John Bailey Jones
Engineering at Chapel Hl Blvd, Plano, TX

6685073, Feb 3, 2004

Nov 20, 1997

08/975029

Robert G. McKenna - Houston TX
David Durin - Rowlett TX
Don Brown - Bedford TX
Cecil Davis - Greenville TX
John Jones - Plano TX

Texas Instruments Incorporated - Dallas TX

H01L 21461

225 2, 225 955, 438464, 83171

A method and apparatus for separating a wafer into wafer portions comprising a larger wafer flex-frame ( ) supported on a support base ( ) and a smaller flex-frame ( ) positioned within the support base ( ). A wafer film transfer cylinder ( ) encompasses a wafer breaking device ( ), such as a convex dome. The transfer cylinder ( ) is slidable downwardly with respect to the dome ( ) to first stretch the wafer tape ( ) and then transfer the wafer ( ) from the larger frame ( ) to the smaller frame ( ) after dome ( ) breaks the wafer ( ) into die. The transfer cylinder ( ) is heated to facilitate removing the saw tape ( ) from the larger frame ( ) after transfer to the smaller frame ( ). The transfer cylinder ( ) is juxtaposed with the smaller frame ( ) residing within a cavity ( ) of the support base ( ). The present invention is suited for automated wafer transfer carriers which advance the broken wafer to pick and place equipment for packaging of the die.

4891087, Jan 2, 1990

Jun 25, 1987

7/067055

Cecil J. Davis - Greenville TX
John E. Spencer - Plano TX
Thomas D. Bonifield - Dallas TX
Rhett B. Jucha - Celeste TX
William J. Stiltz - Anna TX
Randall E. Johnson - Carrollton TX
Joseph E. Whetsel - Richardson TX
John I. Jones - Plano TX

Texas Instruments Incorporated - Dallas TX

C23C 1600

156345

A radio frequency (RF) glow discharge plasma etch electrode design is disclosed which is capable of creating high power density plasma with uniform etch rates, while providing access for automatic loading semiconductor wafers from outside of the plasma region. The electrode assembly comprises of an electrode to which RF energy is applied surrounded by an insulator, which in turn surrounded a grounded surface all of which have cylindrical symmetry. When placed a small distance from a flat, grounded substrate, the electrode assembly creates a volume which can effectively combine a high power density plasma, while maintaining a sufficient channel for pumping a gas flow and for observing the plasma optically. The same channel is widened for automatic transport of semiconductor wafers from outside of the plasma reactor chamber. Such confined high power density plasma are important for high rate, uniform, anisotropic etching, especially for silicon dioxide.

4822450, Apr 18, 1989

May 18, 1988

7/198632

Cecil J. Davis - Greenville TX
Lee M. Loewenstein - Plano TX
Rhett B. Jucha - Celeste TX
Robert T. Matthews - Plano TX
Randall C. Hildenbrand - Richardson TX
Dean W. Freeman - Garland TX
John I. Jones - Plano TX

Texas Instruments Incorporated - Dallas TX

B44C 122, H01L 21306, C03C 1500, C03C 2506

156643

A processing apparatus and method compatible with a vacuum process system for wafers, wherein an in situ source of ultraviolet light is provided to enhance chemical activity at the wafer surface, and a remote plasma source is provided in the process gas flow upstream of the wafer, to provide activated species to the wafer face, and a radiatively coupled heat source is also provided so that the wafer can be rapidly thermally cycled.

4657618, Apr 14, 1987

Oct 22, 1984

6/663804

John E. Spencer - Plano TX
Randall E. Johnson - Carrollton TX
Dan T. Hockersmith - Garland TX
Randall C. Hildenbrand - Richardson TX
John I. Jones - Plano TX
William S. Jaspersen - Dallas TX

Texas Instruments Incorporated - Dallas TX

H01L 21306, B44C 122, C03C 1500, C23F 102

156345

An electrode and substrate assembly for a plasma reactor allows high power plasma processing with low frequency excitation. The electrode sub-assembly is contained in a chamber which is used for pre-treatment such as de-scumming photoresist or for post-etch resist stripping and passivation. A post-etch treatment is essential in plasma aluminum etching.

4836905, Jun 6, 1989

Jul 16, 1987

7/075018

Cecil J. Davis - Greenville TX
Joseph V. Abernathy - Wylie TX
Robert T. Matthews - Plano TX
Randall C. Hildenbrand - Richardson TX
Bruce Simpson - Dallas TX
James G. Bohlman - Forney TX
Lee M. Loewenstein - Plano TX
John I. Jones - Plano TX

Texas Instruments Incorporated - Dallas TX

C23C 1334

204298

A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely transferred and processed in the face down position. This includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. While the wafer is in the more nearly vertical position, sputter deposition may be performed. In situ or remote plasma capability is usefully provided in the bottom part of the chamber, so that a dry deglaze or cleanup step can be performed while the wafer is in its substantially horizontal position, followed by a sputter deposition after the wafer has been moved to its more nearly vertical position.

4886570, Dec 12, 1989

Dec 2, 1988

7/282993

Cecil J. Davis - Greenville TX
Robert T. Matthews - Plano TX
Lee M. Loewenstein - Plano TX
Rhett B. Jucha - Celeste TX
Randall C. Hildenbrand - Richardson TX
John I. Jones - Plano TX

Texas Instruments Incorporated - Dallas TX

B44C 122, C03C 1500, B05D 306, C23C 1400

156643

A process module having remote plasma and in situ plasma generators, a source of ultraviolet, and a radiant heater, which represent four separate energy sources. The four sources can be used singly or in any combination and can be separately controllable.