JOHN C ARNOLD
Engineering in Chatham Center, NY
License number
Massachusetts 37757
Issued Date
Mar 9, 1994
Expiration Date
Jun 30, 2018
Type
Chemical Engineer
Address
Address
2
Chatham Center, NY 12184
Chatham Center, NY
Chatham Center, NY
Personal information
See more information about JOHN C ARNOLD at radaris.comName
Address
Phone
500 Pulteney St APT 25, Geneva, NY 14456
51 Grove Rd W, Mastic Beach, NY 11951
478 Burroughs Rd, Schenevus, NY 12155
482 S Cascade Dr, Springville, NY 14141
Professional information
See more information about JOHN C ARNOLD at trustoria.com
Sidewall Image Transfer Process Employing A Cap Material Layer For A Metal Nitride Layer
Sidewall Image Transfer Process Employing A Cap Material Layer For A Metal Nitride Layer
US Patent:
8298954, Oct 30, 2012
Filed:
May 6, 2011
Appl. No.:
13/102224
Inventors:
John C. Arnold - Valatie NY, US
Sean D. Burns - Hopewell Junction NY, US
Matthew E. Colburn - Schenectady NY, US
David V. Horak - Essex Junction VT, US
Yunpeng Yin - Guilderland NY, US
Sean D. Burns - Hopewell Junction NY, US
Matthew E. Colburn - Schenectady NY, US
David V. Horak - Essex Junction VT, US
Yunpeng Yin - Guilderland NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/311, H01L 21/302
US Classification:
438703, 438737, 438738, 257E21235, 257E21305
Abstract:
A cap material layer is deposited on a metal nitride layer. An antireflective coating (ARC) layer, an organic planarizing layer (OPL), and patterned line structures are formed upon the cap material layer. The pattern in the patterned line structures is transferred into the ARC layer and the OPL. Exposed portions of the cap material layer are etched simultaneously with the etch removal of the patterned line structures and the ARC layer. The OPL is employed to etch the metal nitride layer. The patterned cap material layer located over the metal nitride layer protects the top surface of the metal nitride layer, and enables high fidelity reproduction of the pattern in the metal nitride layer without pattern distortion. The metal nitride layer is subsequently employed as an etch mask for pattern transfer into an underlying layer.