JOHN E BARRIS
Broker in Worcester, MA
License number
Massachusetts 9078193
Issued Date
May 31, 2005
Expiration Date
Apr 6, 2008
Type
Salesperson
Address
Address
Worcester, MA 01602
Professional information
Integrated Dual Frequency Noise Attenuator
US Patent:
5898562, Apr 27, 1999
Filed:
May 9, 1997
Appl. No.:
8/853598
Inventors:
Jeffery C. Cain - Surfside Beach SC
John E. Barris - Worcester MA
John E. Barris - Worcester MA
Assignee:
AVX Corporation - Myrtle Beach SC
International Classification:
H01G 438
US Classification:
361303
Abstract:
An integral dual frequency by-pass device is of one or more ceramic dielectric layers, the opposed surfaces of which are formed with electrodes of generally U-shaped configuration. The base portions of the electrodes are exposed at opposite surfaces of the monolith, the leg portions of the U-shaped electrodes extending toward the base portions of electrodes of opposite polarity. The overlap or registration area of one pair of legs differs from the overlap area of the other leg pair with the result that two capacitors of different values are formed, the capacitors being in parallel and accordingly defining low impedance path at two discrete frequencies. By varying the conductive paths as a function of the length of the electrode and/or the base of the U, a desired internal inductance is be developed.