JOEL SAMUEL UTZ
Pilots at Abilene Trl, Austin, TX

5746884, May 5, 1998

Aug 13, 1996

8/696774

Subhash Gupta - Saratoga CA
Robert Flores - Austin TX
Michael Ross Stamm - Austin TX
Eric Thomas Sharp - Austin TX
Erich W. E. Denninger - Buda TX
Pamela G. Dye - Austin TX
Joel Samuel Utz - Austin TX
James K. Kai - San Francisco CA

Advanced Micro Devices, Inc. - Sunnyvale CA

H01L 2100

1566431

A method of forming a via in a interlevel dielectric of a semiconductor device wherein the via has a fluted sidewall. A semiconductor substrate is provided having a first conductive layer formed thereon. A dielectric layer is then formed on the first conductive layer. A photoresist layer is deposited on a dielectric layer and a contact opening is formed in the photoresist layer to expose a contact region of the dielectric layer. A first etch step is performed to remove portions of the dielectric layer proximal to the contact region to form a first stage of the fluted via. The first stage includes a first sidewall stage extending from an upper surface of the dielectric layer at an angle less than 50. degree. The first stage of the fluted via extends a first lateral distance which is greater than a lateral dimension of the contact opening. A second etch step is then performed to further remove portions of the dielectric layer to form a second stage of the fluted via.

5841196, Nov 24, 1998

Nov 14, 1997

8/970314

Subhash Gupta - Saratoga CA
Robert Flores - Austin TX
Michael Ross Stamm - Austin TX
Eric Thomas Sharp - Austin TX
Erich W. E. Denninger - Buda TX
Pamela G. Dye - Austin TX
Joel Samuel Utz - Austin TX
James K. Kai - San Francisco CA

Advanced Micro Devices, Inc.

H01L 2100

257774

A method of forming a via in a interlevel dielectric of a semiconductor device wherein the via has a fluted sidewall. A semiconductor substrate is provided having a first conductive layer formed thereon. A dielectric layer is then formed on the first conductive layer. A photoresist layer is deposited on a dielectric layer and a contact opening is formed in the photoresist layer to expose a contact region of the dielectric layer. A first etch step is performed to remove portions of the dielectric layer proximal to the contact region to form a first stage of the fluted via. The first stage includes a first sidewall stage extending from an upper surface of the dielectric layer at an angle less than 50. degree. The first stage of the fluted via exterds a first lateral distance which is greater than a lateral dimension of the contact opening. A second etch step is then performed to further remove portions of the dielectric layer to form a second stage of the fluted via.

2004015, Aug 12, 2004

Aug 1, 2003

10/633089

Katherine Utz - Austin TX, US
Joel Utz - Austin TX, US

B25B027/14

030/367000

An automatic optical center punch adapted to perform with high accuracy and ease of use is disclosed. The punch includes a spring-loaded hammer and a rotational latch mechanism. The rotational latch mechanism restrains the movement of the hammer to allow the spring to be compressed when pressure is initially applied to the punch by its operator. When the spring is fully compressed, the latch mechanism engages a cam surface, which causes the latch to rotate to release the hammer. The spring-loaded hammer makes contact with a punch head assembly, which causes perforation of the work surface to take place. Once the hammer has been extended by the spring, the latch engages a second cam surface, which causes the latch to rotate in the opposite direction to restrain the hammer in preparation for the next compression of the spring.