MR. JOHN PATRICK GALLAGHER, M.ED., LMHC
Mental Health at New England Ave, Winter Park, FL

6648966, Nov 18, 2003

Aug 1, 2001

09/920448

Herbert Paul Maruska - Winter Springs FL
John Joseph Gallagher - Winter Park FL
Mitch M. C. Chou - Sanford FL

Crystal Photonics, Incorporated - Sanford FL

C30B 2518

117101, 117 94, 117 95, 117105, 117910, 117952

A method for making a free-standing, single crystal, gallium nitride (GaN) wafer includes forming a single crystal GaN layer directly on a single crystal LiAlO substrate using a gallium halide reactant gas, and removing the single crystal LiAlO substrate from the single crystal GaN layer to make the free-standing, single crystal GaN wafer. Forming the single crystal GaN layer may comprise depositing GaN by vapor phase epitaxy (VPE) using the gallium halide reactant gas and a nitrogen-containing reactant gas. Because gallium halide is used as a reactant gas rather than a metal organic reactant such as trimethygallium (TMG), the growth of the GaN layer can be performed using VPE which provides commercially acceptable rapid growth rates. In addition, the GaN layer is also devoid of carbon throughout. Because the GaN layer produced is high quality single crystal, it may have a defect density of less than about 10 cm.

7033858, Apr 25, 2006

Mar 18, 2004

10/803467

Bruce H. T. Chai - Oviedo FL, US
John Joseph Gallagher - Winter Park FL, US
David Wayne Hill - Orlando FL, US

Crystal Photonics, Incorporated - Sanford FL

C30B 25/18

438106, 117101, 117105

A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and removing the sacrificial growth substrate. The method may further include adding at least one contact onto a surface of the at least one semiconductor layer opposite the mounting substrate, and dividing the mounting substrate and at least one semiconductor layer into a plurality of individual semiconductor devices. To make the final devices, the method may further include bonding the mounting substrate of each individual semiconductor device to a heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.

7169227, Jan 30, 2007

Mar 25, 2003

10/396986

Herbert Paul Maruska - Winter Springs FL, US
John Joseph Gallagher - Winter Park FL, US
Mitch M. C. Chou - Sanford FL, US
David W. Hill - Orlando FL, US

Crystal Photonics, Incorporated - Sanford FL

C30B 25/12, C30B 25/14

117 95, 117 89, 117 94, 117101, 117105

A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlOsubstrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlOsubstrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 10cm.

7576372, Aug 18, 2009

Jan 26, 2007

11/627712

Herbert Paul Maruska - Winter Springs FL, US
John Joseph Gallagher - Winter Park FL, US
Mitch M. C. Chou - Sanford FL, US
David W. Hill - Orlando FL, US

Crystal Photonics, Incorporated - Sanford FL

H01L 31/072, H01L 31/109, H01L 31/0328, H01L 31/0336

257190, 257183, 257200, 117 89, 117 94

A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlOsubstrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlOsubstrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 10cm.