Inventors:
Haluk M. Aytac - Berkeley CA
John F. MacDonald - Orem UT
Assignee:
National Semiconductor Corporation - Santa Clara CA
International Classification:
B05D 512, H01L 744, B44C 122, C03C 1500
Abstract:
A process to program ROM's after the insulation, gates, and interconnect circuitry have been formed by using a contact mask to define openings at the depletion cells, which openings extend beside the gates to the sources and drain so as to allow phosphorus dopant to be diffused sideways under the gates to short out the cell.