Inventors:
John L. McCollum - Portland OR
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 2122
Abstract:
A process for growing field oxide particularly for a dynamic memory is described. The process results in thinner field oxides in the storage array (2000-3000 A) and thicker oxides for the peripheral circuits (7000-8000 A). The thinner field oxide regions have smaller bird-beaks, reducing required substrate area. The plate for the storage nodes are coupled to ground potential, thus the thinner field oxides in the storage region provide sufficient isolation.