John Scrimshaw Simon
Physician at Egbert St, Denver, CO
License number
Colorado 19180
Issued Date
Jan 14, 1975
Renew Date
Jun 1, 2005
Expiration Date
May 31, 2007
Type
Physician
Address
Address
1860 E Egbert St SUITE 100, Denver, CO 80601
Personal information
See more information about John Scrimshaw Simon at radaris.comName
Address
Phone
4901 S Monaco St APT 225, Denver, CO 80237
5204 Griffith Dr, Fort Collins, CO 80525
4440 Independence Trl, Evergreen, CO 80439
550 E 12Th Ave APT 901, Denver, CO 80203
5640 W 76Th Dr, Arvada, CO 80003
Professional information
See more information about John Scrimshaw Simon at trustoria.com
Sr Sales Executive. At Dalbey Education Institute And Owner, Market Makers Ltd.
Sr Sales Executive. At Dalbey Education Institute And Owner, Market Makers Ltd.
Position:
Sr Sales Executive. at Dalbey Education Institute, Owner at Market Makers Ltd.
Location:
Greater Denver Area
Industry:
Marketing and Advertising
Work:
Dalbey Education Institute
-
Sr Sales Executive.
Market Makers Ltd.
-
Owner
District Representative At Ueis
District Representative At Ueis
Position:
District Representative at UEIS
Location:
Greater Denver Area
Industry:
Education Management
Work:
UEIS
-
District Representative
Wealth For Life, LLC
2007 - 2011
-
President
Computer Networking Professional
Computer Networking Professional
Location:
Greater Denver Area
Industry:
Computer Networking
Senior Consultant At Americas Job Network
Senior Consultant At Americas Job Network
Position:
senior Consultant at Americas Job Network
Location:
Greater Denver Area
Industry:
Marketing and Advertising
Work:
Americas Job Network
-
senior Consultant
Compositionally Graded Heterojunction Semiconductor Device And Method Of Making Same
Compositionally Graded Heterojunction Semiconductor Device And Method Of Making Same
US Patent:
2011023, Sep 29, 2011
Filed:
Dec 14, 2010
Appl. No.:
12/967892
Inventors:
John SIMON - Golden CO, US
Debdeep JENA - South Bend IN, US
Huili XING - South Bend IN, US
Debdeep JENA - South Bend IN, US
Huili XING - South Bend IN, US
International Classification:
H01L 29/20, H01L 21/20, H01S 5/323
US Classification:
372 44011, 257 76, 438478, 257191, 257E29089, 257E2109
Abstract:
A compositionally graded semiconductor device and a method of making same are disclosed that provides an efficient p-type doping for wide bandgap semiconductors by exploiting electronic polarization within the crystalline lattice. The compositional graded semiconductor graded device includes a graded heterojunction interface that exhibits a 3D bound polarization-induced sheet charge that spreads in accordance with ρ(z)=−∇·P(z), where ρ(z) is a volume charge density in a polar (z) direction, and ∇ is a divergence operator, wherein the graded heterojunction interface is configured to exhibit substantially equivalent conductivities along both lateral and vertical directions relative to the graded heterojunction interface.
High Throughput Semiconductor Deposition System
High Throughput Semiconductor Deposition System
US Patent:
2013030, Nov 21, 2013
Filed:
May 15, 2013
Appl. No.:
13/895190
Inventors:
Aaron Joseph PTAK - Littleton CO, US
Thomas F. KUECH - Madison WI, US
Kevin SCHULTE - Madison WI, US
John D. SIMON - Golden CO, US
Thomas F. KUECH - Madison WI, US
Kevin SCHULTE - Madison WI, US
John D. SIMON - Golden CO, US
Assignee:
ALLIANCE FOR SUSTAINABLE ENERGY, LLC - Golden CO
International Classification:
H01L 21/02
US Classification:
438478, 118719
Abstract:
A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 μm/minute.