JOHN BRENNAN, MD
Medical Practice at 12 St, Weissport, PA

7214568, May 8, 2007

Feb 6, 2004

10/773614

John M. Brennan - Wyomissing PA, US
Joseph Michael Freund - Fogelsville PA, US
Sujal Dipak Shah - Fogelsville PA, US

Agere Systems Inc. - Allentown PA

H01L 21/00

438113, 257E21705

A semiconductor device includes an IC die configured to reduce post-fabrication damage to the device. The IC die is formed such that at least a portion of one or more perimeter edges of the die are beveled by an etching process. The semiconductor device may include a plurality of IC dies, at least one of the IC dies being separated from the semiconductor device by forming one or more v-shaped grooves in an upper surface of the device, the v-shaped grooves defining perimeter edges of the at least one IC die. A back surface of the semiconductor device is removed until at least a portion of the v-shaped grooves are exposed. When the IC die is separated from the semiconductor device in this manner, a sidewall of each of the v-shaped grooves forms a beveled perimeter edge of the separated IC die.

7443042, Oct 28, 2008

Mar 21, 2006

11/385245

Timothy Brooks Bambridge - Pittstown NJ, US
John Wayne Bowen - Warminster PA, US
John McKenna Brennan - Wyomissing PA, US
Joseph Michael Freund - Fogelsville PA, US

Agere Systems Inc. - Allentown PA

H01L 23/48, H01L 23/52

257784, 257723, 257724

An integrated circuit is wire bonded in a manner such that there is consistent RF performance from integrated circuit package to integrated circuit package. Bond distances within the integrated circuit are measured, each corresponding to a wire bond to be formed. An area under a hypothetical wire bond profile is calculated as a function of the bond distances, a baseline wire length, and a baseline loop height. A wire is bonded across a given one of the bond distances to form a given one of the wire bonds. A wire bond profile for the given wire bond is provided having an area thereunder that is substantially equal to the calculated area.

7075174, Jul 11, 2006

Feb 26, 2004

10/788162

John McKenna Brennan - Wyomissing PA, US
Joseph Michael Freund - Fogelsville PA, US
Curtis James Miller - West Lawn PA, US

Agere Systems Inc. - Allentown PA

H01L 23/495

257675, 257712, 257E23031, 257E23051, 257E23052

A method for attaching at least one IC die to a non-ceramic IC package including a leadframe and a base, the IC package being configured for receiving the at least one IC die, includes attaching the IC die to an upper surface of a thermal carrier in a manner which facilitates thermal transfer between the die and the carrier. The method further includes attaching the thermal carrier having the IC die attached thereto to an upper surface of the base of the IC package. In this manner, one or more IC dies may be attached to a standard plastic IC package without a significant impact on thermal transfer in the device and at a significant cost savings compared to ceramic IC packages.

7109589, Sep 19, 2006

Aug 26, 2004

10/926631

John M. Brennan - Wyomissing PA, US
Donald Farrell - Allentown PA, US
Joseph Michael Freund - Fogelsville PA, US

Agere Systems Inc. - Allentown PA

H01L 23/52, H01L 23/48, H01L 29/40

257784, 257531, 257779, 257780, 257781, 257786, 361704, 361707, 2281805

An integrated circuit comprises an integrated circuit package and a plurality of circuit elements disposed within the integrated circuit package. A plurality of wire bonds provide connections for at least one of the circuit elements. At least one wire bond in a first subset of wire bonds and at least one wire bond in a second subset of wire bonds are substantially perpendicular to one another at a crossing point of the wire bonds in a plan view of the integrated circuit.

7086148, Aug 8, 2006

Feb 25, 2004

10/787010

Timothy Brooks Bambridge - Pittstown NJ, US
John Wayne Bowen - Warminster PA, US
John McKenna Brennan - Wyomissing PA, US
Joseph Michael Freund - Fogelsville PA, US

Agere Systems Inc. - Allentown PA

H05K 3/00

29843, 29842, 29850, 228 45, 228179, 2281805

An integrated circuit is wire bonded in a manner such that there is consistent RF performance from integrated circuit package to integrated circuit package. Bond distances within the integrated circuit are measured, each corresponding to a wire bond to be formed. An area under a hypothetical wire bond profile is calculated as a function of the bond distances, a baseline wire length, and a baseline loop height. A wire is bonded across a given one of the bond distances to form a given one of the wire bonds. A wire bond profile for the given wire bond is provided having an area thereunder that is substantially equal to the calculated area.

7465655, Dec 16, 2008

Jul 27, 2006

11/494221

John M. Brennan - Wyomissing PA, US
Donald Farrell - Allentown PA, US
Joseph Michael Freund - Fogelsville PA, US

Agere Systems Inc. - Allentown PA

H01L 21/44, B23K 37/00

438617, 257E21506, 228 45

A method for performing a wire-bonding operation in an integrated circuit utilizes a bonding tool. A wire is bonded to a first bond site in the integrated circuit, and terminated at a second bond site in the integrated circuit. The bonding and terminating steps are repeated for a plurality of additional wire bonds of the integrated circuit. At least two wire bonds in the integrated circuit are substantially perpendicular to one another at a crossing point in a plan view of the integrated circuit.

7637414, Dec 29, 2009

Jul 11, 2008

12/171903

Timothy Brooks Bambridge - Pittstown NJ, US
John Wayne Bowen - Warminster PA, US
John McKenna Brennan - Wyomissing PA, US
Joseph Michael Freund - Fogelsville PA, US

Agere Systems Inc. - Allentown PA

B23K 31/00

2281805, 228 45, 228103

An integrated circuit is wire bonded in a manner such that there is consistent RF performance from integrated circuit package to integrated circuit package. Bond distances within the integrated circuit are measured, each corresponding to a wire bond to be formed. An area under a hypothetical wire bond profile is calculated as a function of the bond distances, a baseline wire length, and a baseline loop height. A wire is bonded across a given one of the bond distances to form a given one of the wire bonds. A wire bond profile for the given wire bond is provided having an area thereunder that is substantially equal to the calculated area.

7164200, Jan 16, 2007

Feb 27, 2004

10/788678

John McKenna Brennan - Wyomissing PA, US
Joseph Michael Freund - Fogelsville PA, US
John William Osenbach - Kutztown PA, US

Agere Systems Inc. - Allentown PA

H01L 23/10, H01L 23/34

257707, 257728

Power transistor devices and techniques for reducing bowing in such devices are provided. In one aspect, a power transistor device is provided. The power transistor device comprises a substrate, a device film formed on the substrate and an adhesion layer formed on a side of the substrate opposite the device film, wherein at least a portion of the adhesion layer is at least partially segmented. The power transistor device thereby exhibits a reduced amount of bowing relative to an amount of bowing expected without the segmenting of the adhesion layer. The power transistor device may be part of an integrated circuit.

2005018, Aug 25, 2005

Feb 23, 2004

10/784756

John Brennan - Wyomissing PA, US
Joseph Freund - Fogelsville PA, US
Sujal Shah - Fogelsville PA, US
Richard Shanaman - Richland PA, US

H01L023/10

257706000

A semiconductor device includes a substrate and an active region formed in the substrate proximate an upper surface of the substrate. The active region includes at least one circuit element formed therein. At least one channel is formed in a back surface of the substrate opposite the upper surface of the substrate, the channel being formed proximate the active region. The channel is substantially filled with one or more layers of a thermally conductive material and configured so as to provide a thermal conduction path for conducting heat away from the active region.