JOHN H CHEN, M.D.
Radiology at Vermont Ave, Los Angeles, CA
License number
California A42452
Category
Radiology
Type
Body Imaging
License number
California A42452
Category
Radiology
Type
Neuroradiology
License number
California A42452
Category
Radiology
Type
Nuclear Radiology
License number
California A42452
Category
Radiology
Type
Pediatric Radiology
License number
California A42452
Category
Radiology
Type
Diagnostic Radiology
License number
California A42452
Category
Radiology
Type
Therapeutic Radiology
License number
California A42452
Category
Radiology
Type
Vascular & Interventional Radiology
License number
California A42452
Category
Radiology
Type
Diagnostic Ultrasound
Address
Address
2
1300 N Vermont Ave, Los Angeles, CA 90027
PO Box 657, West Covina, CA 91793
PO Box 657, West Covina, CA 91793
Phone
(323) 913-4260
(323) 913-4922 (Fax)
(909) 595-4595
(909) 595-4365 (Fax)
(323) 913-4922 (Fax)
(909) 595-4595
(909) 595-4365 (Fax)
Personal information
See more information about JOHN H CHEN at radaris.comName
Address
Phone
4637 Lage Dr, San Jose, CA 95130
4512 Birdseye Way, Elk Grove, CA 95758
4493 Juneberry Ct, Concord, CA 94521
47000 Warm Springs Blvd STE 1, Fremont, CA 94539
443 Gaven St, San Francisco, CA 94134
Professional information
Gm, Position Mobile Inc.
Position:
Business Development at Evutec, Founder at Everwood Sourcing, GM at Position Mobile Inc.
Location:
Greater Los Angeles Area
Industry:
Telecommunications
Work:
Evutec
since 2012
-
Business Development
Everwood Sourcing
since 2011
-
Founder
Position Mobile Inc.
since Jul 2006
-
GM
DBTEL Inc.
1996 - 2006
-
Global Sales Manager
Education:
Boston University
Oliver Ames
Oliver Ames
Ceo At /Powerland Equipment /Hongji Usa Industry, Inc.
Position:
COO at Powerland Power Equipment, CEO at Hongji USA Industry, Inc.
Location:
Greater Los Angeles Area
Industry:
Import and Export
Work:
Powerland Power Equipment
since Oct 2007
-
COO
Hongji USA Industry, Inc.
since Mar 1995
-
CEO
Education:
Sichuan University
Engineering
Engineering
Interests:
e-commerce, golf, aviation, music
Database Developer At Administrative Office Of Pennsylvania Courts
Position:
Database Developer at Administrative Office of Pennsylvania Courts
Location:
Greater Los Angeles Area
Industry:
Computer Software
Work:
Administrative Office of Pennsylvania Courts
since May 2011
-
Database Developer
California Creative Solutions (CCS)
Feb 2008 - May 2011
-
Sybase Database Developer Consultant
Education:
University of California, Irvine 2005 - 2007
BA, Computer Science
BA, Computer Science
National Accounts Manager At Markwins International
Position:
National Accounts Manager at Markwins International
Location:
Greater Los Angeles Area
Industry:
Cosmetics
Work:
Markwins International
-
National Accounts Manager
John Chen - Tarzana, CA
Work:
Upon Request
Accountant / Full Charge Bookkeeper
Accountant / Full Charge Bookkeeper
Education:
UNIVERSITY OF SAN FRANCISCO - San Francisco, CA
Bachelor of Business Administration in Accounting LEHIGH UNIVERSITY - Bethlehem, PA
Master of Computing Science in Master of Computing Science THE CATHOLIC UNIVERSITY OF AMERICA - Washington, DC
Master of Arts in Accounting
Bachelor of Business Administration in Accounting LEHIGH UNIVERSITY - Bethlehem, PA
Master of Computing Science in Master of Computing Science THE CATHOLIC UNIVERSITY OF AMERICA - Washington, DC
Master of Arts in Accounting
Animation Professional
Location:
Greater Los Angeles Area
Industry:
Animation
Education:
American Graduate University 2003 - 2007
Capital Markets Professional
Location:
Greater Los Angeles Area
Industry:
Capital Markets
Method For Forming Thin Conducting Lines By Ion Implantation And Preferential Etching
US Patent:
4569124, Feb 11, 1986
Filed:
May 22, 1984
Appl. No.:
6/613114
Inventors:
David B. Rensch - Thousand Oaks CA
John Y. Chen - Los Angeles CA
John Y. Chen - Los Angeles CA
Assignee:
Hughes Aircraft Company - El Segundo CA
International Classification:
H01L 2128, H01L 21302, H01L 21425
US Classification:
29591
Abstract:
A thin conducting line such as a gate pattern is defined on a semiconductor chip (10) by applying a narrow ion beam, suitably a focused-ion-beam (16) having a submicrometer thickness from a source (18) onto a thin layer (14) of an inorganic material such as silicon or aluminum overlying a layer (12) of refractory metal on a substrate (11). The ion beam is translated to form a gate pattern at a dose between about 0. 1 to 50. times. 10. sup. 15 cm. sup. -2 and an energy from about 1 to 1000 KeV. Ions are implanted into the silicon and aluminum layers and into the underlying portions of the refractory metal layer and to render the exposed portions of the layers preferentially resistant to wet-etchant. The portions of layers which are not exposed nor protected by layers which are exposed, are preferentially removed to form a gate. Conventional MOSFET or MESFET processing to implant ions to form source and drain regions may then be performed.
Process For Fabricating Cmos Devices With Self-Aligned Channel Stops
US Patent:
4411058, Oct 25, 1983
Filed:
Aug 31, 1981
Appl. No.:
6/297903
Inventors:
John Y. Chen - Los Angeles CA
Assignee:
Hughes Aircraft Company - El Segundo CA
International Classification:
H01L 21265
US Classification:
29571
Abstract:
An improved process is provided for fabricating CMOS (Complementary Metal Oxide Semiconductor) devices formed on a semiconductor substrate having n-channel and p-channel regions of n- and p-type conductivity, respectively. Conventional source, drain and gate portions are formed in the regions and electrical contacts are made thereto. The improvement comprises providing self-aligned channel stops between regions of the same conductivity and between regions of the opposite conductivity. The channel stops between regions of the opposite conductivity are mutually self-aligned. The self-alignment is achieved by use of a single mask, called a "complementary" mask. The process of the invention permits fabrication of submicrometer devices.
John Chen
Location:
Greater Los Angeles Area
Industry:
Defense & Space