The optional silicon dioxide layer is used to prevent any possible contamination of the integrated circuit by the passivation layer.