Inventors:
Timothy Henderson - Portland OR, US
Jeremy Middleton - Beaverton OR, US
John Hitt - Plano TX, US
Assignee:
TRIQUINT SEMICONDUCTOR, INC. - Hillsboro OR
International Classification:
H01L 29/737, H01L 21/331
US Classification:
257198, 438317, 257E21371, 257E29188
Abstract:
A heterojunction bipolar transistor (HBT) device and system having electrostatic discharge ruggedness, and methods for making the same, are disclosed. An HBT device having electrostatic discharge ruggedness may include one or more emitter fingers including an emitter layer, a transition layer formed over the emitter layer, and an emitter cap layer formed over the transition layer.