JOHN D MILLER, CRNA
Nursing at Gemini St, Houston, TX

5686351, Nov 11, 1997

May 23, 1995

8/447477

Terry D. Golding - Missouri City TX
John H. Miller - Houston TX

The University of Houston - Houston TX

H01L 2120

437132

The present invention provides for the fabrication of single layer semimetal/semiconductor heterostructures and multilayer semimetal/semiconductor structures. Each semimetal/semiconductor layer fabricated in accordance with the present invention has compatible crystal symmetry across the heterojunction between a semimetal and a semiconductor. A single layer semimetal/semiconductor structure is fabricated by growing a rhombohedral semimetal in a �111! direction on a substrate material having a (111) orientation, and then growing a zincblende semiconductor in a �111! direction on the semimetal. A multilayer semimetal/semiconductor structure may be grown from the single layer semimetal/semiconductor structure by growing an additional rhombohedral semimetal layer in a �111! direction on the preceding semiconductor grown, then growing an additional zincblende semiconductor layer in a �111!direction on the additional semimetal layer, and then repeating this process as many times as desired. Each semimetal to be sandwiched between semiconductors in the multilayer semimetal/semiconductor structure may be grown thin enough that the semimetal is converted into a semiconductor.

5449561, Sep 12, 1995

Jul 17, 1992

7/916050

Terry D. Golding - Missouri City TX
John H. Miller - Houston TX

University of Houston - Houston TX

B32B 1504

428457

The present invention provides for the fabrication of single layer semimetal/semiconductor heterostructures and multilayer semimetal/semiconductor structures. Each semimetal/semiconductor layer fabricated in accordance with the present invention has compatible crystal symmetry across the heterojunction between a semimetal and a semiconductor. A single layer semimetal/semiconductor structure is fabricated by growing a rhombohedral semimetal in a [111] direction on a substrate material having a (111) orientation, and then growing a zincblende semiconductor in a [111] direction on the semimetal. A multilayer semimetal/semiconductor structure may be grown from the single layer semimetal/semiconductor structure by growing an additional rhombohedral semimetal layer in a [111] direction on the preceding semiconductor grown, then growing an additional zincblende semiconductor layer in a [111] direction on the additional semimetal layer, and then repeating this process as many times as desired. Each semimetal to be sandwiched between semiconductors in the multilayer semimetal/semiconductor structure may be grown thin enough that the semimetal is converted into a semiconductor.

4157096, Jun 5, 1979

Jun 19, 1978

5/916684

John A. Miller - Houston TX

AMF Incorporated - White Plains NY

B08B 302, B08B 902

134111

Apparatus for cleaning pipe ends having a closed system, for recycling cleaning fluid by removing contaminants, which includes independently positionable pin end and box end wash heads each of which can be used alone or simultaneously with the other; each wash head providing a high pressure spray of cleaning fluid impinging on the exposed threads of the pipe end being washed within a sealed wash chamber formed by the wash head.