Inventors:
John R. Martin - Foxborough MA
Assignee:
Analog Devices, Inc. - Norwood MA
International Classification:
H01L 2312
US Classification:
257704, 257687, 257417, 257659, 257678, 438125, 438106, 438127, 438121, 438123, 438124, 438 52, 438 53
Abstract:
An in-situ cap for an integrated circuit device such as a micromachined device and a method of making such a cap by fabricating an integrated circuit element on a substrate; forming a support layer over the integrated circuit element and forming a cap structure in the support layer covering the integrated circuit element.